SCT616C SMCDIODE | Alldatasheet

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Data Sheet N2037, Rev.A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT616C SCTX816C SCT616/816 Series 16A SCRs Circuit Diagram

Description

Maximum Ratings: Characteristics Symbol Condition Max. Units Storage junction temperature range TJ - -40 to +125 C Operating junction temperature range Tstg - -40 to +150 C Repetitive peak off-state voltage VDRM - 600/800 V Repetitive peak reverse voltage VRRM - 600/800 V Non repetitive peak off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V RMS on-state current I(TRMS) TO-220C(TC=110℃) 16 A Non repetitive surge peak on-state current (tp=10ms) ITSM - 180 A I2t value for fusing (tp=10ms) I2t - 162 A2s Critical rate of rise of on-state current (IG=2×IGT) dI/dt - 50 A/μs Peak gate current IGM - 4 A Average gate power dissipation PG(AV) - 1 W Peak gate power PGM - 5 W With high ability to withstand the shock loading of large current, SCT616/816 series of silicon controlled rectifiers provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. TO-220C

Data Sheet N2037, Rev.A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT616C SCTX816C Symbol Test Condition Value UnitMIN. TYP. MAX. IGT VD=12V RL=33Ω - - 15 mA VGT - - 1.3 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ 0.2 - - V IL IG=1.2IGT - - 60 mA IH IT=500mA - - 50 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ 200 - - V/μs Electrical Characteristics(Tj=25℃ unless otherwise specified) Static Characteristics Symbol Condition Max. Units VTM IT=32A tp=380μs,Tj=25℃ 1.55 V IDRM VD=VDRM VR=VRRM, Tj=25℃ 5 μA IRRM VD=VDRM VR=VRRM, Tj=125℃ 2 mA Thermal Resistances Symbol Condition Value Units Rth(j-c) Junction to case(AC) TO-220C 1.1 ℃/W

Ordering Information

SCT616/816 Series TO-220C 50pcs/ Tube S CT 6 16 C SMC Diode Solutions SCRs C:TO-220C 600:VDRM/VRRM ≥ 600V 800:VDRM/VRRM ≥ 800V IT(RMS):16A

Data Sheet N2037, Rev.A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT616C SCTX816C FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) 0 4 8 12 16 20

0 IT(RMS) (A) Tc (℃)0

(Non-Ins) 10 12 α=180° Marking Diagram Mechanical Dimensions TO-220C SYMBOL Millimeters Inches A 4.40 4.60 0.173 0.181 B 0.70 0.90 0.028 0.035 C 0.45 0.60 0.018 0.024 C2 1.23 1.32 0.048 0.052 C3 2.20 2.60 0.087 0.102 D 8.90 9.90 0.350 0.390 E 9.90 10.3 0.39 0.406 F 6.30 6.90 0.248 0.272 G 2.54 0.1 H 28.0 29.8 1.102 1.173 L1 3.39 0.133 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 ϕ 3.6 0.142 Ratings and Characteristics Curves Where XXXXX is YYWWL SCT616C = Part name YY = Year WW = Week L = Lot Number TO-220C

Data Sheet N2037, Rev.A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT616C SCTX816C FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics (maximum values) 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) 0 1 2 3 4 51 Tj=25℃ 100 Tj=125℃ 120 180 150 210 One cycle tp=10ms FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t (dI/dt<50A/μs) tp(ms) 0.01 0.1 1 10 ITSM (A), I t (A s) -40 -20 0 20 40 60 80 100 120 140 IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 0.0 0.5 1.5 2.0 3.0 1.0 2.5 Tj(℃) IGT 2000 100 1000 I t 2dI/dt IH&IL ITSM

Data Sheet N2037, Rev.A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT616C SCTX816C DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..