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Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. © 2013 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com REV 07/29/14 SMT Photodiode Assembly SD 019-111-411 FEATURES DESCRIPTION APPLICATIONS

  • Small Footprint
  • Low Capacitance
  • High Speed The SD 019 -111 -411 is a silicon photodiode assembled in a 0805 SMT package.
  • Industrial Sensors
  • Light Management
  • Handheld Devices ABSOLUTE MAXIMUM RATING TYPICAL SPECTRAL RESPONSE Ta = 25°C UNLESS OTHERWISE NOTED SYMBOL PARAMETER MIN MAX UNITS VR Reverse Voltage 50 V TOp Operating Temperature -40 +105 °C TStg Storage Temperature -50 +125 °C TS Soldering Temperature* +260 °C ELECTRO -OPTICAL CHARACTERISTICS RATING Ta= 25°C, UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS Vf Forward Voltage I f=10 mA 0.5 0.8 1.3 V IL Light Current (2856K) V R = 5V; H = 1000 lux - 3.2 - µA Vbr Breakdown Voltage IR = 100 µA 50 - - V Rsh Shunt Resistance Vbias = 10 mV - 2.0 - GΩ Id Dark Current V R = 10 V - - 0.5 nA Cj Junction Capacitance V R = 5V; f = 1000 kHz - 6.0 - pF tr Rise Time VR = 3V; R i= 1000 Ω - 1 - uS Advanced Photonix, Inc. 0.0 0.1 0.2 0.3 0.4 0.5 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 Responsivity [A/W] Wavelength [nm]