SCT020H120G3AG STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Package information
  • 3.1 H²PAK-7 package information
  • 3.2 Packing information

Features

Order code VDS RDS(on) typ. ID SCT020H120G3AG 1200 V 18.5 mΩ 100 A

  • AEC-Q101 qualified
  • Very low R DS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Source sensing pin for increased efficiency

Applications

  • Main inverter (electric traction)
  • DC/DC converter for EV/HEV
  • On board charger (OBC)

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Product status link SCT020H120G3AG Product summary Order code SCT020H120G3AG Marking 20H120G3AG Package H²PAK-7 Packing Tape and reel Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package SCT020H120G3AG Datasheet DS14043 - Rev 1 - September 2022 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. I D is limited by package.
  2. Pulse width is limited by safe operating area.

Table 2. Thermal data

2 Electrical characteristics

TC = 25 °C unless otherwise specified. Table 3. On/off states Table 4. Dynamic Table 5. Switching energy (inductive load) Table 6. Switching times

Electrical characteristics

Table 7. Reverse SiC diode characteristics

  1. I SD is limited by package.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics (TJ = 25 °C) Figure 4. Typical output characteristics (TJ = 175 °C) Figure 5. Typical transfer characteristics Figure 6. Total power dissipation

3 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

3.1 H²PAK-7 package information

Figure 18. H²PAK-7 package outline

Package information

Table 8. H²PAK-7 package mechanical data Figure 19. H²PAK-7 recommended footprint

3.2 Packing information

Figure 20. Tape outline Figure 21. Reel outline

Table 9. Tape and reel mechanical data

Revision history

Table 10. Document revision history 27-Sep-2022 1 First release.

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