SCT1275CS SMCDIODE | Alldatasheet

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Technical content

Data Sheet N2046, Rev.A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT1275CS SCT1275CS 75A SCRs Circuit Diagram

Description

Characteristics Symbol Condition Max. Units Storage junction temperature range Tstg - -40-150 ℃ Operating junction temperature range Tj - -40-125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM - 1200 V Repetitive peak reverse voltage(Tj=25℃) VRRM - 1200 V Non repetitive surge peak Off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V RMS on-state current I(TRMS) TO-247S(TC=90℃) 75 A Non repetitive surge peak on-state current (tp=10ms) ITSM - 800 A I2t value for fusing (tp=10ms) I2t - 3200 A2s Critical rate of rise of on-state current (IG=2×IGT) dI/dt - 150 A/μs Peak gate current IGM - 4 A Average gate power dissipation PG(AV) - 1 W Peak gate power PGM - 5 W With high ability to withstand the shock loading of large current, SCT1275CS provide high dv/dt rate with high frequency noise immunity. Products are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. TO-247S

Data Sheet N2046, Rev.A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT1275CS Symbol Test Condition Value UnitMIN. TYP. MAX. IGT VD=12V RL=33Ω - - 70 mA VGT - - 1.3 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ 0.2 - - V IL IG=1.2IGT - - 150 mA IH IT=1A - - 120 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ 700 - - V/μs Electrical Characteristics(Tj=25℃ unless otherwise specified) Static Characteristics Symbol Condition Max. Units VTM ITM=100A tp=380μs,Tj=25℃ 1.5 V IDRM VD=VDRM VR=VRRM, Tj=25℃ 50 μA IRRM VD=VDRM VR=VRRM, Tj=125℃ 10 mA Thermal Resistances Symbol Condition Value Units Rth(j-c) Junction to case(AC) TO-247S 0.52 ℃/W

Ordering Information

SCT1275CS TO-247S 30pcs/ Tube S CT 12 75 CS SMC Diode Solutions SCRs CS:TO-247S 12:VDRM/VRRM ≥ 1200V IT(RMS):75A

Data Sheet N2046, Rev.A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT1275CS FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) 0 10 20 30 40 50 60 70 80 90 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 100 120 120 100 α=180° TO-247S Marking Diagram Mechanical Dimensions TO-247S SYMBOL Millimeters Inches A 15.1 16.1 0.594 0.634 B 19.8 20.8 0.78 0.819 C 13.8 14.8 0.543 0.583 D 3.00 4.00 0.118 0.157 E 2.75 3.35 0.108 0.132 F 1.30 1.50 0.051 0.059 G 5.10 5.80 0.201 0.228 H 4.50 5.50 0.177 0.217 J 1.45 2.15 0.057 0.085 K 1.90 2.80 0.075 0.110 L 0.55 0.80 0.022 0.031 P 2.00 2.40 0.079 0.094 Ratings and Characteristics Curves Where XXXXX is YYWWL SCT1275CS = Part name YY = Year WW = Week L = Lot Number

Data Sheet N2046, Rev.A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT1275CS FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics (maximum values) 1 10 100 1000 Number of cycles0 200 ITSM (A) ITM (A) VTM (V) 0 1 2 3 4 51 10400 600 800 1000 100 800 Tj=25℃Tj=125℃ One cycle tp=10ms FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t (dI/dt < 150A/μs) tp(ms) 0.01 0.1 1 10 100 ITSM (A), I t (A s) -40 -20 0 20 40 60 80 100 120 140 IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 0.0 0.5 1.5 2.0 3.0 1.0 2.5 Tj(℃) 10000 1000 20000 I t ITSM dI/dt IGT IH&IL

Data Sheet N2046, Rev.A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SCT1275CS DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..