SCT30N120 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Package information
- 3.1 HiP247 package information
- 4 Revision history
Features
Very tight variation of on-resistance vs. temperature Very high operating temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Low capacitance
Applications
Solar inverters, UPS Motor drives High voltage DC-DC converters Switch mode power supply
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high- efficiency and high power density applications. Table 1: Device summary Order code Marking Package Packaging SCT30N120 SCT30N120 HiP247™ Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”. See Section 6: "Package information". HiP247 AM01475v1_Tab D(2, TAB) G(1) S(3)
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V ID Drain current (continuous) at TC = 25 °C (limited by die) 45 A ID Drain current (continuous) at TC = 25 °C (limited by package) 40 A ID Drain current (continuous) at TC = 100 °C 34 A IDM(1) Drain current (pulsed) 90 A PTOT Total dissipation at TC = 25 °C 270 W Tstg Storage temperature range -55 to 200 Tj Operating junction temperature range °C Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.65 °C/W Rthj-amb Thermal resistance junction-ambient max 40 °C/W
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified). Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit IDSS Zero gate voltage drain current (VGS = 0 V) VDS = 1200 V 1 100 µA VDS = 1200 V, TJ = 200 °C µA IGSS Gate-body leakage current (VDS = 0) VGS = -10 to 22 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA 1.8 3.5 V RDS(on) Static drain-source on- resistance VGS = 20 V, ID = 20 A 80 100 mΩ VGS = 20 V, ID = 20 A, TJ = 150 °C mΩ VGS = 20 V, ID = 20 A, TJ = 200 °C 100 mΩ Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 400 V, f = 1 MHz, VGS = 0 V - 1700 - pF Coss Output capacitance - 130 - pF Crss Reverse transfer capacitance - 25 - pF Qg Total gate charge VDD = 800 V, ID = 20 A, VGS = 0 to 20 V - 105 - nC Qgs Gate-source charge - 16 - nC Qgd Gate-drain charge - 40 - nC Rg Gate input resistance f=1 MHz open drain - 5 - Ω Table 6: Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon Turn-on switching energy VDD = 800 V, ID = 20 A, RG = 6.8 Ω, VGS = - 2 to 20 V - 500 - µJ Eoff Turn-off switching energy - 350 - µJ Eon Turn-on switching energy VDD = 800 V, ID = 20 A, RG = 6.8 Ω, VGS = - 2 to 20 V, TJ = 150 °C - 500 - µJ Eoff Turn-off switching energy - 400 - µJ Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 800 V, ID = 20 A, RG = 0 Ω, VGS = 0 to 20 V - 19 - ns tf Fall time - 28 - ns td(off) Turn-off delay time - 45 - ns tr Rise time - 20 - ns
Table 8: Reverse SiC diode characteristics Symbol Parameter Test conditions Min Typ. Max Unit VSD Diode forward voltage IF = 10 A, VGS = 0 V - 3.5 - V trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs VDD = 800 V - 140 ns Qrr Reverse recovery charge - 140 - nC IRRM Reverse recovery current - 2 - A
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 150 °C) Figure 6: Output characteristics (TJ = 200 °C) Figure 7: Transfer characteristics
3 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
3.1 HiP247 package information
Figure 22: HiP247™ package outline
Table 9: HiP247™ package mechanical data Dim. mm. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70
4 Revision history
Table 10: Document revision history Date Revision Changes 10-May-2012 1 First release 21-May-2013 2 Updated trr value in Table8. Updated dynamic parameters in Table5, VGS(th) in Table4 and Eon in Table6. 24-Jun-2013 3 Document status promoted from target to preliminary data. Added: Section2.1: Electrical characteristics (curves) 11-Jul-2013 4 Updated Figure6: Output characteristics (TJ=200°C) and Figure7: Transfer characteristics. 18-Dec-2013 5 Updated parameters in Table2: Absolute maximum ratings and Table4: On/off states. 27-May-2014 6 Added Table7: Switching times. Updated Section3: Package mechanical data. Minor text changes. 25-Sep-2014 7 Document status promoted from preliminary to production data. 17-Feb-2015 8 Updated title in cover page. 20-Feb-2015 9 Updated Section2.1: Electrical characteristics (curves). 24-Jul-2016 10 Updated title and features in cover page. Updated Figure 2: "Safe operating area" and Figure 3: "Thermal impedance". Minor text changes.