SD05C SEMITECH | Alldatasheet
Document overview
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Technical content
Features
z Unidirectional Configurations z Peak Power Dissipation 350W @8 x 20 us Pulse z Low Leakage z Fast Response Time < 5 ns z Protects One Power or I/O Port z ESD Protection to IEC 61000-4-2 Level 4,15KV(Air), 8KV(Contanct) z ESD Protection to IEC 61000-4-2 Level 4, 30A z 16KV Human Body Model ESD Requirements z RoHS Compliant in Lead-Free Versions
Applications
z Cell Phone Handsets and Accessories z Microprocessor Based Equiment z Personal Digital Assistant (PDA) z Notebooks, Destops, and Servers z Portable Instrumentation z Pagers Periherals Absolute Maximum Ratings Parameter Symbol Value Units Peak Power Dissipation (Note 1.) @TL = 25°C PPK 350 W IEC 61000-4-2 (ESD) Air C O N T A C T ±15 ±8.0 KV KV IEC 61000-4-4 (EFT) 30 A ESD Voltage Per Human Body Model VPP 16 KV Storage Temperature Range TSTG -55 to 150 °C Operating Junction Temperature Range TJ -55 to 150 °C 1. 8 X 20 us, non–repetitive
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. Symbol Parameter Maximum Reverse Peak Pulse Current IPP VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM IT Test Current VBR Breakdown Voltage @ IT Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VRWM (V) IR(uA) @ VRWM VBR (V)@ IT (Note 1) IT VC (V) @ IPP=5 A* VC (V) @ Max IPP* IPP (A)* Device Max Max Min Max mA Typ Max Max SD12C 12 1.0 13.3 15.75 1.0 19 25 12 *Surge current waveform per Figure 1. 1. V BR is measured with a pluse test current IT at an ambient temperature of 25℃． Fig1. Pulse Waveform Fig2. Power Derating
Millimeters Inches Dim MIN NOM MAX MIN NOM MAX A3 0.15 REF 0.006 REF L 0.08 0.003