SCT151K-650R SMCDIODE | Alldatasheet

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Data Sheet N2049, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT151K -650R SCT151K -800R SCT151C-650R SCT151 Series 12A SCRs TO-251-4R A(2) K(1) G(3) TO-220B Non-Insulated TO-220A Insulated TO-220F Insulated 1 1 2 2 3 3 TO-252-4R TO-263 Circuit Diagram

Description

Maximum Ratings: Characteristics Symbol Condition Max. Units Storage junction temperature range Tstg - -40-150 ℃ Operating junction temperature range Tj - -40-125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM - 650/800 V Repetitive peak reverse voltage(Tj=25℃) VRRM - 650/800 V RMS on-state current I(TRMS) DPAK(TC=98℃) 12 ATO-220C(TC=100℃) Non repetitive surge peak on-state current (tp=10ms) ITSM - 120 A I2t value for fusing (tp=10ms) I2t - 72 A2s Repetitive rate of rise of on-state current (IG=2×IGT) dIT/dt - 50 A/μs Peak gate current IGM - 2 A Peak gate power PGM - 5 W Average gate power dissipation PG(AV) - 0.5 W With high ability to withstand the shock loading of large current, SCT151 series of silicon controlled rectifiers provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. TO-220C DPAK

Data Sheet N2049, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT151K -650R SCT151K -800R SCT151C-650R Symbol Test Condition Value UnitMIN. TYP. MAX. IGT VD=12V RL=33Ω - 4 15 mA VGT - 0.75 1.5 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ 0.2 - - V IL IG=1.2IGT - 12 40 mA IH IT=500mA - 12 30 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ 200 400 - V/μs Electrical Characteristics(Tj=25℃ unless otherwise specified) Static Characteristics Symbol Condition Max. Units VTM IT=23A tp=380μs,Tj=25℃ 1.6 V IDRM VD=VDRM VR=VRRM, Tj=25℃ 10 μA IRRM VD=VDRM VR=VRRM, Tj=125℃ 1 mA Thermal Resistances Symbol Condition Value Units Rth(j-c) Junction to case(AC) DPAK 1.4 ℃/WTO-220C 1.3

Ordering Information

SCT151C-650R TO-220C 50pcs/ Tube SCT151K -650R/800R DPAK 2500pcs/ Reel SCT151K -650R/800RTR DPAK 2500pcs/ Reel S CT 151 C -650R SMC Diode Solutions SCRs 650R:VDRM/VRRM ≥ 650V 800R:VDRM/VRRM ≥ 800V IT(RMS):12A C:TO-220C K:DPAK

Data Sheet N2049, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT151K -650R SCT151K -800R SCT151C-650R Marking Diagram Mechanical Dimensions TO-220C SYMBOL Millimeters Inches A 4.40 4.60 0.173 0.181 B 0.70 0.90 0.028 0.035 C 0.45 0.60 0.018 0.024 C2 1.23 1.32 0.048 0.052 C3 2.20 2.60 0.087 0.102 D 8.90 9.90 0.350 0.390 E 9.90 10.3 0.39 0.406 F 6.30 6.90 0.248 0.272 G 2.54 0.1 H 28.0 29.8 1.102 1.173 L1 3.39 0.133 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 ϕ 3.6 0.142 Mechanical Dimensions DPAK SYMBOL Millimeters Inches A 2.10 2.50 0.083 0.098 A2 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 D1 5.30REF 0.209REF E 6.40 6.80 0.252 0.268 E1 4.63 0.182 G 4.47 4.67 0.176 0.184 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 V1 7° 7° V2 0° 6° 0° 6° Where XXXXX is YYWWL SCT151C-650R = Part name SCT151K-650R = Part name YY = Year WW = Week L = Lot Number

Data Sheet N2049, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT151K -650R SCT151K -800R SCT151C-650R FIG.3: Surge peak on-state current versus number of cycles FIG.1: Maximum power dissipation versus RMS on-state current FIG.4: On-state characteristics (maximum values) FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) 0 3 6 9 12 16

0 IT(RMS) (A) Tc (℃)0

ITSM (A) ITM (A) VTM (V) 0 1 2 3 4 51 DPAK TO-220B(Non-Ins) 100 Tj=Tjmax 10 9 120 100 140 Tj=25℃ α=180° One cycle tp=10ms FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t (dI/dt < 50A/μs) tp(ms) 0.01 0.1 1 10 ITSM (A), I t (A s) -40 -20 0 20 40 60 80 100 120 140 IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 0.0 0.5 1.5 2.0 3.0 1.0 2.5 Tj(℃) IGT 100 1000 dI/dt IH&IL ITSM I t Ratings and Characteristics Curves TO-220C

Data Sheet N2049, Rev.-  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT151K -650R SCT151K -800R SCT151C-650R DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..