SD004-11-41-211 ADVANCEDPHOTONIX | Alldatasheet
Document overview
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Technical content
FEATURES DESCRIPTION APPLICATIONS
- Low noise Ø 0.210 [5.33] PACKAGE DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] TO-46 PACKAGE Ø 0.184 [4.67] 0.145 [3.69] 0.065 [1.66] 0.50 [12.7] 4X Ø 0.019 [0.48] 0.016 [0.40] 0.016 [0.40] Ø .0079 [.200] ACTIVE AREA 0.029 [0.73]
3 ANODE
4 CASE GROUND
1 CATHODE
Ø 0.055 [1.40] CHIP
2 NOT USED
- Low dark current
- High response SYMBOL PARAMETER MIN MAX UNITS VBR Reverse Voltage 75 V TSTG Storage Temperature -55 +100 °C TO Operating Temperature -40 +85 °C TS Soldering Temperature* +260 °C SPECTRAL RESPONSE 0.2 0.4 0.6 0.8 1.2 800 900 1000 1100 1200 1300 1400 1500 1600 1700 Wavelength (nM) Responsivity (A/W) ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED * 1/16 inch from case for 3 seconds max.
- Communications
- Industrial
- Medical The SD 004-11-41-211 is a high sensitivity low noise characteristics InGaAs photodiode packaged in a leaded hermetic TO-46 metal package. SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ID Dark Current VR = 5V 0.8 1.0 nA RSH Shunt Resistance VR = 10 mV 400 1000 MW CJ Junction Capacitance VR = 5V, f = 1 MHz 0.75 0.95 pF lrange Spectral Application Range Spot Scan 800 1700 nm R Responsivity l= 1310nm, VR = 5V 0.83 0.92 A/W VBR Breakdown Voltage I = 1μA 18 V NEP Noise Equivalent Power VR = 5V @ l=1310nm 1.43X10-14 W/ √ Hz tr Response Time RL = 50 Ω,VR = 5V 0.18 nS Response time of 10% to 90% is specified at 1310nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com REV 1/16/07