SD05 DGNJDZ | Alldatasheet
Document overview
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Technical content
Features
z Unidirectional Configurations z Peak Power Dissipation 250W @8 x 20 us Pulse z Low Leakage z Fast Response Time < 1 ns z Protects One Power or I/O Port z ESD Protection to IEC 61000-4-2 Level 4,15KV(Air), 8KV(Contanct) z ESD Protection to IEC 61000-4-2 Level 4, 30A z 16KV Human Body Model ESD Requirements z RoHS Compliant in Lead-Free Versions
Applications
z Cell Phone Handsets and Accessories z Microprocessor Based Equiment z Personal Digital Assistant (PDA) z Notebooks, Destops, and Servers z Portable Instrumentation z Pagers Periherals Absolute Maximum Ratings Parameter Symbol Value Units Peak Power Dissipation (Note 1.) @T L = 25°C P PK 250 W IEC 61000-4-2 (ESD) Air C O N T A C T ±15 ±8.0 KV KV IEC 61000-4-4 (EFT) 30 A ESD Voltage Per Human Body Model V PP 16 KV Storage Temperature Range T STG -55 to 150 °C Operating Junction Temperature Range T J -55 to 150 °C
8 X 20 us, non–repetitive
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. Symbol Parameter Maximum Reverse Peak Pulse Current I PP V C Clamping Voltage @ I PP V RWM Working Peak Reverse Voltage I R Maximum Reverse Leakage Current @ V RWM I T Test Current V BR Breakdown Voltage @ I T I F Forward Current V F Forward Voltage @ I F Ratings at 25°C ambient temperature unless otherwise specified. V RWM (V) I R (uA) @ V RWM V BR (V)@ I T (Note 1) I T V C (V) @ I PP =5 A* V C (V) @ Max I PP I PP (A)* C@OV 1MHz (pF) Device Max Max Min Max mA Typ Max Max Typ SD12 12 1.0 13.3 15.75 1.0 19 25 12 150 *Surge current waveform per Figure 1. 1. V BR is measured with a pluse test current I T at an ambient temperature of 25℃． Fig1. Pulse Waveform Fig2. Power Derating
Fig3. Clamping Voltage Fig4. Forward Voltage vs. Peak Pulse Curre nt vs.Forward Current Fig5.Capacitance vs. Revere Voltage
Dim MIN NOM MAX MIN NOM MAX A3 0.15 REF 0.006 REF L 0.08 0.003 H E