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Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com REV 07/23/14 SMT Photodiode Assembly SD 040-101-411 FEATURES DESCRIPTION APPLICATIONS
- Small Footprint
- Low Capacitance
- High Speed The SD 040 -10 1-411 is an UV Enhanced Silicon Photodi- ode assembled in a 1206 SMT package.
- Industrial Sensors
- Light Management
- Handheld Devices ABSOLUTE MAXIMUM RATING TYPICAL SPECTRAL RESPONSE Ta = 25°C UNLESS OTHERWISE NOTED SYMBOL PARAMETER MIN MAX UNITS VR Reverse Voltage 50 V TOp Operating Temperature -40 +105 °C TStg Storage Temperature -50 +125 °C TS Soldering Temperature +260 °C ELECTRO -OPTICAL CHARACTERISTICS RATING Ta= 25°C, UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS Vf Forward Voltage I f=10 mA 0.5 0.8 1.3 V IL Light Current (2856K) V R = 5V; H = 1000 lux - 9.0 - uA Vbr Breakdown Voltage IR = 100 µA 50 - - V Rsh Shunt Resistance Vbias = 10 mV - 1.0 - GΩ Id Dark Current V R = 10 V - - 0.5 nA Cj Junction Capacitance V R = 5V; f = 1000 kHz - 20 - pF Advanced Photonix, Inc. ACTIVE AREA 0.9 x 0.9 sq.mm [0.035 x 0.035 sq. inch]