SD036-70-62-531 ADVANCEDPHOTONIX | Alldatasheet
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Technical content
FEATURES DESCRIPTION APPLICATIONS
- Low noise
- Small size
- High Speed
- Low cost SYMBOL PARAMETER MIN MAX UNITS VBR Reverse Voltage 130 280 V TSTG Storage Temperature -40 +85 °C TO Operating Temperature -40 +55 °C TS Soldering Temperature* +240 °C SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ID Dark Current 7 30 nA CJ Junction Capacitance f = 1 MHz 10 pF IN Noise Current Spectral Density f = 100 kHz 0.12 pA/√Hz lrange Spectral Application Range Spot Scan 400 1100 nm l= 660nm, VR = 0 V 30 R Responsivity l= 830nm, VR = 0 V 47 A/W Vop Operating voltage 130 280 V tr Response Time** RL = 50 Ω, l= 675nm 2 nS SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS SPECTRAL RESPONSE 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100Wavelength (nm) Responsivity (A/W) Small Area Silicon Avalanche Photodiode SD 036-70-62-531 PACKAGE DIMENSIONS INCH / mm TO-5 PACKAGE The SD 036-70-62-531 is a 0.9 mm diameter small area silicon avalanche photodiode (APD) that provides high gain and low noise, packaged in a hermetic TO-5 metal can with a flat window.
- Military
- Industrial
- Medical * 1/16 inch from case for 3 seconds max. ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED CHIP DIMENSIONS INCH [mm] QER ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and Gain = 100 at 830nm UNLESS OTHERWISE ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and gain of 100 at 820nm UNLESS OTHERWISE NOTED **Response time of 10% to 90% is specified at 820nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com