SD012-121-011 ADVANCEDPHOTONIX | Alldatasheet

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Technical content

WWW.ADVANCEDPHOTONIX.COM Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice . Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987 Advanced Photonix, Inc.

DESCRIPTION

The SD 01 2-12 1-01 1 is a hig h sensitivity, 0.3mm diameter active area InGaAs photodiode in visible extended (450-1700nm) spectral range and used applications. The photodetector is assembled RELIABILITY This API high- reliability detector is in principle able to meet m ilitary test requirements (Mil-STD-750, Mil-STD- 883) after p group test. Contact API for recommendations on specific test co nditions and procedures. MOISTURE SENSITIVITY LEVEL API silicon light dependent resistors are classifie d as MSL level 1 per J-STD-020 allowing for unlimited floor time at temperatur es less than or equal to 30° C and humidity less than or equal to 85%. ABSOLUTE MAXIMUM RATINGS SYMBOL MIN Operating Temperature 0 Storage Temperature - 25 Soldering Temperature * - Wavelength Range 450 Reverse Voltage - *) 1/16 inch from case for 3s max. InGaAs Photodiode Precision Page 1/2 © 2015 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987 -0146 • Fax (805) 484

FEATURES

h sensitivity, low capacitance and noise, active area InGaAs photodiode , sensitive to wavelengths spectral range and used for sensing applications. The photodetector is assembled in a TO-46 package.

  • Low Noise
  • Low Dark Current and Capacitance
  • High Sensitivity
  • Light Detection (Visible, NIR,

APPLICATIONS

reliability detector is in principle able to meet m ilitary test 883) after p roper screening and Contact API for recommendations on specific test co nditions and

  • Industrial Sensing
  • Security and Defense
  • Communication ESD API silicon light dependent resistors are classifie d as MSL level 1 per 020 allowing for unlimited floor time at temperatur es less than or humidity less than or equal to 85%. This device is Class Ta = 23° C non condensing MIN MAX UNITS 0 +85 ° C 25 +85 ° C - +240 ° C 450 1700 nm - 20 V InGaAs Photodiode SD012-121-011 Precision – Control – Results REV 8-27-15 Advanced Photonix, Inc. All rights reserved. 0146 • Fax (805) 484 -9935 Low Dark Current and Capacitance High Sensitivity Light Detection (Visible, NIR, SWIR)

This device is Class 1A (HBM). non condensing

WWW.ADVANCEDPHOTONIX.COM Precision – Control – Results Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice . Page 2/2 REV 8-27-15 © 2015 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 Advanced Photonix, Inc. OPTO-ELECTRICAL PARAMETERS Ta = 23° C unless noted otherwise PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Breakdown Voltage Ibias = 100 µ A 10 - - V Responsivity λ = 600 nm 0.3 0.35 - A/W Responsivity λ = 1200 nm 0.7 0.85 - A/W Responsivity λ = 1550 nm 0.9 1.00 - A/W Shunt Resistance Vbias = 10 mV 5 30 - MΩ Dark Current V bias = 1V - 2 20 nA Capacitance V bias = 1V; f = 1 MHz - 6 20 pF Rise Time (50 Ω load) Vbias = 1V; λ = 826 nm - 5 - ns Noise Equivalent Power λ = 900 nm - 1.0 - 10 -13W/Hz 0.5 TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.2 0.4 0.6 0.8 1.2 400 600 800 1000 1200 1400 1600 1800 Responsivity, A/W Wavelenght, nm