SCM1270MF SANKEN | Alldatasheet
Document overview
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- PDF pages: 53
Technical content
Datasheet sections
Features
- Temperature Sensing Function
- In Case of Abnormal Operaion , All Ou tputs Shut Down via the FO1, FO3, and SD Pins Connected Together
- Built-in Bootstrap Diodes with Current Limiting Resistors (22 Ω)
- CMOS-compatible Input (3.3 V or 5 V)
- Bare Lead Frame: Pb-free (RoHS Compliant)
- Isolation Voltage: 2500 V (for 1 min) UL-recognized Component (File No.: E118037)
- Fault Signal Output at Protection Activation
- Protections Include: Undervoltage Lockout for Power Supply High -side (UVLO_VB): Auto-restart Low -side (UVLO_VCC): Auto-restart Overcurrent Protection (OCP): Auto-restart Simultaneous On-state Prevention: Auto-restart Typical Application VCC MIC1 VB1 FO1 OCP1 LIN1 COM1 HIN1 VCC1 HS1 VBB W LS3 V LS2 U LS1 Controller INT COM VB2 SD VT LIN2 COM2 HIN2 VCC2 HS2 VB3 FO3 OCP3 LIN3 COM3 HIN3 VCC3 HS3 VFO MIC2 MIC3 A/D M VDC LIN1 HIN1 LIN2 HIN2 LIN3 HIN3 RFO CFO CBOOT1 CBOOT2 CBOOT3 RSDRS RO CO U1 SCM1270MF Series Controller power supply DZVT Thermal RVT Package DIP33 Pin Pitch: 1.27 mm Mold Dimensions: 47 mm × 19 mm × 4.4 mm Not to scale Selection Guide
- Power Device: IGBT + FRD (600 V) IO Part Number
10 A SCM1271MF
15 A SCM1272MF
20 A SCM1274MF
30 A SCM1276MF
Applications
For motor drives such as:
- Refrigerator Compressor Motor
- Air Conditioner Compressor Motor
- Washing Machine Main Motor
- Fan Motor
- Pump Motor
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 3 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 4 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 1. Absolute Maximum Ratings Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming out of the IC (sourcing) is negative current (−). Unless specifically noted, TA = 25 °C. Parameter Symbol Conditions Rating Unit Remarks Main Supply Voltage (DC) VDC VBB–LSx 450 V Main Supply Voltage (Surge) VDC(SURGE) VBB–LSx 500 V IGBT Breakdown Voltage VCES VCC = 15 V, IC = 1 mA, VIN = 0 V 600 V Logic Supply Voltage VCC VCCx–COMx 20 V VBS VBx–HSx 20 Output Current(1) IO TC = 25 °C A SCM1271MF
15 SCM1272MF
20 SCM1274MF
30 SCM1276MF
Output Current (Pulse) IOP TC = 25 °C, PW ≤ 1ms, single pulse A SCM1271MF
30 SCM1272MF
45 SCM1276MF
Input Voltage VIN HINx–COMx, LINx–COMx −0.5 to 7 V FO Pin Voltage VFO FO1–COM1, FO3–COM3 −0.5 to 7 V SD Pin Voltage VSD SD–COM2 −0.5 to 7 V OCP Pin Voltage VOCP OCP1–COM1, OCP3–COM3 −10 to 5 V Operating Case Temperature(2) TC(OP) −30 to 100 °C Junction Temperature(3) Tj 150 °C Storage Temperature Tstg −40 to 150 °C Isolation Voltage(4) VISO(RMS) Between surface of heatsink side and each pin; AC, 60 Hz, 1 min 2500 V (1) Should be derated depending on an actual case temperature. See Section 15.4. (2) Refers to a case temperature measured during IC operation. (3) Refers to the junction temperature of each chip built in the IC, including the monolithic ICs (MICs), transistors, and freewheeling diodes. (4) Refers to voltage conditions to be applied between the case and all pins. All pins have to be shorted.
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 5 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 2. Recommended Operating Conditions Parameter Symbol Conditions Min. Typ. Max. Unit Remarks Main Supply Voltage VDC COM1 = COM2 = COM3, VBB–COM — 300 400 V Logic Supply Voltage VCC VCCx–COMx 13.5 — 16.5 V VBS VBx–HSx 13.5 — 16.5 V Input Voltage (HINx, LINx, FOx, and SD) VIN 0 — 5.5 V Minimum Input Pulse Width tIN(MIN)ON 0.5 — — μs tIN(MIN)OFF 0.5 — — μs Dead Time of Input Signal tDEAD 1.5 — — μs FO Pin Pull-up Resistor RFO 1 — 22 kΩ FO Pin Pull-up Voltage VFO 3.0 — 5.5 V FO Pin Noise Filter Capacitor CFO — — 1000 pF VT Pin Pull-down Resistor RVT 10 — — kΩ Bootstrap Capacitor CBOOT 10 — 220 μF Shunt Resistor RS IP ≤ 45 A 12 — — mΩ SCM1276MF IP ≤ 30 A 18 — — SCM1272MF SCM1274MF IP ≤ 20 A 27 — — SCM1271MF RC Filter Resistor RO * — — 100 Ω RC Filter Capacitor CO * — — 8200 pF PWM Carrier Frequency fC — — 20 kHz * Requires the time constants that satisfy the following equation (see also Section 12.4.4): RO × CO < 0.82 µs .
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 6 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 3. Electrical Characteristics Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming out of the IC (sourcing) is negative current (−). Unless otherwise specified, TA = 25 °C, VCC = 15 V. 3.1. Characteristics of Control Parts Parameter Symbol Conditions Min. Typ. Max. Unit Remarks Power Supply Operation Logic Operation Start Voltage VCC(ON) VCCx–COMx 10.5 11.5 12.5 V VBS(ON) VBx–HSx 10.5 11.5 12.5 V Logic Operation Stop Voltage VCC(OFF) VCCx–COMx 10.0 11.0 12.0 V VBS(OFF) VBx–HSx 10.0 11.0 12.0 V Logic Supply Current ICC VCC1 = VCC2 = VCC3, COM1 = COM2 = COM3, VCC pin current in 3-phase operation — 3 — mA IBS VBx–HSx = 15 V, HINx = 5 V; VBx pin current in 1-phase operation — 140 — μA Input Signal High Level Input Threshold Voltage (HINx, LINx, FOx, and SD) VIH 1.5 2.0 2.5 V Low Level Input Threshold Voltage (HINx, LINx, FOx, and SD) VIL 1.0 1.5 2.0 V High Level Input Current (HINx and LINx) IIH VIN = 5 V — 230 500 μA Low Level Input Current (HINx and LINx) IIL VIN = 0 V — — 2 μA Fault Signal Output FO Pin Voltage at Fault Signal Output VFOL VFO = 5 V, RFO = 10 kΩ — — 0.5 V FO Pin Voltage in Normal Operation VFOH VFO = 5 V, RFO = 10 kΩ 4.8 — — V Protection OCP Threshold Voltage VTRIP 0.46 0.50 0.54 V OCP Hold Time tP 20 26 — μs OCP Blanking Time tBK VTRIP = 1 V — 370 — ns SD Pin Filtering Time tFIL(SD) 135 300 — ns Temperature Sensing Voltage* VT Tj(MIC) = 125 °C, VRT = 10 kΩ 2.69 2.75 2.81 V * Determined by the junction temperature of the control parts, not of the output transistors.
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 7 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 3.2. Bootstrap Diode Characteristics Parameter Symbol Conditions Min. Typ. Max. Unit Remarks Bootstrap Diode Leakage Current ILBD VR = 600 V — — 10 μA Bootstrap Diode Forward Voltage VFB IFB = 0.15 A — 1.1 1.3 V Bootstrap Diode Series Resistor RBOOT 17.6 22.0 26.4 Ω 3.3. Thermal Resistance Characteristics Parameter Symbol Conditions Min. Typ. Max. Unit Remarks Junction-to-Case Thermal Resistance(1) R(j-c)Q (2) 1 element operating (IGBT) — — 3.7 °C/W SCM1271MF — — 3 SCM1272MF SCM1274MF SCM1276MF R(j-c)F (3) 1 element operating (freewheeling diode) — — 4.5 °C/W SCM1271MF — — 4 SCM1272MF SCM1274MF SCM1276MF (1) Refers to a case temperature at the measurement point described in Figure 3-1, below. (2) Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient thermal characteristics, see Section 15.1. (3) Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case. Measurement point 124 3325 Figure 3-1. Case Temperature Measurement Point
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 8 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 3.4. Transistor Characteristics HINx/ LINx ID/ IC 10% VDS/ VCE td(on) 90% tr ton trr td(off) tf toff Figure 3-2. Switching Characteristics Definitions 3.4.1. SCM1271MF Parameter Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V — — 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 10 A, VIN = 5 V — 1.7 2.2 V Diode Forward Voltage VF IF = 10 A, VIN = 0 V — 1.7 2.2 V High-side Switching Diode Reverse Recovery Time trr VDC = 300 V, IC = 10 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load — 100 — ns Turn-on Delay Time td(on) — 700 — ns Rise Time tr — 100 — ns Turn-off Delay Time td(off) — 1100 — ns Fall Time tf — 90 — ns Low-side Switching Diode Reverse Recovery Time trr VDC = 300 V, IC = 10 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load — 100 — ns Turn-on Delay Time td(on) — 700 — ns Rise Time tr — 120 — ns Turn-off Delay Time td(off) — 1000 — ns Fall Time tf — 100 — ns
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 9 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 3.4.2. SCM1272MF Parameter Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V — — 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 15 A, VIN = 5 V — 1.7 2.2 V Diode Forward Voltage VF IF = 15 A, VIN = 0 V — 1.75 2.2 V High-side Switching Diode Reverse Recovery Time trr VDC = 300 V, IC = 15 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load — 100 — ns Turn-on Delay Time td(on) — 700 — ns Rise Time tr — 110 — ns Turn-off Delay Time td(off) — 1200 — ns Fall Time tf — 100 — ns Low-side Switching Diode Reverse Recovery Time trr VDC = 300 V, IC = 15 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load — 100 — ns Turn-on Delay Time td(on) — 800 — ns Rise Time tr — 120 — ns Turn-off Delay Time td(off) — 1200 — ns Fall Time tf — 100 — ns 3.4.3. SCM1274MF Parameter Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V — — 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 20 A, VIN = 5 V — 1.7 2.2 V Diode Forward Voltage VF IF = 20 A, VIN = 0 V — 1.9 2.4 V High-side Switching Diode Reverse Recovery Time trr VDC = 300 V, IC = 20 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load — 100 — ns Turn-on Delay Time td(on) — 900 — ns Rise Time tr — 160 — ns Turn-off Delay Time td(off) — 1300 — ns Fall Time tf — 120 — ns Low-side Switching Diode Reverse Recovery Time trr VDC = 300 V, IC = 20 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load — 100 — ns Turn-on Delay Time td(on) — 900 — ns Rise Time tr — 190 — ns Turn-off Delay Time td(off) — 1300 — ns Fall Time tf — 120 — ns
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 10 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 3.4.4. SCM1276MF Parameter Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V — — 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 30 A, VIN = 5 V — 1.7 2.2 V Diode Forward Voltage VF IF = 30 A, VIN = 0 V — 1.9 2.4 V High-side Switching Diode Reverse Recovery Time trr VDC = 300 V, IC = 30 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load — 100 — ns Turn-on Delay Time td(on) — 800 — ns Rise Time tr — 150 — ns Turn-off Delay Time td(off) — 1200 — ns Fall Time tf — 170 — ns Low-side Switching Diode Reverse Recovery Time trr VDC = 300 V, IC = 30 A, VIN = 0→5 V or 5→0 V, Tj = 25 °C, inductive load — 100 — ns Turn-on Delay Time td(on) — 800 — ns Rise Time tr — 180 — ns Turn-off Delay Time td(off) — 1200 — ns Fall Time tf — 190 — ns
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 12 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 6. Truth Table Table 6-1 is a truth table that provides the logic level definitions of operation modes. In the case where HINx and LINx signals in each phase are high at the same time, the simultaneous on-state prevention sets both the high- and low-side transistors off. After the IC recovers from a UVLO_VCC condition, the high - and low-side transistors resume switching, according to the input logic levels of the HINx and LINx signals (level-triggered). After the IC recovers from a UVLO_VB condition, the high -side transistors resume switching at the next rising edge of an HINx signal (edge-triggered). Table 6-1. Truth Table for Operation Modes Mode HINx LINx High-side Transistor Low-side Transistor Normal Operation L L OFF OFF H L ON OFF L H OFF ON H H OFF OFF Shutdown Signal Input FO1/FO3/SD = L L L OFF OFF H L OFF OFF L H OFF OFF H H OFF OFF Undervoltage Lockout for High-side Power Supply (UVLO_VB) L L OFF OFF H L OFF OFF L H OFF ON H H OFF OFF Undervoltage Lockout for Low-side Power Supply (UVLO_VCC) L L OFF OFF H L OFF OFF L H OFF OFF H H OFF OFF Overcurrent Protection (OCP) L L OFF OFF H L OFF OFF L H OFF OFF H H OFF OFF
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 13 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 7. Block Diagram VB1 FO1 OCP1 LIN1 COM1 HIN1 VCC1 HS1 VBB W LS3 V LS2 U LS1 VB2 SD VT LIN2 COM2 HIN2 VCC2 HS2 VB3 FO3 OCP3 LIN3 COM3 HIN3 VCC3 HS3 Input logic Simultaneous on-state prevention UVLO_VCC Driv e circuit Driv e circuit Lev el shift Input logic Simultaneous on-state prevention Driv e circuit Driv e circuitTem perature sensing Lev el shift Input logic Simultaneous on-state prevention Driv e circuit Driv e circuitOCP Lev el shift MIC1 MIC2 MIC3 UVLO_VB UVLO_VB UVLO_VCC UVLO_VB HO1 LO1 HO2 LO2 HO3 LO3 Filter 300 ns Filter 3 µs Filter 3 µs Filter 370 ns OCP Filter 370 ns
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 14 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 8. Pin Configuration Definitions Top view Pin Number Pin Name Description
1 FO1 U-phase fault signal output and shutdown signal input
2 OCP1 Input for U-phase overcurrent protection
3 LIN1 Logic input for U-phase low-side gate driver
4 COM1 U-phase logic ground
5 HIN1 Logic input for U-phase high-side gate driver
6 VCC1 U-phase logic supply voltage input
7 VB1 U-phase high-side floating supply voltage input
8 HS1 U-phase high-side floating supply ground
9 SD V-phase shutdown signal input
10 VT Temperature sensing voltage output
11 LIN2 Logic input for V-phase low-side gate driver
12 COM2 V-phase logic ground
13 HIN2 Logic input for V-phase high-side gate driver
14 VCC2 V-phase logic supply voltage input
15 VB2 V-phase high-side floating supply voltage input
16 HS2 V-phase high-side floating supply ground
17 FO3 W-phase fault signal output and shutdown signal input
18 OCP3 Input for W-phase overcurrent protection
19 LIN3 Logic input for W-phase low-side gate driver
20 COM3 W-phase logic ground
21 HIN3 Logic input for W-phase high-side gate driver
22 VCC3 W-phase logic supply voltage input
23 VB3 W-phase high-side floating supply voltage input
24 HS3 W-phase high-side floating supply ground
25 VBB Positive DC bus supply voltage
26 W W-phase output
27 LS3 W-phase IGBT emitter
28 VBB (Pin trimmed) positive DC bus supply voltage
29 V V-phase output
30 LS2 V-phase IGBT emitter
31 VBB (Pin trimmed) positive DC bus supply voltage
32 U U-phase output
33 LS1 U-phase IGBT emitter
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 15 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 9. Typical Applications CR filters and Zener diodes should be added to your application as needed. This is to protect each pin against surge voltages causing malfunctions, and to avoid the IC being used under the conditions exceeding the absolute maximum ratings where critical damage is inevita ble. Then, check all the pins thoroughly under actual operating conditions to ensure that your application works flawlessly. VCC MIC1 VB1 FO1 OCP1 LIN1 COM1 HIN1 VCC1 HS1 VBB W LS3 V LS2 U LS1 Controller INT COM VB2 SD VT LIN2 COM2 HIN2 VCC2 HS2 VB3 FO3 OCP3 LIN3 COM3 HIN3 VCC3 HS3 VFO MIC2 MIC3 A/D M VDC LIN1 HIN1 LIN2 HIN2 LIN3 HIN3 RFO CFO CBOOT1 CBOOT2 CBOOT3 RSDRS RO CO U1 SCM1270MF Series DZVT Thermal RVT Controller power supply Figure 9-1. Typical Application U sing a Single Shunt Resistor
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 16 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 VCC MIC1 VB1 FO1 OCP1 LIN1 COM1 HIN1 VCC1 HS1 VBB W LS3 V LS2 U LS1 Controller INT COM VB2 SD VT LIN2 COM2 HIN2 VCC2 HS2 VB3 FO3 OCP3 LIN3 COM3 HIN3 VCC3 HS3 VFO MIC2 MIC3 A/D M VDC LIN1 HIN1 LIN2 HIN2 LIN3 HIN3 RFO CFO CBOOT1 CBOOT2 CBOOT3 U1 SCM1270MF Series DZVT Thermal RVT RO1CO1 RS2 RS3 RO2 RO3 CO2 CO3 RS1 DRS1DRS2DRS3 Controller power supply Figure 9-2. Typical Application U sing Three Shunt Resistors
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 17 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 10. Physical Dimensions 10.1. Leadform 2552 5xP1.27=6.355xP1.27=6.35 8xP5.1=40.8 (2.6) (2.6) MAX1.2 C C 2.57 1.27 3.7 3.24 1.27 3.7 D D 1.27 3.7 5xP1.27=6.35 (38.6) (11.6) 1.2±0.2 47±0.3 φ3.2±0.15 19±0.3 43.3±0.3 2.08±0.2 0.5 0.5 A A B B (5゚) (5゚) 4.4±0.3 2 +0.5 11.2±0.5 17.25±0.515.95±0.5 +0.2 -0.10.6 +0.2 -0.12 0.5 +0.2 -0.1 0.5 +0.2 -0.1 C-C B-B 0.7 0.5 1.2+0.2 -0.1 +0.2 -0.1 +0.2 -0.1 0.5 +0.2 -0.1 A-A D-D Unit : mm (Root of pin)
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 18 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 10.2. Leadform 2557 (Long Lead Type) 0.6 0.6 (12°) (11°) A A B B 4.4±0.3 +0.2 15.95±0.6 17.25±0.6 5xP1.27=6.355xP1.27=6.35 8xP5.1=40.8 (2.6) (2.6) MAX1.2 2.57 1.27 3.7 3.24 1.27 3.71.27 3.7 5xP1.27=6.35 (0.65) (11.5) (38.5) C C D D 47±0.3 1.2±0.2 Φ3.2±0.15 19±0.3 43.3±0.3 2.08±0.2 +0.2 -0.10.6 +0.2 -0.12 0.5 +0.2 -0.1 0.5 +0.2 -0.1 C-C B-B 0.7 0.5 1.2+0.2 -0.1 +0.2 -0.1 +0.2 -0.1 0.5 +0.2 -0.1 A-A D-D Unit : mm (Root of pin) 14 to 14.8 0 to 0.5 0 to 0.5
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 19 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 10.3. Reference PCB Hole Sizes Pins 1 to 24 Pins 25 to 33 φ1.1 φ1.4 11. Marking Diagram 24 1 Part Number Lot Number : Y is the last digit of the year of manufacture (0 to 9) M is the month of the year (1 to 9, O, N, or D) DD is the day of the month (01 to 31) X is the control number 3325 J APA N YMDDXSCM127xMF Branding Area 33 25
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 27 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 down, the OCPx pin voltage increases proportionally to a rise in the current running through the shunt resistor, RS. Figure 12-22 shows the OCP operational waveforms when the OCP1 pin (U -phase) or the OCP3 pin (W-phase) detects an overcurrent. When the OCPx pin voltage increases to the O CP Threshold Voltage ( VTRIP,
0.50 V) or more, and remains in this condition for a
period of the OCP Blanking Time (tBK, 370 ns) or longer, the OCP x circuit is activated . When an internal delay time ( tDELAY) of 0.3 µs has elapsed after the OCP activation, the enabled OCPx circuit shuts off the corresponding output transistors and puts the FOx pin into a low state. Then, output current decreases as a result of the output transistors turn -off. Even if the OCPx pin voltage falls below VTRIP, the IC holds the FOx pin in the low state for a fixed OCP hold time (t P) of 26 μs (typ.). Then, the output transistors operate according to input signals. The V-phase control circuit being built without OPC, an overcurrent signal from the V -phase must be input to the OCPx pin that detect s a U- or W-phase OCP signal. The V-phase SD pin is connected to the U - and W-phase FOx pins for this V -phase OCP alternative. When the OCPx pin detects overcurrents, the SD pin, as well as the FOx pin, goes into logic low , and then the V-phase output transistors turn off after a lapse of the SD Pin Filtering Time (tFIL(SD), 300 ns), as in Figure 12-23. A turn-off delay time of the V-phase output transistors depends on the capacitance of the FO pin capacitor, C FO. If the delay time is too long, the output transistors may be destroyed due to overcurrent. Thus, the value of CFO must be set to ≤1000 pF. The OCP is used for detecting abnormal conditions, such as an output transistor shorted. In case short -circuit conditions occur repeatedly, the output transistors can be destroyed. To prevent such event, motor operation must be controlled by the external microcontroller so that it can immediately stop the motor when fault signals are detected. The external microcontroller receives the fault signals with its interrupt pin (INT), and must be programmed to put the H INx and L INx pins to logic low within the predetermined OCP hold time, t P. If you need to resume the motor operation thereafter, set the motor to be resumed after a lapse of ≥2 seconds. For proper shunt resistor setting, your application must meet the following:
- Use the shunt resistor that has a recommended resistance, RS (see Section 2).
- Set the OCPx pin input voltage to vary within the rated OCP pin voltages, VOCP (see Section 1).
- Keep the current through the output transistors below the rated output current (pulse), IOP (see Section 1). It is required to use a resistor with low internal inductance because high -frequency switching current will flow through the shunt resistor, R S. In addition, choose a resistor with allowable power dissipation according to your application. When you connect a CR filter (i.e., a pair of a filter resistor, RO, and a filter capacitor, C O) to the OCPx pin, care should be taken in setting the time constants of R O and CO. The larger the time constant, the longer the time that the OCPx pin voltage rises to V TRIP. And this may cause permanent damage to the transistors. Consequently, a propagation delay of the IC must be taken into account when you determine the time constants. For R O and CO, their time constants must be set to ≤0.82 µs. The filter capacitor, C O, should also be placed near the IC, between the OCPx and COMx pins with a minimal length of traces. Note that overcurrents are undetectable when one or more of the U, V, and W pins or the ir traces are shorted to ground (ground fault). In case any of these pins falls into a state of ground fault, the output transistors may be destroyed. VBB LSx COM OCPx COMx A/D RS RO CO DRS VTRIP 100 kΩ Blanking filter Output transistors turn-off and QFO turn-on 370 ns (typ.) 2 kΩ 2 kΩ Figure 12-21. Internal Circuit Diagram of OCPx Pin and Its Peripheral Circuit LIN1/ LIN3 HIN1/ HIN3 HO1/ HO3 LO1/ LO3 FO1/ FO3 OCP1/ OCP3 VTRIP tBK tBK tDELAY 0.3 µs (typ.) tP tBK HOx responds to input signal . FOx res tarts automatically after t P. Figure 12-22. OCP Operational Waveforms (U- or W-phase)
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 29 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 13. Design Notes This section also employs the notation system described in the beginning of the previous section. 13.1. PCB Pattern Layout Figure 13-1 shows a schematic diagram of a motor driver circuit. The motor driver circuit consists of current paths having high frequencies and high voltages, which also bring about negative influences on IC operation, noise interference , and power dissipation. Therefore, PCB trace layouts and component placements play an important role in circuit designing. Current loops, which have high frequencies and high voltages, should be as small and wide as possible, in order to maintain a low-impedance state. In addition, ground traces should be as wide and short as possible so that radiated EMI levels can be reduced. MIC1 VBB W LS3 V LS2 U LS1 MIC2 MIC3 26 M VDC High-frequency, high-voltage current loops should be as small and wide as possible. Ground traces should be wide and short. Figure 13-1. High -frequency, High-voltage Current Paths 13.2. Considerations in Heatsink Mounting The following are the key considerations and the guidelines for mounting a heatsink:
- It is recommended to use a pair of a metric screw of M3 and a plain washer of 7 mm (φ). To tighten the screws, use a torque screwdriver. Tighten the two screws firstly up to about 30% of the maximum screw torque, then finally up to 100% of the prescribed maximum screw torque. Perform appropriate tightening within the range of screw torque defined in Section 4.
- When mounting a heatsink, it is recommended to use silicone greases. If a thermally conductive sheet or an electrically insulating sheet is used, package cracks may be occurred due to creases at screw tightening. Therefore, you should conduct thorough evaluations before using these materials.
- When applying a silicone grease, make sure that there must be no foreign substances between the IC and a heatsink. Extreme care should be taken not to apply a silicone grease onto any device pins as much as possible. The following requirements must be met for proper grease application: − Grease thickness: 100 μm − Heatsink flatness: ±100 μm − Apply a silicone grease within the area indicated in Figure 13-2, below. Heatsink Thermal silicone grease application area 3.13.1 37.6 Unit: mm 5.8
5.8 M3 M3
Figure 13-2. Reference Application Area for Thermal Silicone Grease 13.3. Considerations in IC Characteristics Measurement When measuring the breakdown voltage or leakage current of the transistors incorporated in the IC , note that the gate and emitter of each transistor should have the same potential. Moreover, care should be taken when performing the measurements , because the collectors of the high- side transistors are all internally connected to the VBB pin. The output (U, V, and W) pins are connected to the emitters of the corresponding high- side transistors, whereas the LSx pins are connected to the emitters of the low -side transistors. The gates of the high-side transistors are pulled down to the corresponding output (U, V, and W) pins; similarly, the gates of the low -side transistors are pulled down to the COMx pins. When measuring the breakdown voltage or leakage current of the transistors incorporated in the IC, note that all of the output (U, V, and W), LSx, and COMx pins must be appropriately connected. Otherwise the switching transistors may result in permanent damage. The following are circuit diagrams representing typical measurement circuits for breakdown voltage: Figure 13-3 shows the high -side transistor (Q 1H) in the U-phase; Figure 13-4 shows the low-side transistor (Q1L)
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 31 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 Figure 14-1. Linear Approximate Equation of V CE(SAT) vs. IC Curve 14.2. IGBT Switching Loss, PSW Switching loss in an IGBT, P SW, can be calculated by Equation (5), letting I M be the effective current value of the motor: PSW = √2 π × fC × αE × IM × VDC 300 . (5) Where: fC is the PWM carrier frequency (Hz), VDC is the main power supply voltage ( V), i.e., the VBB pin input voltage, and αE is the slope of the switching loss curve (see Section 15.3.2). 14.3. Estimating Junction Temperature of IGBT The junction temperature of an IGBT, Tj, can be estimated with Equation (6): Tj = R(j−C)Q × (PON + PSW) + TC . (6) Where: R(j-c)Q is the junction -to-case thermal resistance per IGBT (°C/W), and TC is the case temperature ( °C), measured at the point defined in Figure 3-1. y = 0.108x + 0.831 y = 0.036x + 1.359 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6 7 8 9 10 VCE(SAT) (V) IC (A) VCC=15V 75°C 125°C 25°C
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 32 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 15. Performance Curves 15.1. Transient Thermal Resistance Curves The following graphs represent transient thermal resistance (the ratios of transient thermal resistance), with steady-state thermal resistance = 1. 15.1.1. SCM1271MF 15.1.2. SCM1272MF, SCM1274MF, SCM1276MF 0.01 0.10 1.00 1 10 100 1000 10000 Ratio of Transient Thermal Resistance Time (ms) 0.01 0.10 1.00 1 10 100 1000 10000 Ratio of Transient Thermal Resistance Time (ms)
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 48 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 15.5. Short Circuit SOAs (Safe Operating Areas) Conditions: VDC ≤ 400 V, 13.5 V ≤ VCC ≤ 16.5 V, Tj = 125°C, 1 pulse. 15.5.1. SCM1271MF 15.5.2. SCM1272MF 100 150 200 0 1 2 3 4 5 Collector Current, IC(PEAK) (A) Pulse Width (µs) Short Circuit SOA 100 150 200 250 0 1 2 3 4 5 Collector Current, IC(PEAK) (A) Pulse Width (µs) Short Circuit SOA
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 49 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 15.5.3. SCM1274MF 15.5.4. SCM1276MF 100 150 200 250 300 0 1 2 3 4 5 Collector Current, IC(PEAK) (A) Pulse Width (µs) Short Circuit SOA 100 150 200 250 300 350 400 0 1 2 3 4 5 Collector Current, IC(PEAK) (A) Pulse Width (µs) Short Circuit SOA
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 51 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 VB1 FO1 OCP1 LIN1 COM1 HIN1 VCC1 HS1 VBB W LS3 V LS2 U LS1 VB2 SD VT LIN2 COM2 HIN2 VCC2 HS2 VB3 FO3 OCP3 LIN3 COM3 HIN3 VCC3 HS3 R17 C20 R11 R12 R13 C13 C21 C14 C15 C16 C17 C18 C19 C23 R10 R14 SV1 C24 R15 C25 R16 SV2 SV3 C10 C11 R19 R18 JP1 JP2 IPM1 Figure16-3. Circuit Diagram of PCB Pattern Layout Example
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 52 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 17. Typical Motor Driver Application This section contains the information on the typical motor driver application listed in the previous section, including a circuit diagram, specifications, and the bill of the materials used.
- Motor Driver Specifications IC SCM1272MF Main Supply Voltage, VDC 300 VDC (typ.) Rated Output Power 1.35 kW
- Circuit Diagram See Figure16-3.
- Bill of Materials Symbol Part Type Ratings Symbol Part Type Ratings C1 Electrolytic 47 μF, 50 V D5 General 1 A, 50 V C2 Electrolytic 47 μF, 50 V D6 General 1 A, 50 V C3 Electrolytic 47 μF, 50 V D7 General 1 A, 50 V C4 Electrolytic 100 μF, 50 V R1* Metal plate 18 mΩ, 2 W C5 Ceramic 100 pF, 50 V R2* Metal plate 18 mΩ, 2 W C6 Ceramic 100 pF, 50 V R3* Metal plate 18 mΩ, 2 W C7 Ceramic 100 pF, 50 V R4 General 100 Ω, 1/8 W C8 Ceramic 100 pF, 50 V R5 General 100 Ω, 1/8 W C9 Ceramic 100 pF, 50 V R6 General 100 Ω, 1/8 W C10 Ceramic 100 pF, 50 V R7 General 100 Ω, 1/8 W C11 Ceramic 100 pF, 50 V R8 General 100 Ω, 1/8 W C13 Ceramic 4700 pF, 50 V R9 General 100 Ω, 1/8 W C14 Ceramic 0.1 μF, 50 V R10 General 100 Ω, 1/8 W C15 Ceramic 0.1 μF, 50 V R11 General 200 Ω, 1/8 W C16 Ceramic 0.1 μF, 50 V R12 General 200 Ω, 1/8 W C17 Ceramic 0.1 μF, 50 V R13 General 200 Ω, 1/8 W C18 Ceramic 0.1 μF, 50 V R14* General Open C19 Ceramic 0.1 μF, 50 V R15* General Open C20 Ceramic 1000 pF, 50 V R16* General Open C21 Film 0.22μF, 630 V R17 General 3.3 kΩ, 1/8 W C23* Ceramic 0.1 μF, 50 V R18 General 5.1 kΩ, 1/8 W C24* Ceramic 0.1 μF, 50 V R19 General 100 Ω, 1/8 W C25* Ceramic 0.1 μF, 50 V SV1 Pin header 2.54 mm pitch D1 General 1 A, 50 V SV2 Connector Equiv. to B2P3-VH D2 General 1 A, 50 V SV3 Connector Equiv. to B3P5-VH D3 General 1 A, 50 V IPM1 IC SCM1272MF D4 Zener VZ = 20 V, 0.5 W * Refers to a part that requires adjustment based on operation performance in an actual application.
SCM1270MF-DSE Rev.1.4 SANKEN ELECTRIC CO., LTD. 53 Aug. 9, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 Important Notes
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