SCT1000N170 STM | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 11
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Package information
- 3.1 HiP247 package information
Features
Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7 A
- High speed switching performance
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (T J = 200 °C)
Applications
- Auxiliary power supply for server
- Switch mode power supply
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT1000N170 Product summary Order code SCT1000N170 Marking SCT1000N170 Package HiP247 Packing Tube Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package SCT1000N170 Datasheet DS11177 - Rev 5 - April 2021 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings Pulse width is limited by safe operating area. Table 2. Thermal data
2 Electrical characteristics
TC = 25 °C unless otherwise specified. T able 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 1700 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 1700 V 10 µA IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA 2.1 3.5 V RDS(on) Static drain-source on-resistance VGS = 20 V, ID = 3 A 1.0 1.3 ΩVGS = 20 V, ID = 3 A, TJ = 150 °C 1.27 VGS = 20 V, ID = 3 A, TJ = 200 °C 1.66 Table 4. Dynamic Table 5. Switching energy (inductive load) Table 6. Reverse SiC diode characteristics
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. T ypical output characteristics (T J = 25 °C) Figure 4. T ypical output characteristics (T J = 200 °C) Figure 5. T ypical transfer characteristics Figure 6. T otal power dissipation
3 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
3.1 HiP247 package information
Figure 18. HiP247 package outline
Package information
Table 7. HiP247 package mechanical data
Revision history
Table 8. Document revision history 29-Jul-2015 1 First release. Updated title and features on cover page. Updated Section 1: "Electrical ratings" and Section 2: "Electrical characteristics". Updated Section 1 Electrical ratings. Updated Section 2 Electrical characteristics. Updated Section 2.1 Electrical characteristics (curves). Updated Section 3.1 HiP247 package. Updated title and Features in cover page. Updated Table 2. Thermal data. Updated Table 3. On/off states. Updated Section 3 Package information. Updated Features in cover page. Updated Table 1. Absolute maximum ratings. Updated Table 3. On/off states.