SCT1216C

SCT1216C SMCDIODE | Alldatasheet

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Technical content

Data Sheet N2210, Rev.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SCT1216C SCT1216E SCT1216 Series 16A SCRs Circuit Diagram

Description

Maximum Ratings: Characteristics Symbol Condition Max. Units Storagejunctiontemperaturerange Tstg - -40-150 ℃ Operatingjunctiontemperaturerange Tj - -40-125 ℃ Repetitivepeakoff-statevoltage(Tj=25℃) VDRM - 1200 V Repetitivepeakreversevoltage(Tj=25℃) VRRM - 1200 V Averageon-statecurrent IT(AV) TO-220C(TC=105℃) TO-263(TC=85℃) 10 A RMS on-statecurrent I(TRMS) 16 A Nonrepetitivesurgepeakon-statecurrent (tp=10ms) ITSM - 200 A I2tvalueforfusing(tp=10ms) I2t - 200 A2s Criticalrateofriseofon-statecurrent (IG=2×IGT) dI/dt - 50 A/μs Peakgatecurrent IGM - 4 A Averagegatepowerdissipation PG(AV) - 1 W Peakgatepower PGM - 5 W With high ability to withstand the shock loading of large current, SCT1216 SCRs provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. TO-220C K(1) G(3) 123 TO-220A Insulated 123 TO-220B Non-Insulated TO-220F InsulatedTO-220C A(2) TO-263 123 123 1 3 TO-263

Data Sheet N2210, Rev.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SCT1216C SCT1216E Symbol Test Condition Value UnitMIN. TYP. MAX. IGT VD=12VRL=33Ω - - 40 mA VGT - - 1.3 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ 0.2 - - V IL IG=1.2IGT - - 90 mA IH IT=500mA - - 80 mA dV/dt VD=2/3VDRM GateOpenTj=125℃ 200 - - V/μs Electrical Characteristics(Tj=25℃ unlessotherwisespecified) Static Characteristics Symbol Condition Max. Units VTM IT=45Atp=380μs,Tj=25℃ 1.55 V IDRM VD=VDRM VR=VRRM,Tj=25℃ 10 μA IRRM VD=VDRM VR=VRRM,Tj=125℃ 4 mA Thermal Resistances Symbol Condition Value Units Rth(j-c) Junctiontocase(AC) TO-220C 0.85 ℃/W TO-263 1.9 ℃/W

Ordering Information

SCT1216C TO-220C 50pcs/Tube SCT1216E TO-263 800pcs/Tape SCT1216ETR TO-263 800pcs/Tape S CT 12 16C SMCDiodeSolutions SCRs C:TO-220C E:TO-263 12:VDRM/VRRM≥1200V IT(RMS):16A

Data Sheet N2210, Rev.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SCT1216C SCT1216E Marking Diagram SYMBO L Millimeters Inches A 4.40 4.60 0.173 0.181 B 0.70 0.90 0.028 0.035 C 0.45 0.60 0.018 0.024 C2 1.23 1.32 0.048 0.052 C3 2.20 2.60 0.087 0.102 D 8.90 9.90 0.350 0.390 E 9.90 10.3 0.39 0.406 F 6.30 6.90 0.248 0.272 G 2.54 0.1 H 28.0 29.8 1.102 1.173 L1 3.39 0.13 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 ϕ 3.6 0.14 Mechanical Dimensions TO-220C Mechanical Dimensions TO-263 SYMBOL Millimeters Inches A 9.90 10.20 0.390 0.402 A1 4.95 5.10 0.195 0.201 B 14.70 15.80 0.579 0.622 C 9.40 9.60 0.370 0.378 C1 4.70 4.80 0.185 0.189 D 2.54 0.100 D1 7.60 E 1.20 1.40 0.047 0.055 E1 7.20 F 0.75 0.85 0.029 0.033 G 1.75 0.069 H 4.40 4.70 0.173 0.185 J 2.30 2.70 0.091 0.106 K 0.38 0.55 0.015 0.022 L 0 0.10 0.25 0 0.004 0.010 L1 2.24 2.84 0.088 0.112 ΦP 1.00 1.50 0.039 0.059 M 1.25 1.35 0.049 0.053 WhereXXXXX isYYWWL SCT1216C =Part name YY =Year WW =Week L = Lot Number

Data Sheet N2210, Rev.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SCT1216C SCT1216E Foot Print TO-263 (dimensions in mm) Ratings and Characteristics Curves

Data Sheet N2210, Rev.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SCT1216C SCT1216E

Data Sheet N2210, Rev.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SCT1216C SCT1216E DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovided toanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..