SD040SC100A SENSITRON | Alldatasheet

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  • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
  • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 516, REV. A SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop 200°C Operating Temperature Applications:
  • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:
  • Soft Reverse Recovery at Low and High Temperature
  • Very Low Forward Voltage Drop
  • Low Power Loss, High Efficiency
  • High Surge Capacity
  • Guard Ring for Enhanced Durability and Long Term Reliability
  • Guaranteed Reverse Avalanche Characteristics
  • Electrically / Mechanically Stable during and after Packaging
  • Out Performs 100 Volt Ultrafast Rectifiers Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage V RWM - 100 V Max. Average Forward Current I F(AV) 50% duty cycle, rectangular wave form 1 A Max. Peak One Cycle Non- Repetitive Surge Current IFSM 8.3 ms, half Sine wave (1) 20 A Non-Repetitive Avalanche Energy EAS TJ = 25 °C, IAS = 0.13 A, L = 227mH 2.0 mJ Repetitive Avalanche Current I AR IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5VR 0.13 A Max. Junction Temperature T J - -65 to +200 °C Max. Storage Temperature T stg - -65 to +200 °C Electrical Characteristics: Characteristics Symbol Condition Max. Units Max. Forward Voltage Drop V F1 @ 1A, Pulse, TJ = 25 °C 0.84 V V F2 @ 1A, Pulse, TJ = 125 °C 0.68 V Max. Reverse Current I R1 @V R = 100V, Pulse, TJ = 25 °C 30 µA I R2 @V R = 100V, Pulse, TJ = 125 °C 0.6 mA Max. Junction Capacitance C T @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) 35 pF (1) in SHD package SD040SC100A/B
  • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
  • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON TECHNICAL DATA DATA SHEET 516, REV. A Forward Voltage Drop - V F (V) 10-4 10-3 10-2 10-1 100 Instantaneous Forward Current - IF (A) Typical Forward Characteristics TJ = 125 °C TJ = 200 °C TJ = 175 °C TJ = 25 °C 0 20 40 60 80 100 120 Reverse Voltage - VR (V) 10-6 10-5 10-4 10-3 10-2 10-1 100 Instantaneous Reverse Current - IR (mA) Typical Reverse Characteristics 25 °C 50 °C 75 °C 100 °C 125 °C 150 °C 200°C 175 °C 0 2 04 06 08 0 1 0 0 1 2 0 Reverse Voltage - VR (V) Junction Capacitance - CT (pF) Typical Junction Capacitance SD040SC100A/B
  • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
  • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON TECHNICAL DATA DATA SHEET 516, REV. A Mechanical Dimensions: In Inches / mm SD040SC100A/B DISCLAIMER: 1- The information given herein, including the specifications and dimens ions, is subject to change without prior notice to impr ove product characteristics. Before ordering, purchas ers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any dam ages that may result from an accident or any other cause duri ng operation of the user’s units according to the datas heet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any fa ilure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or par t, without the expressed written permissio n of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. A B H 0.0155±0.001 (Ag Top) Figure 1 H B A Schottky Chip Top side(Anode) metallization: A = Al - 25 kÅ minimum, Figure 1 B = Ag - 30 kÅ minimum, Figure 1 Bottom side (Cathode) metallization: A, B = Ti/Ni/Ag - 30 kÅ minimum.