SCT50N120 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 11
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Package information
- 3.1 HiP247™ package information
- 4 Revision history
Features
Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Low capacitance
Applications
Solar inverters, UPS Motor drives High voltage DC-DC converters Switch mode power supplies
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Table 1: Device summary Order code Marking Package Packaging SCT50N120 SCT50N120 HiP247™ Tube AM01475v1_noZen D(2, TAB) G(1) S(3)
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V ID Drain current (continuous) at TC = 25 °C 65 A ID Drain current (continuous) at TC = 100 °C 50 A IDM(1) Drain current (pulsed) 130 A PTOT Total dissipation at TC = 25 °C 318 W Tstg Storage temperature range -55 to 200 Tj Operating junction temperature range °C Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.55 °C/W Rthj-amb Thermal resistance junction-ambient 40 °C/W
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified). Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit IDSS Zero gate voltage drain current VDS = 1200 V, VGS = 0 V 1 100 µA VDS = 1200 V, VGS = 0 V, TJ = 200 °C µA IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA 1.8 3.0 V RDS(on) Static drain-source on-resistance VGS = 20 V, ID = 40 A 52 69 mΩ VGS = 20 V, ID = 40 A, TJ = 150 °C mΩ VGS = 20 V, ID = 40 A, TJ = 200 °C mΩ Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 400 V, f = 1 MHz, VGS = 0 V - 1900 - pF Coss Output capacitance - 170 - pF Crss Reverse transfer capacitance - 30 - pF Qg Total gate charge VDD = 800 V, ID = 40 A, VGS = 0 to 20 V - 122 - nC Qgs Gate-source charge - 19 - nC Qgd Gate-drain charge - 35 - nC Rg Gate input resistance f=1 MHz open drain - 1.9 - Ω Table 6: Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon Turn-on switching energy VDD = 800 V, ID = 40 A RG= 2.2 Ω, VGS = -5 to 20 V - 530 - µJ Eoff Turn-off switching energy - 310 - µJ Eon Turn-on switching energy VDD = 800 V, ID = 40 A RG= 2.2 Ω, VGS = -5 to 20 V TJ= 150 °C - 670 - µJ Eoff Turn-off switching energy - 334 - µJ Table 7: Reverse SiC diode characteristics Symbol Parameter Test conditions Min Typ. Max Unit VSD Diode forward voltage IF = 20 A, VGS = 0 V - 3.5 - V trr Reverse recovery time IF = 40 A, di/dt = 2000/ns VDD = 800 V - 55 ns Qrr Reverse recovery charge - 230 - nC IRRM Reverse recovery current - 14 - A
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics (TJ= 25 °C) Figure 5: Output characteristics (TJ= 150 °C) Figure 6: Output characteristics (TJ= 200 °C) Figure 7: Transfer characteristics
3 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
3.1 HiP247™ package information
Figure 19: HiP247™ package outline
Table 8: HiP247™ package mechanical data Dim. mm Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70
4 Revision history
Table 9: Document revision history Date Revision Changes 17-Jun-2015 1 First release 12-May-2016 2 Modified title. Modified: Table 2: "Absolute maximum ratings", Table 4: "On/off states", Table 5: "Dynamic", Table 6: "Switching energy (inductive load)", and Table 7: "Reverse SiC diode characteristics". Added: Section 4.1: "Electrical characteristics (curves)". Minor text changes. 23-Jun-2016 3 Document status promoted from preliminary to production data. 03-Apr-2017 4 Modified Table 7: "Reverse SiC diode characteristics" Modified Figure 7: "Transfer characteristics", Figure 15: "Normalized on-resistance vs. temperature", Figure 16: "Reverse conduction characteristics (TJ = -50 °C)", Figure 17: "Reverse conduction characteristics (TJ = 25 °C)" and Figure 18: "Reverse conduction characteristics (TJ = 150 °C)" Updated Section 3: "Package information" Minor text changes.