SCN8031HCCN40 PHILIPS | Alldatasheet
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Philips Semiconductors Microcontroller Products Product specification Single-chip 8-bit microcontroller 8031AH/8051AH DESCRIPTION FEATURES PIN CONFIGURATIONS The Philips BO31AH/S0S1AH isa © Reduced supply current high-performance microcontroller fabricated with Philips high-density highly reliable +5V, © 4k x 8 ROM (8051AH) Prof] [FA vec depletiontoad, N-channel, siicon-gate, N50Og , RAM MOS process technology. It provides the 28x8 a Ed [59] Po.oDo hardware features, architectural © Four 8-bit ports, 32 VO lines Praia] [33] Po.1ap1 enhancements and instructions that are + p necessary to make it powerkl and ‘© Two 16-bit timer/event counters 13[4] [37] Pozane cost-effective controller for applications © High-performance full-duplex serial pra[sl [26] Po.saps requiring up to 64k bytes of program memory channel Pisfé] [35] Po.a/aDs f data . andlor up to 64k bytes of data storage © Extemal memory expandable to 128k Pre] [34 Posvaps The 8051AH contains a 4k x 8 read-only P17] PO.@ADS Program memory, a 128 x 8 read-only data ‘© Boolean processor Le g memory, 32 V/O lines, two 16-bit © Industry standard 8051 architecture: rsr[ol ¢ fur counterfimers, a five-source, two-priority Non-paged j romaoid Pot? fa] ex level nested interrupt structure, a serial YO ~ Non-paged jumps reoraift] ANNE. Fy we Port for either multi-processor ~ Direct addressing : CKAGI communications, 1/0 expansion or full duplex — Four 8-ragister banks Wrors.2[1q [23] PSEN : UART, and on-chip oscillator and clock ~ Stack depth up to 128-bytes NTPs. [19 [23] P2.7a15, Circuits. The 8O31AH is identical, except that _ Muti bt itlacks the program memory. For systems luttiply, divide, subtract, compare tors.a[id [2] Pawar that require extra capability, the 8051AH can © Most instructions execute in 1s Tieasiig [23 Pasars be expanded using standard TTL compatible e Iti ivi Wrese[ia [25] P2waiz memories and byte oriented peripheral 4s multiply and divide controllers, FOPs.7[17] [24] Pavan The 8051AH microcontroller, lke its 8048 rene Ld B Pazaro predecessor, is efficient both as a controller xvas [id [22] Peng and as an arithmetic processor. It has Vss [24 [23] P2awas extensive facilities for binary and BCD arithmetic and excels in bit-handiing capabilities. Efficient use of program memory results from an instruction set consisting of 44% one-byte, 41% two-byte, and 15% mf? be three-byte instructions. With a 12MHz crystal, pusne 58% of the instructions execute in tps, 40% LEADED in 2us and multiply and divide require only CARAIER os vq b20 LOGIC SYMBOL Pin Function Pin Function Pin Function
1 NC 18 IRTVP33 30 P2e/A14
vu Vs 2 PIO 16 TOPS4 31 P27/A1S ‘ha Wee SEY XA bad 5 P13 19 FOP37 34 NC = poms hat S Bie ° ADDRESS AND , 5 gas ponte Sre Bie y reas —_ 10 RST 24 P2OAB (39 PO.WADE . > 11 RxOP30 25 P2.1/A9 40 POVADS. . XTALZ 12 NC 26 P22/A10 41 POZAD2 = 13° TxOP3.1 27 P2YAI1 42 (POT/ADI 14 INTOP32 28 P2wAt2 43 -PO.WADO - 29 P2SA3 44 Voc RST a 5 PSER ALE. RO Th > RO rand z| A 5 5- ‘ADDRESS BUS Tie => Whe— _ F< = December 29, 1992 1257 853-0096 08603
Philips Semiconductors Microcontroller Products Product specification SSS OUT sPOCIRCAtION Single-chip 8-bit microcontroller 8031AH/8051AH SSS PART NUMBER SELECTION ROMiess ROMiess TEMPERATURE (MARKING (ORDER °c DRAWIN NUMBER) NUMBER) AND PACKAGE NUMBER MAF8031AH-2-12P | MAF8031A-2N | MAFBOS1AH-2P | SCN8031HACN40 | SCNBO51HACN40 | 40 to +85, Plastic Dual In-Line Package MABB031AH-2-12P | MAB8031A-2N | MABBO51AH-2P | SCNB031HCCN40 | SCN8051HCCN40 0to +70, Plastic Dual In-Line Package SCN8031HCFN40 | SCN80S1HCFN4O 0 to +70, 0415C Plastic Dual In-Line Package SCN8031HAFN40 | SCNBOS1HAFN40 | 40 to +85, Plastic Dual In-Line Package MABB031AH-2-12WP | MAB8031A-2 A | MABS051AH-2WP | SCN8O31HCCA44 | SCNB051HCCA44 0 to +70, Plastic Leaded Chip Carrier MAF8031AH-2-12WP | MAF8031A-2A | MAFBOS1AH-2WP | SCN8031HACA44 | SCNBOS1HACA44 | 40 to +85, Plastic Leaded Chip Cartier SCNB031HCFA44 | SCN8051HCFA44 0 to +70, Plastic Leaded Chip Carrier SCN8031HAFA44 | SCNBOS1HAFA44 | 40 to +85, Plastic Leaded Chip Carrier December 29, 1992 1258
Philips Semiconductors Microcontroller Products Product specification Phils Semiconductors MicreontrolerProducts Product spociication Single-chip 8-bit microcontroller 8031AH/8051AH a BLOCK DIAGRAM PO0.0-PO.7 P20-P2.7 FEE EE SO ! ” wa | = ! Vss| i} Ly [psae—_ | [rom] | if ff = G ! iv U { | ! [= | ! | I) \\ PROGRAM | <a ! | | ' lL, J | ' Ras cool \\ [Pro [no [mm | | ; U er | | z= [——[seoe[ = |e J of, fF | | | | | i PSEN: i} eel =H KX CONTROL as ge ij if | 1 *] | ‘fe=] ! OTA mae IE io P1.O-P1.7 P3.0-P3.7 December 29, 1992 1259
Philips Semiconductors Microcontroller Products. Product specification ——— Oreo Single-chip 8-bit microcontroller 8031AH/8051AH See PIN DESCRIPTIONS hncnowe [oF Vss 20 | 22 1 | Ground: OV reference. Vee 40 | 44 |_| Power Supply: This is the power supply voltage for normal, idle, and power-down operation. P0.0-0.7 39-32 | 43-36 | VO | Port 0: Port 0 is an open-drain, bidirectional 1/O port. Port 0 pins that have 1s written to them float and can be used as high-impedance inputs. Port 0 is also the multiplexed low-order address and data bus during accesses to extemal program and data memory. In this application, it uses strong internal pull-ups when emitting 1s. : P1.0-P1.7 | 1-8 | 2-9 | VO | Port 1: Port 1 is an 8-bit bidirectional /O port with intemal pull-ups. Port 1 pins that have 1s written to them are pulled high by the internal pull-ups and can be used as inputs. As inputs, port 1 pins that are externally pulled low will source current because of the intemal pull-ups. (See DC Electrical Characteristics: I). P2.0-P2.7 | 21-28 | 24-31] VO | Port 2: Port 2 is an 8-bit bidirectional I/O port with intemal pull-ups. Port 2 pins that have 1s written to them are pulled high by the internal pull-ups and can be used as inputs. As inputs, port 2 pins that are extemally being pulled low will source current because of the intemal pull-ups. (See DC Electrical Characteristics: Ij_). Port 2 emits the high-order address byte during fetches from ‘extemal program memory and during accesses to external data memory that use 16-bit addresses (MOVX @DPTR). In this application, it uses strong intemal pull-ups when emitting 18. During y accesses to extemal data memory that use 8-bit addresses (MOV @Rii), port 2 emits the contents ; of the P2 special function register. P3.0-P3.7 10-17] 11, YO | Port 3: Port 3 is an 8-bit bidirectional /O port with intemal pull-ups. Port 3 pins that have 1s written 13-19 to them are pulled high by the internal pull-ups and can be used as inputs. As inputs, port 3 pins that are externally being pulled low will source current because of the pull-ups. (See DC Electrical Characteristics: Ii,). Port 3 also serves the special features of the 80C51 family, as listed below: 10 W ' RxD (P3.0): Serial input port ah] 13 O = | TxD (P3.1): Serial output port 12 4 1 | INTO (P3.2): External interrupt 13 15 1 J INTT (P3.3): External interrupt 14 16 1 | TO (P3.4): Timer 0 external input 15 7 1 | T1(P3.5): Timer 1 external input 16 18 © | WH (P3.6): External data memory write strobe 17 19 © | RD (P3.7): Extemal data memory read strobe RST 9 10 1 | Reset: A high on this pin for two machine cycles while the oscillator is running, resets the device. An internal diffused resistor to Vgs permits a power-on reset using only an extemal capacitor to Veo: ALE 3 3 VO | Address Latch Enable: Output pulse for latching the low byte of the address during an access to external memory. In normal operation, ALE is emitted at a constant rate of 1/6 the oscillator frequency, and can be used for external timing or clocking. Note that one ALE pulse is skipped during each access to external data memory. PSEN 29 | 32 © | Program Store Enable: The read strobe to external program memory. When the device is executing code from the extemal program memory, is activated twice each machine eee ‘except that two PSEN activations are skipped during each access to extemal data memory. is not activated during fetches from intemal program memory. EK 3 35 ' External Access Enable: EA must be externally held low to enable the device to fetch code from ‘extemal program memory locations 0000H to OFFFH. If EA is held high, the device executes from . internal program memory unless the program counter contains an address greater than OFFFH. XTAL1 19 21 1 | Crystal 1: Input to the inverting oscillator amplifier. XTAL2 18 20 © | Crystal 2: Output from the inverting oscillator amplifier and input to the internal clock generator circuits, OSCILLATOR To drive the device from an extemal clock high and low times specified in the data sheet CHARACTERISTICS source, XTAL2 should be driven while XTAL1 must be observed. XTAL1 and XTAL2 are the input and output, parieneiee eine There ore re xt mal respectively, of aninverting amplifier. The = FOGurer oe ie ole extemal DESIGN CONSIDERATIONS clock signal, because the input to the intemal pins can be configured for use as an on-chip 4 circuitry is through a divide: by two ‘At power-on, the voltage on Vc and RST oscillator, as shown in the logic symbol. flip-flop. However, minimum and maximum sree come up at the same time for a proper December 29, 1992 1260
Philips Semiconductors Microcontroller Products Product specification —}— Single-chip 8-bit microcontroller 8031AH/8051AH ABSOLUTE MAXIMUM RATINGS! 2.3 [____panaweren SS nat [oT ] Storage temperature range Input, output current on any single pin ee ee [Powerdissipaton to . DC ELECTRICAL CHARACTERISTICS Tamb = 0°C to +70°C, Voc = 5V 10%, Vgg = OV4'S SYMBOL PARAMETER CONDITIONS [ mn | max | ipl age eS ce Ce [ws ___[Imputhighcurentio ASTforreset_ | VwsVoo=tsv [soo Power supply current All outputs disconnected and EA = Voc a a SYMBOL PARAMETER CONDITIONS | min | MAX | Power supply current All outputs disconnected and EK = Vcc NOTES: 1, Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional gperation of the device at these or any conditions other than those described in the AC and DC Electrical Characteristics section of this specification is not implied. 2. For operating at elevated temperatures, the device must be derated based on +150°C maximum junction temperature. 3. This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima. 4. Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to Vs unless otherwise noted. 5. All voltage measurements are referenced to ground. For testing, all input signals swing between 0.45V and 2.4V with a transition time of appropriate. 6. Vo, is derated when the device rapidly discharges extemal capacitance. This AC noise Is most pronounced during emission of address data. When using extemal memory, locate the latch or buffer as close as possible to the device. Emitting Degraded Datum Ports VO Lines Vou (Peak Max) Address P2, PO P1,P3 0.8V Write Data PO Pt, p3, ALE 0.8V 7. CL = 100pF for port 0, ALE and PSEN outputs: C, = 80pF for all other ports. December 29, 1992 1261
Philips Semiconductors Microcontroller Products Product specification Product specification Single-chip 8-bit microcontroller 8031AH/8051AH SSS AC ELECTRICAL CHARACTERISTICS Tamb = 0°C to +70°C oF 40°C to +85°C, Voc = SV +20%, Vgg = OV1:2 Fe SCN8051/31 c 2, MAB8051/31 2 120° MAF8051/31 -2 12 'SCN8051/31 F 15 fou [tae pasewan a da fd [wa [1 [acaressvaisiontemw | | two | OCP fu [1 [asieosstoisateratcion | | | ass | +d | uw [4 |aetewieveiainasionn | as | «dt ato me | fun [+ [Aetowwrseniew ef eee | fun [1 [PEN pusewim | as || es | Pe [iw [+ [PSeWiowiovaisrainctonn || ts | ta |e fix [1 [irptnerectonnosanerrsen |e | | oe | +d | fone [1 [irputinswoctontoaanerPsen [es | Cd) || Ca NO [wuz [1 [PaERiewioadsronstoet || | CT Sd] few [+ |PseNoadiessvaia Ts [dP es | dT [DeteMemory TT OOOCOCCSC“‘S fren [2.3 [ROpusewan mo eo Cd [imo [2.3 |WRpucewim | ato || too | dC Ea [wwex [2.8 [oaareiarerto ef ed [woz [29 [osatosterernd || w|i | fue [23 [at bowewisanain Pa Pid nes | [wow [2.8 [acsresiovaiddowin oes Pd tes | | um [2.8 [ActowieRGorwmiow | 200 [00 | Saas | Saosso | [we [2.8 [acsrssvatdiowhiow arrow a8 [| ano | |e [owe [2.3 [Daiavaicemrvansiin [a | | meso | dT fcwm [2.3 [oaavaicowmnn | we [| neo | dT [wen [2.8 [Daahadatorwm we || es | Cd [wuz [2.8 [Foiowioadiosstot TS | wm | Cm wan [2.8 [ROorWanoheAtenem | | es | ao | Gano | [Externe Clock SCS*SY feex [S[rgnine me Ud hU)CSrSC Ca a OO ace [5 [isotme dC mTC~*dSC“‘(‘amdC a (A BO 1 Pascenetors are valid over operating temperature range unless otherwise specified. 2, Load capacitance for port 0, ALE, and PSEN = 100pF, load capacitance for all other outputs = B0pF. December 29, 1992 1262
Figure 3. External Data Memory Write Cycle