SCT10N120AG STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 14
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 HiP247 package information
Features
- AEC-Q101 qualified
- Very tight variation of on-resistance vs. temperature
- Very high operating temperature capability (T J = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
Applications
- Motor drives
- EV chargers
- High voltage DC-DC converters
- Switch mode power supplies
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry- standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT10N120AG Product summary Order code SCT10N120AG Marking SCT10N120AG Package HiP247 Packing Tube Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package SCT10N120AG DS12509 - Rev 3 - September 2022 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width limited by safe operating area.
Table 2. Thermal data
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified). Table 3. On/off states
- Defined by design, not subject to production test.
Table 4. Dynamic Table 5. Switching energy (inductive load)
Electrical characteristics
Table 6. Switching times Table 7. Reverse SiC diode characteristics
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics (TJ= 25 °C) Figure 4. Output characteristics (TJ= 150 °C)
3 Test circuits
Figure 21. Switching test waveforms for transition times Figure 22. Clamped inductive switching waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 HiP247 package information
Figure 23. HiP247 package outline
Package information
DS12509 - Rev 3 page 10/14
Table 8. HiP247 package mechanical data
Revision history
Table 9. Document revision history 01-Mar-2019 2 Updated Table 3. On/off states. Updated package information. Updated Section 4.1 HiP247 package information.
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