SCT018W65G3-4AG STM | Alldatasheet

Document overview

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  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Package information
  • 3.1 HiP247-4 package information

Features

Order code VDS RDS(on) typ. ID SCT018W65G3-4AG 650 V 20 mΩ 55 A

  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Source sensing pin for increased efficiency

Applications

  • Main inverter (electric traction)
  • DC/DC converter for EV/HEV
  • On board charger (OBC)

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. 2 34 HiP247-4 Drain(1, TAB) Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4 Product status link SCT018W65G3-4AG Product summary Order code SCT018W65G3-4AG Marking 18W65G34AG Package HiP247-4 Packing Tube Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247-4 package SCT018W65G3-4AG Datasheet DS14567 - Rev 1 - January 2024 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. ID is limited by package.
  2. Pulse width is limited by safe operating area.

Table 2. Thermal data

2 Electrical characteristics

TC = 25 °C unless otherwise specified. Table 3. On/off states Table 4. Dynamic Table 5. Switching energy (inductive load) Table 6. Switching times

Electrical characteristics

Table 7. Reverse SiC diode characteristics

  1. ISD is limited by package.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics (TJ = 25 °C) Figure 4. Typical output characteristics (TJ = 200 °C) Figure 5. Typical transfer characteristics Figure 6. Total power dissipation

3 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

3.1 HiP247-4 package information

Figure 18. HiP247-4 package outline

Package information

Table 8. HiP247-4 mechanical data

Revision history

Table 9. Document revision history 09-Jan-2024 1 First release.

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