SD05C

SD05C SAMYANG | Alldatasheet

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Technical content

s c i t s i r e t c a r a h C l a c i n a h c e Ms e r u t a e F 1-Line Normal Capacitance Bi-Directional Package: SOD-323 (1.3×2.5×1mm) Ultra low leakage Lead Finish: Matte Tin Low operating voltage Case Material: “Green” Molding Compound. Low clamping voltage UL Flammability Classification Rating 94V-0 Silicon technology Moisture Sensitivity: Level 3 per J-STD-020 Epoxy resin package Complies with following standards: Applications – IEC 61000-4-2 (ESD) immunity test Mobile Set Air discharge: ±30KV Cellular Handsets and Accessories Contact discharge: ±30KV Personal Digital Assistants – IEC61000-4-4 (EFT) 40A (5/50ns) Notebooks and Handhelds – IEC61000-4-5 (Lightning) 24A (8/20us) Portable Instrumentation RoHS Compliant Desktop and Servers n o i t a r u g i f n o C n i Pn o i t a m r o f n I g n i k r a M 05 = Marking Code Summary of Packing Options SOD-323 8mm tape/7" reel 3000PCS/Reel EIA-481-1

Description

SD05C is 1-Line Normal Capacitance Bi-Directional ElectroStatic Discharge Protection Device, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltagesensitive data lines. SD05C complies with the IEC 61000-4-2 (ESD) standard with±30KV air and ± 30KV contact discharge.It is assembled into a 1.3×2.5×1mm lead-free package.SD05C is an ideal choice to protect Mobile Set,Cellular Handsets and Accessories,Personal Digital Assistants,Notebooks and Handhelds,Portable Instrumentation,Desktop and Servers,etc. H Package Packing Description Packing Quantity Industry Standard SAM YANG SAMYANG ELECTRONICS SDO5C ESD PROTECTION ■ ■ www.diode.co.kr All d ata sheet.com

VDC=0V f = 1MHzJunction Capacitance CJ 65 80 pF IPP=5A 8/20us pulse Maximum Clamping Voltage (8/20µs) VCM 15 V IPK=24A 8/20us pulse Clamping Voltage (8/20 µs) V C 10 V VRWM=5VReverse Leakage Current IR 0.1 uA Conditions Remarks Breakdown Voltage VBR A m 1 = R B I V86 Storage Temperature Range TSTG -55 to 150 ℃ Parameter Symbol Min Typ Max Units ESD per IEC 61000−4−2 (Contact) VESD-Contact 30 KV Operating Temperature Range TJ -55 to 125 ℃ Peak Pulse Current (8/20µs) IPK 24 A ESD per IEC 61000−4−2 (Air) VESD-Air 30 KV Peak Pulse Power (8/20µs) PPK 350 W Parameter Symbol Value Units Reverse Working Voltage VRWM 5 V www.diode.co.kr SAM YANG SAMYANG ELECTRONICS SDO5C All d ata sheet.com

Rating And Characteristic Curves (TA=25°C unless otherwise noted) Fig.5 - Clamping Voltage e v r u C g n i t a r e D e s l u P - 2 . g i Fg n i t a R r e w o P e s l u P k a e P - 1 . g i F . g i Fm r o f e v a W e s l u P s u 0 2 / 8 - 3 . g i F4 - Typical Junction Capacitance 0.1 100 1000 1 10 100 1000 PPK - Peak Pulse Power (W) td - Pulse Width (us) 100 120 0 25 50 75 100 125 150 175 Peak Pulse Power (PPK) or Current (IPK) Derating in Percentage % TA - Ambient Temperature (℃) 100 0 20 40 60 80 IPP - Peak Pulse Current, % IPK t - Time (us) 100 0123 4 5 CJ - Junction Capacitance(pF) VR - Reverse Voltage (V) Tj=25C f=1.0MHz Vsig=100mVRMS 0 5 10 15 20 25 30 VC - Clamping Voltage (V) IPP - Peak Pulse Current (A) SAM YANG SAMYANG ELECTRONICS SDO5C www.diode.co.kr All d ata sheet.com

5 5 . 11 6 0 . 0Z 8 . 01 3 0 . 0Y 8 . 01 3 0 . 0X 0.1 G - 0.004 - 1.8 F 0.004 0.01 0.1 0.25 D 0.059 0.071 1.5 2.7 C 0.012 0.016 0.3 0.4 SOD-323 Dimension s r e t e m i l l i Ms e h c n I MIN NOM MAX MIN NOM MAX B D A C F H G Y X Z TOP VIEW RIGHT VIEW SIDE VIEW SOLDERING PAD www.diode.co.kr SAM YANG SAMYANG ELECTRONICS SDO5C All d ata sheet.com

. x a M s e t u n i m 8) t ( e r u t a r e p m e T k a e p o t C ° 5 2 e m i T C ° 0 6 2d e e c x e t o n o D Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 secs x a m d n o c e s / C ° 6e t a R n w o d - p m a R Average ramp up rate (Liquidus Temp (TL) to peak) 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Time (tL) 60 – 150 secs y l b m e s s a e e r f - d a e Ln o i t i d n o C w o l f e R Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Time (t) Ts(min) Ts(max) TL TP Preheat tL tp Ramp-up Critical Zone TL to TP Ramp-down t 25℃ to Peak 25℃ Temperature (T) ts SAM YANG SAMYANG ELECTRONICS SDO5C www.diode.co.kr All d ata sheet.com