SCT015W120G3-4AG STM | Alldatasheet
Document overview
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- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Package information
- 3.1 HiP247-4 package information
Features
Order code VDS RDS(on) typ. ID SCT015W120G3-4AG 1200 V 15 mΩ 129 A
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. 2 34 HiP247-4 Drain(1, TAB) Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4 Product status link SCT015W120G3-4AG Product summary Order code SCT015W120G3-4AG Marking 015W120G34AG Package HiP247-4 Packing Tube Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package SCT015W120G3-4AG Datasheet DS14307 - Rev 2 - December 2023 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- ID is limited by package.
- Pulse width is limited by safe operating area.
Table 2. Thermal data
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 3. On/off states Table 4. Dynamic Table 5. Switching energy (inductive load) Table 6. Switching times
Electrical characteristics
Table 7. Reverse SiC diode characteristics
- ISD is limited by package.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics (TJ = 25 °C) Figure 4. Typical output characteristics (TJ = 200 °C) Figure 5. Typical transfer characteristics Figure 6. Total power dissipation
3 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
3.1 HiP247-4 package information
Figure 17. HiP247-4 package outline
Package information
Table 8. HiP247-4 mechanical data
Revision history
Table 9. Document revision history 16-May-2023 1 First release. 06-Dec-2023 2 Updated Table 3. On/off states.
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