SCT10N120 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 HiP247™ package information
  • 5 Revision history

Features

 Very tight variation of on-resistance vs. temperature  Slight variation of switching losses vs. temperature  Very high operating temperature capability (TJ=200 °C)  Very fast and robust intrinsic body diode  Low capacitance

Applications

 Solar inverters, UPS  Motor drives  High voltage DC-DC converters  Switch mode power supplies

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high- efficiency and high power density applications. Table 1: Device summary Order code Marking Package Packaging SCT10N120 SCT10N120 HiP247™ Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”. See Section 6: "Package information". HiP247 AM01475v1_Tab D(2, TAB) G(1) S(3)

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V ID Drain current (continuous) at TC = 25 °C 12 A ID Drain current (continuous) at TC = 100 °C 10 A IDM (1) Drain current (pulsed) 24 A PTOT Total dissipation at TC = 25 °C 150 W Tstg Storage temperature range -55 to 200 Tj Operating junction temperature range °C Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.17 °C/W Rthj-amb Thermal resistance junction-ambient max 40 °C/W

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified). Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 1200 V IDSS Zero gate voltage drain current VDS = 1200 V, VGS = 0 V 10 µA VDS = 1200 V, VGS = 0 V, TJ = 200 °C (1) 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1.8 3.5 V RDS(on) Static drain-source on-resistance VGS = 20 V, ID = 6 A 500 690 mΩ VGS = 20 V, ID = 6 A, TJ = 150 °C 520 mΩ VGS = 20 V, ID = 6 A, TJ = 200 °C 580 mΩ Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 400 V, f = 1 MHz, VGS = 0 V - 290 - pF Coss Output capacitance - 30 - pF Crss Reverse transfer capacitance - 9 - pF Qg Total gate charge VDD = 800 V, ID = 6 A, VGS = 0 to 20 V - 22 - nC Qgs Gate-source charge - 3 - nC Qgd Gate-drain charge - 10 - nC Rg Gate input resistance f=1 MHz, ID=0 A - 8 - Ω Table 6: Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon Turn-on switching energy VDD = 800 V, ID = 6 A RG= 10 Ω, VGS = -5 to 20 V - 90 - µJ Eoff Turn-off switching energy - 30 - µJ Eon Turn-on switching energy VDD = 800 V, ID = 6 A RG= 10 Ω, VGS = -5 to 20 V TJ= 150 °C - 104 - µJ Eoff Turn-off switching energy - 33 - µJ

Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 800 V, ID = 6 A, RG = 10 Ω, VGS = -5 to 20 V - 7 - ns tf Fall time - 17 - ns td(off) Turn-off delay time - 14 - ns tr Rise time - 12 - ns Table 8: Reverse SiC diode characteristics Symbol Parameter Test conditions Min Typ. Max Unit VSD Diode forward voltage IF = 6 A, VGS = 0 V - 4.3 - V trr Reverse recovery time ISD = 6 A, di/dt = 2000 A/µs VDD = 800 V, TJ=150 °C - 16 - ns Qrr Reverse recovery charge - 107 - nC IRRM Reverse recovery current - 12 - A

2.2 Electrical characteristics (curves)

Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics (TJ= 25 °C) Figure 5: Output characteristics (TJ= 150 °C) Figure 6: Output characteristics (TJ= 200 °C) Figure 7: Transfer characteristics

3 Test circuits

Figure 22: Switching test waveforms for transition times Figure 23: Clamped inductive switching waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 HiP247™ package information

Figure 24: HiP247™ package outline

Table 9: HiP247™ package mechanical data Dim. mm. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70

5 Revision history

Table 10: Document revision history Date Revision Changes 23-Feb-2016 1 First release 23-May-2016 2 Modified: title, features and Figure 1: "Internal schematic diagram" in cover page Modified: Table 2: "Absolute maximum ratings" and Table 3: "Thermal data" Modified: Table 4: "On/off states", Table 5: "Dynamic", Table 6: "Switching energy (inductive load)", Table 7: "Switching times" and Table 8: "Reverse SiC diode characteristics" Added: Section 4.1: "Electrical characteristics (curves)" Minor text changes