SD05C BILIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Single Line TVS Diode for ESD S D 0 5 C - 2 4 C B027 www.gmicroelec.com R e v . A 1
FEATURES
z 350 Watts peak pulse power (tp=8/20 μs) z Protects one I/O or power line z Low clamping voltage z Working voltage:5V ，12V，15V，24V z Low leakage current z Solid-state silicon avalanche technology SOD-323
APPLICATIONS
z Cell Phone Handsets and Accessories z Microprocessor based equipment z Portable Instrumentation
ORDERING INFORMATION
T y p e N o . M a r k i n g P a c k a g e C o d e S D 0 5 C 0 5 C S O D - 3 2 3 S D 1 2 C 6 / 6 S O D - 3 2 3 S D 1 5 C 7 / 7 S O D - 3 2 3 S D 2 4 C 8 / 8 S O D - 3 2 3 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak pulse power(tp=8/20μs) P pk 350 W Peak pulse current(tp=8/20μs) I PP 24 A ESD voltage(HBM waveform per IEC 6100-4-2) V PP 30 kV Lead soldering temperature T L 260 (10 sec.) ℃ Operating temperature T j -55 to+125 ℃ Storage temperature T STG -55 to+150 ℃ Pb Lead-free
Single Line TVS Diode for ESD S D 0 5 C - 2 4 C B027 www.gmicroelec.com R e v . A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified SD05C TVS for 5V Lines Parameter Symbol Min. Typ. Max. Unit Conditions Reverse stand-off voltage VRWM 5 V Reverse breakdown voltage V(BR)R 6 V I R=1mA Clamping voltage VC 9.8 14.5 V IPP=5A,tp=8/20μs IPP=24A,tp=8/20μs Reverse leakage current IR 1 0 μA V RWM=5V Junction Capacitance CJ 200 pF V R=0V,f=1MHz SD12C TVS for 12V Lines Parameter Symbol Min. Typ. Max. Unit Conditions Reverse stand-off voltage VRWM 1 2 V Reverse breakdown voltage V(BR)R 13.3 V I R=1mA Clamping voltage VC V IPP=5A,tp=8/20μs IPP=15A,tp=8/20μs Reverse leakage current IR 1 μA V RWM=12V Junction Capacitance CJ 100 pF V R=0V,f=1MHz
Single Line TVS Diode for ESD S D 0 5 C - 2 4 C B027 www.gmicroelec.com R e v . A 3 SD15C TVS for 15V Lines Parameter Symbol Min. Typ. Max. Unit Conditions Reverse stand-off voltage VRWM 1 5 V Reverse breakdown voltage V(BR)R 16.7 V I R=1mA Clamping voltage VC V IPP=5A,tp=8/20μs IPP=12A,tp=8/20μs Reverse leakage current IR 1 μA V RWM=15V Junction Capacitance CJ 75 pF V R=0V,f=1MHz SD24C TVS for 24V Lines Parameter Symbol Min. Typ. Max. Unit Conditions Reverse stand-off voltage VRWM 2 4 V Reverse breakdown voltage V(BR)R 26.7 V I R=1mA Clamping voltage VC V IPP=5A,tp=8/20μs IPP=8A,tp=8/20μs Reverse leakage current IR 1 μA V RWM=24V Junction Capacitance CJ 50 pF V R=0V,f=1MHz
Single Line TVS Diode for ESD S D 0 5 C - 2 4 C B027 www.gmicroelec.com R e v . A 4 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Single Line TVS Diode for ESD S D 0 5 C - 2 4 C B027 www.gmicroelec.com R e v . A 5 PACKAGE OUTLINE Plastic surface mounted package SOD-323 SOLDERING FOOTPRINT Unit ：mm
PACKAGE INFORMATION
A 1.60 1.80 B 1.20 1.40 C 0.9 Max D 0.30 Typical E 0.22 0.42 H 0.02 0.1 J 0.1 Typical K 2.55 2.75 All Dimensions in mm Device Package Shipping SD05C-SD24C SOD-323 3000/Tape&Reel 1.60 0.63 0.83 2.85 D A K C B H J E