SCTHC250N120G3AG STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 11
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Package information
- 3.1 STPAK high creepage package information
Features
Order code VDS RDS(on) typ. ID SCTHC250N120G3AG 1200 V 8.5 mΩ 239 A
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
- Low thermal resistance multi sintering package
- 7.3 mm minimum creepage (including 0.6 mm particles)
- 1020 Vrms PD2 Application
- Main inverter (electric traction)
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. 4 2 STPAK high creepage NG3DS2PS1D4 Drain(4) Driver source(2) Gate(3) Power source(1) Product status link SCTHC250N120G3AG Product summary Order code SCTHC250N120G3AG Marking HC25N120G3AG Package STPAK high creepage Packing Tube Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK high creepage package SCTHC250N120G3AG Datasheet DS14624 - Rev 2 - May 2024 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 3. On/off states Table 4. Dynamic Table 5. Switching energy (inductive load) Table 6. Reverse SiC diode characteristics
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics (TJ = 25 °C) Figure 4. Typical output characteristics (TJ = 200 °C) Figure 5. Typical transfer characteristics Figure 6. Total power dissipation
3 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
3.1 STPAK high creepage package information
Figure 17. STPAK high creepage package outline
Package information
Table 7. STPAK high creepage package mechanical data
Revision history
Table 8. Document revision history 07-Mar-2024 1 First release. 09-May-2024 2 Modified Table 1. Absolute maximum ratings.
IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2024 STMicroelectronics – All rights reserved SCTHC250N120G3AG DS14624 - Rev 2 page 11/11