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0.2 A, 40 V

Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente 08-Dec-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Anode Cathode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

  • Low turn-on voltage
  • Fast switching
  • PN junction guard for transient and ESD protection
  • Designed for surface mount application
  • Plastic material-UL recognition flammability classification 94V-O APPLICATION
  • Surface mount fast switching diode

PACKAGE INFORMATION

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single diode at TA = 25°C) Parameter Symbol Limits Unit Peak repetitive peak reverse voltage V RRM 40 V Working peak reverse voltage V RWM 40 V DC reverse voltage V R 40 V Forward continuous current I F 200 mA Peak forward surge current @ < 1.0 s I FSM 600 mA Power Dissipation P d 200 mW Thermal resistance junction to ambient R θJA 625 ℃ / W Junction, Storage Temperature Range T J, TSTG -55 ~ +125 ℃ ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions Reverse Breakdown Voltage V (BR)R 40 - - V I R= 10A Forward Voltage V F - - 0.38 V IF = 1.0mA - - 0.5 I F = 10mA - - 1.0 I F = 40mA Reverse Current I R - 20 200 nA V R = 30V Capacitance between terminals C T - 4 5 pF V R = 0V, f=1.0MHz Reverse Recovery Time T RR - - 5 ns IF =IR= 10mA, RL=100Ω Product Marking Code SCS0240DF 43 DFN1006-2 C A B E D H F FG REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 0.55 0.675 E 0.20 0.30 B 0.95 1.075 F 0.05REF C 0.47 0.53 G 0.45 0.55 D 0 0.05 H 0.65TYP

Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente 08-Dec-2010 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES