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WWW.ADVANCEDPHOTONIX.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 11-26-14 © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 Adva nce d P hotonix, Inc. DESCRIPTION FEATURES The SD039-151-011 is a high sensitivity , low noise , 1 mm diameter active area InGaAs photodiode (chip dimensions 1.36mmx1.36mm) for detection at SWIR , NIR wavelengths for imaging and sensing applications. Photodetector assembled in a TO-46 package. Low Noise, High Sensitivity Detection at SWIR and NIR RELIABILITY APPLICATIONS This API high-reliability detector is in principle able to meet military test requirements (Mil-STD-750, Mil-STD-883) after proper screening and group test. Contact API for recommendations on specific test conditions and procedures. Industrial Sensing Security and Defense Communication Medical ABSOLUTE MAXIMUM RATINGS Ta = 23°C non condensing 1/16 inch from case for 3 seconds max SYMBOL MIN MAX UNITS Reverse Voltage - 40 V Operating Temperature -40 +100 °C Storage Temperature -55 +125 °C Soldering Temperature - +260 °C
WWW.ADVANCEDPHOTONIX.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 11-26-14 © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 Adva nce d P hotonix, Inc. ELECTRO-OPTICAL CHARACTERISTICS RATINGS Ta = 23°C unless noted otherwise PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Breakdown Voltage Ibias = 1 A 20 - 40 V Spectral Range 800 - 1700 nm Responsivity = 1310 nm,Vr=5V 0.8 0.9 - A/W Shunt Resistance Vbias = 10 mV 40 200 - M Dark Current Vbias = 5V - 0.2 10 nA Capacitance Vbias = 5V; f = 1.0 MHz - 70 150 pF Rise Time (50 load) Vbias = 5V; = 1310 nm - 2.0 - ns Noise Equivalent Power Vr= 5V@ =1310 - 1.0x10-14- - fW/√Hz TYPICAL PERFORMANCE NOISE CURRENT vs. REVERSE BIAS DARK CURRENT vs. REVERSE BIAS SPECTRAL RESPONSE CAPACITANSE vs. REVERSE BIAS 1.E-15 1.E-14 1.E-13 1.E-12 Noise Current (A/rt_Hz) Reverse Voltage (V) 1.E-12 1.E-11 1.E-10 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 Reverse Dark Current [A] Reverse Voltage [V] 0.05 0.15 0.25 0.35 0.45 0.55 0.65 0.75 0.85 0.95 680 880 1080 1280 1480 1680 Responsivity,A/W Wavelenght, nm 105 125 145 165 0 5 10 15 20 Capacitance [pF] Reverse Bias [V]