SD008-11-41-211 ADVANCEDPHOTONIX | Alldatasheet
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Technical content
FEATURES DESCRIPTION APPLICATIONS
- Low noise
- Low dark current
- High response SYMBOL PARAMETER MIN MAX UNITS VBR Reverse Voltage 75 V TSTG Storage Temperature -55 +100 °C TO Operating Temperature -40 +85 °C TS Soldering Temperature* +260 °C SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ID Dark Current V R = 5V 1 5.0 nA RSH Shunt Resistance V R = 10 mV 100 300 MW CJ Junction Capacitance V R = 5V, f = 1 MHz 9 10 pF lrange Spectral Application Range Spot Scan 800 1700 nm R Responsivity l= 1310nm, VR = 5V 0.83 0.92 A/W VBR Breakdown Voltage I = 1jA 10 V NEP Noise Equivalent Power VR = 5V @ l=1310nm 1.79X10 -14 W/ ¥ Hz tr Response Time** RL = 50 ,VR = 5V 0.23 nS SPECTRAL RESPONSE 0.2 0.4 0.6 0.8 1.2 800 900 1000 1100 1200 1300 1400 1500 1600 1700 Wavelength (nM) Responsivity (A/W) InGaAs Photodetectors SD 008-11-41-211 The SD 008-11-41-211 is a high sensitivity low noise characteristics InGaAs photodiode packaged in a leaded hermetic TO-46 metal package.
- Communication
- Industrial
- Medical * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED **Response time of 10% to 90% is specified at 1310nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com REV 7/31/06 ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED CHIP 0.210 [5.33] 0.165 [4.19] PACKAGE DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] TO-46 PACKAGE 88° 0.184 [4.67] 0.145 [3.69] 0.059 [1.50] 0.50 [12.7] 3X 0.019 [0.48] 0.016 [0.40] 0.016 [0.40] .0079 [.200] ACTIVE AREA