SD05 SAMYANG | Alldatasheet

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Technical content

s c i t s i r e t c a r a h C l a c i n a h c e Ms e r u t a e F 1-Line Normal Capacitance Uni-Directional Package: SOD-323 (1.3×2.5×1mm) Ultra low leakage Lead Finish: Matte Tin Low operating voltage Case Material: “Green” Molding Compound. Low clamping voltage UL Flammability Classification Rating 94V-0 Silicon technology Moisture Sensitivity: Level 3 per J-STD-020 Epoxy resin package Complies with following standards: Applications – IEC 61000-4-2 (ESD) immunity test Audio Players Air discharge: ±30KV Cellular Handsets and Accessories Contact discharge: ±30KV Digital Cameras – IEC61000-4-4 (EFT) 40A (5/50ns) Personal Digital Assistants – IEC61000-4-5 (Lightning) 24A (8/20us) Notebooks and Handhelds RoHS Compliant Portable Instrumentation n o i t a r u g i f n o C n i Pn o i t a m r o f n I g n i k r a M 5U = Marking Code Summary of Packing Options 5ZA SOD-323 8mm tape/7" reel 3000PCS/Reel EIA-481-1

Description

SD05 is 1-Line Normal Capacitance Uni-Directional ElectroStatic Discharge Protection Device, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltagesensitive data lines. SD05 complies with the IEC 61000-4-2 (ESD) standard with±30KV air and ± 30KV contact discharge.It is assembled into a 1.3×2.5×1mm lead-free package.SD05 is an ideal choice to protect Audio Players,Cellular Handsets and Accessories,Digital Cameras,Personal Digital Assistants,Notebooks and Handhelds,Portable Instrumentation,etc. Package Packing Description Packing Quantity Industry Standard SAM YANG SAMYANG ELECTRONICS SDO5 www.diode.co.kr ESD PROTECTION ■ ■ All d ata sheet.com

IPK=24A 8/20us pulse Junction Capacitance CJ 100 130 pF VDC=0V f = 1MHz Maximum Clamping Voltage (8/20µs) VCM 13.5 V Clamping Voltage (8/20 µs) V C 9.8 V IPP=5A 8/20us pulse Reverse Leakage Current IR 0.5 uA Forward Voltage VF 0.8 1.2 V IF=10mA Breakdown Voltage VBR A m 1 = R B I V6 VRWM=5V Storage Temperature Range TSTG -55 to 150 ℃ Parameter Symbol Min Typ Max Units Conditions Remarks ESD per IEC 61000−4−2 (Contact) VESD-Contact 30 KV Operating Temperature Range TJ -55 to 125 ℃ Peak Pulse Current (8/20µs) IPK 24 A ESD per IEC 61000−4−2 (Air) VESD-Air 30 KV Peak Pulse Power (8/20µs) PPK 350 W Parameter Symbol Value Units Reverse Working Voltage VRWM 5 V SAM YANG SAMYANG ELECTRONICS SDO5 www.diode.co.kr All d ata sheet.com

Rating And Characteristic Curves (TA=25°C unless otherwise noted) e v r u C g n i t a r e D e s l u P - 2 . g i Fg n i t a R r e w o P e s l u P k a e P - 1 . g i F . g i Fm r o f e v a W e s l u P s u 0 2 / 8 - 3 . g i F4 - Typical Junction Capacitance Fig.5 - Clamping Voltage 0.1 100 1000 1 10 100 1000 PPK - Peak Pulse Power (W) td - Pulse Width (us) 100 120 0 25 50 75 100 125 150 175 Peak Pulse Power (PPK) or Current (IPK) Derating in Percentage % TA - Ambient Temperature (℃) 100 0 20 40 60 80 IPP - Peak Pulse Current, % IPK t - Time (us) 100 120 140 160 180 200 0123 4 5 CJ - Junction Capacitance(pF) VR - Reverse Voltage (V) Tj=25C f=1.0MHz Vsig=100mVRMS 0 5 10 15 20 25 30 VC - Clamping Voltage (V) IPP - Peak Pulse Current (A) www.diode.co.kr SAM YANG SAMYANG ELECTRONICS SDO5 All d ata sheet.com

5 5 . 11 6 0 . 0Z 8 . 01 3 0 . 0Y 1.1 8 . 01 3 0 . 0X H 0.035 0.039 0.043 0.9 1 0.25 1 . 0- 4 0 0 . 0-G F 0.004 0.01 0.1 0.4 D 0.059 0.071 1.5 1.8 C 0.012 0.016 0.3 1.4 SOD-323 Dimension s r e t e m i l l i Ms e h c n I MIN NOM MAX MIN NOM MAX B D A C F H G Y X Z TOP VIEW RIGHT VIEW SIDE VIEW SOLDERING PAD SAM YANG SAMYANG ELECTRONICS SDO5 www.diode.co.kr All d ata sheet.com

. x a M s e t u n i m 8) t ( e r u t a r e p m e T k a e p o t C ° 5 2 e m i T C ° 0 6 2d e e c x e t o n o D Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 secs x a m d n o c e s / C ° 6e t a R n w o d - p m a R Average ramp up rate (Liquidus Temp (TL) to peak) 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Time (tL) 60 – 150 secs y l b m e s s a e e r f - d a e Ln o i t i d n o C w o l f e R Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Time (t) Ts(min) Ts(max) TL TP Preheat tL tp Ramp-up Critical Zone TL to TP Ramp-down t 25℃ to Peak 25℃ Temperature (T) ts www.diode.co.kr SAM YANG SAMYANG ELECTRONICS SDO5 All d ata sheet.com