SCTH100N120G2-AG STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 14
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 H²PAK-7 package information
- 4.2 Packing information
Features
Order code VDS RDS(on)typ. ID SCTH100N120G2-AG 1200 V 30 mΩ 75 A
- AEC-Q101 qualified
- High speed switching performance
- Very fast and robust intrinsic body diode
- Low capacitance
Applications
- Traction inverters
- DC-DC converters
- Solar inverters
- OBC
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTH100N120G2-AG Product summary Order code SCTH100N120G2-AG Marking 100N120AG Package H²PAK-7 Packing Tape and reel Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package SCTH100N120G2-AG Datasheet DS12783 - Rev 2 - July 2020 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified). Table 3. On/off states Table 4. Dynamic Table 5. Switching energy Table 6. Reverse SiC diode characteristics
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C) Figure 5. Transfer characteristics Figure 6. Total power dissipation
3 Test circuits
Figure 18. Switching times test circuit for resistive load Figure 19. Test circuit for gate charge behavior Figure 20. Test circuit for inductive load switching and Figure 21. Unclamped inductive load test circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 H²PAK-7 package information
Figure 24. H²PAK-7 package outline
Package information
Table 7. H²PAK-7 package mechanical data Figure 25. H²PAK-7 recommended footprint
4.2 Packing information
Figure 26. Tape outline
Figure 27. Reel outline Table 8. Tape and reel mechanical data
Revision history
Table 9. Document revision history 03-Dec-2018 1 First release. 23-Jul-2020 2 Modified Table 3. On/off states and Table 6. Reverse SiC diode characteristics.