SCTL35N65G2V STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Package information
  • 3.1 PowerFLAT 8x8 HV type A package information
  • 3.2 PowerFLAT 8x8 HV packing information

Features

Order code VDS RDS(on) max. ID SCTL35N65G2V 650 V 67 mΩ 40 A

  • Very fast and robust intrinsic body diode
  • Low capacitances
  • Source sensing pin for increased efficiency

Applications

  • Switching mode power supply
  • DC-DC converters
  • Industrial motor control

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTL35N65G2V Product summary Order code SCTL35N65G2V Marking 35N65G2V Package PowerFLAT 8x8 HV Packing Tape and reel Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 40 A in a PowerFLAT 8x8 HV package SCTL35N65G2V Datasheet DS13474 - Rev 1 - December 2020 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Value limited by package.
  2. Pulse width is limited by safe operating area.

Table 2. Thermal data

  1. When mounted on an 1-inch² FR-4, 2 Oz copper board.

2 Electrical characteristics

(TC = 25 °C unless otherwise specified). Table 3. On/off states Table 4. Dynamic, based on HiP247 package option Table 5. Switching energy (inductive load), based on HiP247 package option Table 6. Switching times, based on HiP247 package option

Electrical characteristics

Table 7. Reverse diode characteristics, based on HiP247 package option

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics (TJ = 25 °C), Figure 4. Output characteristics (TJ = 175 °C), Figure 5. Transfer characteristics, Figure 6. Gate charge vs gate-source voltage,

3 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

3.1 PowerFLAT 8x8 HV type A package information

Figure 15. PowerFLAT 8x8 HV type A package outline

Package information

Table 8. PowerFLAT 8x8 HV type A mechanical data Figure 16. PowerFLAT 8x8 HV footprint Note: All dimensions are in millimeters.

3.2 PowerFLAT 8x8 HV packing information

Figure 17. PowerFLAT 8x8 HV tape Note: All dimensions are in millimeters. Figure 18. PowerFLAT 8x8 HV package orientation in carrier tape

Figure 19. PowerFLAT 8x8 HV reel Note: All dimensions are in millimeters.

Revision history

Table 9. Document revision history 02-Dec-2020 1 First release.