SCTH35N65G2V-7 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves), based on HiP247 package option
- 3 Test circuits
- 4 Package information
- 4.1 H²PAK-7 package information
- 4.2 Packing information
Features
Order code VDS RDS(on) max. ID SCTH35N65G2V-7 650 V 67 mΩ 45 A
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Source sensing pin for increased efficiency
Applications
- Switching mode power supply
- DC-DC converters
- Industrial motor control
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTH35N65G2V-7 Product summary Order code SCTH35N65G2V-7 Marking SCT35N65 Package H²PAK-7 Packing Tape and reel Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package SCTH35N65G2V-7 Datasheet DS12047 - Rev 5 - December 2020 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 3. On/off states Table 4. Dynamic, based on HiP247 package option Table 5. Switching energy (inductive load), based on HiP247 package option Table 6. Switching times, based on HiP247 package option
Electrical characteristics
Table 7. Reverse SiC diode characteristics
2.1 Electrical characteristics (curves), based on HiP247 package option
Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics (TJ= 25 °C) Figure 4. Output characteristics (TJ= 175 °C) Figure 5. Transfer characteristics Figure 6. Total power dissipation
3 Test circuits
Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior Figure 18. Test circuit for inductive load switching and Figure 19. Unclamped inductive load test circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 H²PAK-7 package information
Figure 22. H²PAK-7 package outline
Package information
Table 8. H²PAK-7 package mechanical data Figure 23. H²PAK-7 recommended footprint
4.2 Packing information
Figure 24. Tape outline Figure 25. Reel outline
Table 9. Tape and reel mechanical data
Revision history
Table 10. Document revision history 27-Feb-2017 1 First release. Modified Table 4: "On/off states". Updated title, Features and Description in cover page. Updated Table 1. Absolute maximum ratings. Updated Table 7. Reverse SiC diode characteristics.