SCT016H120G3AG STM | Alldatasheet
Document overview
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- PDF pages: 14
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Package information
- 3.1 H²PAK-7 package information
- 3.2 Packing information
Features
Order code VDS RDS(on) typ. ID SCT016H120G3AG 1200 V 16 mΩ 112 A
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency
Applications
- DC/DC converter for EV/HEV
- Main inverter (electric traction)
- On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. TAB H2PAK-7 Drain (TAB) Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Product status link SCT016H120G3AG Product summary Order code SCT016H120G3AG Marking 16H120G3AG Package H²PAK-7 Packing Tape and reel Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mΩ typ., 112 A in an H²PAK-7 package SCT016H120G3AG Datasheet DS14578 - Rev 2 - November 2024 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Limited by bonding wires.
- Pulse width is limited by safe operating area.
Table 2. Thermal data
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 3. On/off states Table 4. Dynamic Table 5. Switching energy (inductive load) Table 6. Switching times
Electrical characteristics
Table 7. Reverse SiC diode characteristics
- Limited by bonding wires.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics (TJ = 25 °C) Figure 4. Typical output characteristics (TJ = 175 °C) Figure 5. Typical transfer characteristics Figure 6. Total power dissipation
3 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
3.1 H²PAK-7 package information
Figure 19. H²PAK-7 package outline
Package information
Table 8. H²PAK-7 package mechanical data Figure 20. H²PAK-7 recommended footprint
3.2 Packing information
Figure 21. Tape outline Figure 22. Reel outline DS14578 - Rev 2 page 10/14
Table 9. Tape and reel mechanical data DS14578 - Rev 2 page 11/14
Revision history
Table 10. Document revision history 29-Feb-2024 1 First release. Added Figure 13. Maximum continuous drain current vs case temperature.
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