SD039-121-011 ADVANCEDPHOTONIX | Alldatasheet

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WWW.ADVANCEDPHOTONIX.COM Precision – Control – Results Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice . Page 1/2 REV 8-27-15 © 2015 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 Advanced Photonix, Inc. DESCRIPTION FEATURES The SD039-121-011 is a high sensitivity, low capaci tance and noise, 1mm diameter active area InGaAs photodiode, sensitive t o wavelengths in visible extended (450-1700nm) spectral range and us ed sensing applications. The photodetector is assembled in a T O-46 package.

  • Low Noise
  • Low Dark Current and Capacitance
  • High Sensitivity
  • Light Detection (Visible, NIR, SWIR) RELIABILITY APPLICATIONS This API high- reliability detector is in principle able to meet m ilitary test requirements (Mil-STD-750, Mil-STD-883) after p roper screening and group test. Contact API for recommendations on specific test co nditions and procedures.
  • Industrial Sensing
  • Security and Defense
  • Communication MOISTURE SENSITIVITY LEVEL ESD API silicon light dependent resistors are classifie d as MSL level 1 per J-STD-020 allowing for unlimited floor time at temperatur es less than or equal to 30° C and humidity less than or equal to 85%. This device is Class 1A (HBM). ABSOLUTE MAXIMUM RATINGS Ta = 23° C non condensing SYMBOL MIN MAX UNITS Operating Temperature 0 +85 ° C Storage Temperature -25 +85 ° C Soldering Temperature * - +240 ° C Wavelength Range 450 1700 nm Reverse Voltage - 20 V *) 1/16 inch from case for 3s max.

WWW.ADVANCEDPHOTONIX.COM Precision – Control – Results Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice . Page 2/2 REV 8-27-15 © 2015 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 Advanced Photonix, Inc. OPTO-ELECTRICAL PARAMETERS Ta = 23° C unless noted otherwise PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Breakdown Voltage Ibias = 100 µ A 10 - - V Responsivity λ = 600 nm 0.3 0.35 - A/W Responsivity λ = 1200 nm 0.8 0.85 - A/W Responsivity λ = 1550 nm 0.9 1.00 - A/W Shunt Resistance Vbias = 10 mV 0.8 5 - MΩ Dark Current V bias = 1V - 20 100 nA Capacitance V bias = 1V; f = 1 MHz - 40 70 pF Rise Time (50 Ω load) Vbias = 1V; λ = 826 nm - 5 - ns Noise Equivalent Power λ = 900 nm - 1.6 - 10 -13W/Hz 0.5 TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.2 0.4 0.6 0.8 1.2 400 600 800 1000 1200 1400 1600 1800 Responsivity, A/W Wavelenght, nm