SCM40N120PCT GWSEMI | Alldatasheet

Document overview

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Technical content

Features

 Low on-resis tance RDS(on)  Best thermal conductivity and behavior  High speed switching  High robustness of dv/dt  Low capacitances and low gate charge  Low gate resistance for high -frequency switching  Easy to parallel  Halogen Free, R oHS C ompliant

Applications

 Switchi ng mode power supply  PV inverter  Uninterruptibl e Power Su pply  Motor Drives  DC/DC c onverters  EV charging TO-247 Circuit Diagram *1: Gate Drain Source Body Diode 1 *1 Absolute Maximum Rating (Ta = 25°C) Symbol Parameter Value Unit VDSS Drain -Source voltage 1200 V VGSS Gate -Source voltage (DC) -4 to 20 V ID Continuou s Drain Current 55 A Tj Junction temperature 175 °C TSTG Storage temperature -55/+175 °C PD Powe r diss ipation 288 W Thermal characterist ics Symbol Parameter Typ. Typ. Units Rth (JC) Thermal r esis tance, junc tion-case 0.4 0.52 °C /W

Electrical Characteristics (Ta = 25 °C) Symbol Parameter Min. Typ. Max. Units Test Con dition V(BR) DSS Drain -Source breakdown vo ltage 1200 - - V VGS = 0V, ID=250uA IDSS Zero gate voltage drain c urrent - 2.8 5.6 - uA VDS=1200 V, VGS = 0V,Tj= 25 °C VDS=1200 V, VGS = 0V,Tj=150 °C RDS(on) Drain -Source on-state resistance mΩ VGS = 18V, ID =27.5A, Tj= 25 °C VGS = 18V, ID =27.5A, Tj= 125°C VGS(th) Gate threshold voltage 2.0 - 3.0 V VDS = 10V, ID = 5 mA IGSS+ Gate-Source leakage current - - 100 nA VGD = 20V, VDS = 0V IGSS- Gate-Source leakage current - - -100 nA VGD = -4V, VDS = 0V RG Gate resistance - 4.0 - Ω f = 1MHz, open drain SCM40N120PCT Electrical C haracteristics (Ta = 25 °C) Symbol Parameter Min. Typ. Max. Units Test Condition Ciss Input capacitance - 2600 - pF VGS = 0V, VDS = 800V, f = 1MHz Coss Output capacitance - 100 - pF Crss Reverse capacitance - 16 - pF Qg Total gate charge - 150 - nC VDD = 600V ID = 27.5A VGS = 18V Qgs Gate to source charge - 23 - nC Qgd Gate to drain charge - 68 - nC Body diode Electrical Characteristics ( Ta = 25 °C) Symbol Parame ter Min. Typ. Max. Units Test Condition IS Body diode contin uous, forward current - - 55 A VSD Diode forward voltage - 4 - V VGS = 0V, IS = 27.5A

Typical Output Characteristics (I) Typical Output Charac teristics (II) Typical Output C haracteristics (III) Ta =150ºC Typical Output Characteristics (IV) Ta =150ºC Typical Transfer Characteristics (I) Typical Capaci tance vs. Drain – Source Voltage Static Drain - Source On - State Resistance vs. Junction Temperature Gate Threshold Volta ge vs. Junction Tem perature

Swit ching Time Measurement Circuit Switching W aveform Gate Charge Measu rement Circuit Gate Charge Waveform Reverse Re covery Time Measurement Circuit Reverse Re covery Tim e Waveform SCM40N120PCT

Symbol Dimensions In Millimeters Symbol Dimensions In Millimeters b2 1.91 2.00 2.39 e 5.44BSC TO-247 PACKAGE OUTLINE