SCTWA60N120G2-4 STM | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Package information
- 3.1 HiP247-4 package information
Features
Order code VDS RDS(on) max. ID SCTWA60N120G2-4 1200 V 52 mΩ 60 A
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (T J = 200 °C)
- Source sensing pin for increased efficiency
Applications
- Switching mode power supply
- DC-DC converters
- Industrial motor control
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTWA60N120G2-4 Product summary Order code SCTWA60N120G2-4 Marking SCT60N120G2 Package HiP247-4 Packing Tube Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247-4 package SCTWA60N120G2-4 Datasheet DS13620 - Rev 3 - June 2021 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 3. On/off states Table 4. Dynamic Table 5. Switching energy (inductive load) Table 6. Switching times
Electrical characteristics
Table 7. Reverse SiC diode characteristics
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics (TJ = 25 °C)
12 V 10 V
Figure 4. Typical output characteristics (TJ = 200 °C) Figure 5. Typical transfer characteristics Figure 6. Total power dissipation
3 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
3.1 HiP247-4 package information
Figure 17. HiP247-4 package outline
Package information
Table 8. HiP247-4 mechanical data
Revision history
Table 9. Document revision history 19-Feb-2021 1 First release. Modified Table 3. On/off states. Modified Table 1. Absolute maximum ratings. Figure 16. Typical reverse conduction characteristics (TJ = 200 °C).