SCM1200MF

SCM1200MF SANKEN | Alldatasheet

Document overview

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Technical content

Datasheet sections

Features

• Each half-bridge circuit consists of a pre-driver IC
• In case of malfunction, all outputs shut down via three FO pins connected together
• Built-in b ootstrap diodes with current limmiting resistors (22 Ω)
• CMOS compatible input (3.3 to 5 V)
• Pb free
• Isolation voltage: 2500 V for 1 min, UL recognized component (File No.: E118037)
• Fault signal output at protection activation
• Protections include: Undervoltage Lockout for power supply High-side (UVLO_VB): Auto-restart Low-side (UVLO_VCC): Auto-restart Overcurrent Protection (OCP): Auto-restart Simultaneous On-state Prevention: Auto-restart Thermal Shutdown (TSD): Auto-restart Typical Application Diagram VCC MIC1 VB1 FO1 OCP1 LIN1 COM1 HIN1 VCC1 HS1 VBB W LS3 V LS2 U LS1 Controller INT A/D1 COM VB2 FO2 OCP2 LIN2 COM2 HIN2 VCC2 HS2 VB3 FO3 OCP3 LIN3 COM3 HIN3 VCC3 HS3 VFO MIC2 MIC3 A/D2 A/D3 M VDC LIN1 HIN1 LIN2 HIN2 LIN3 HIN3 RFO CFO CBOOT1 CBOOT2 CBOOT3 RS1RS2RS3 RO1 RO3 RO3 CO3CO2CO1 U1 SCM1200MF Series Package SCM (pin pitch: 1.27 mm, mold dimensions: 47 × 19 × 4.4 mm) Not to scale SCM1200MF Series
• IGBT+FRD (600 V) IO (A) Feature Part Number

10 A Low noise SCM1261MF*

SCM1263MF* Low switching dissipation SCM1243MF 20 A Low noise SCM1265MF* Low switching dissipation SCM1245MF 30 A Low noise SCM1256MF Low switching dissipation SCM1246MF * Uses a shorter blanking time for OCP activation.

Applications

For motor drives such as:

• Refrigerator compressor motor
• Air conditioner compressor motor
• Washing machine main motor
• Fan motor
• Pump motor 余白上 35mm ヘッター1 線 長さ 174 mm 下方向 33mm 右方向-2mm ヘッター1 線 長さ 174 mm 下方向 33mm 右方向-2mm

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 3 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 4 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 1. Absolute Maximum Ratings

• Current polarities are defined as follows: a current flow going into the IC (sinking) is positive current (+); and a current flow coming out of the IC (sourcing) is negative current (−).
• Unless specifically noted, TA = 25°C. Characteristics Symbol Conditions Rating Unit Remarks Main Supply Voltage (DC) VDC VBB – LS1 VBB – LS2 VBB – LS3 450 V Main Supply Voltage (Surge) VDC(SURGE) VBB – LS1 VBB – LS2 VBB – LS3 500 V IGBT Breakdown Voltage VCES VCC = 15 V, IC = 1 mA, VIN = 0 V 600 V Logic Supply Voltage VCC VCC1– COM1 VCC2– COM2 VCC3– COM3 V VBS VB1 – HS1(U) VB2– HS2(V) VB3 – HS3(W) Output Current (DC)(1) IO TC = 25 °C A SCM1261MF

15 SCM1242MF/63MF/43MF

20 SCM1265MF/45MF

30 SCM1256MF/46MF

Output Current (Pulse) IOP TC = 25 °C, PW ≤ 1ms A SCM1261MF

30 SCM1242MF/63MF/

45 SCM1256MF/46MF

HIN1, LIN1– COM1 HIN2, LIN2– COM2 HIN3, LIN3– COM3 −0.5 to 7 V FO Pin Voltage VFO FO1– COM1 FO2– COM2 FO3– COM3 −0.5 to 7 V OCP Pin Voltage VOCP OCP1– COM1 OCP2– COM2 OCP3– COM3 −10 to 5 V Operating Case Temperature(2) TC(OP) −30 to 125 °C Junction Temperature(3) Tj 150 °C Storage Temperature Tstg −40 to 150 °C Isolation Voltage(4) VISO(RMS) Between surface of heatsink side and each pin; AC, 60 Hz, 1 min 2500 V (1) Should be derated depending on an actual case temperature. See Section 15.4. (2) Refers to a case temperature measured during IC operation. (3) Refers to the junction temperature of each chip including its built-in controller ICs (MICs), transistors, and freewheeling diodes. (4) Refers to voltage conditions to be applied between the case and all pins. All pins have to be shorted.

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 5 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 2. Recommended Operating Conditions Characteristics Symbol Conditions Min. Typ. Max. Unit Remarks Main Supply Voltage VDC COM1 = COM2 = COM3 VBB – COM － 300 400 V Logic Supply Voltage VCC VCC1– COM1 VCC2– COM2 VCC3– COM3 13.5 － 16.5 V VBS VB1 – HS1(U) VB2– HS2(V) VB3 – HS3(W) 13.5 － 16.5 V Input Voltage (HIN, LIN, FO) VIN 0 － 5.5 V Minimum Input Pulse Width tIN(MIN)ON 0.5 － － μs tIN(MIN)OFF 0.5 － － μs Dead Time of Input Signal tDEAD 1.0 － － μs SCM1243MF/ 45MF/46MF 1.5 － － SCM1242MF/ 56MF/61MF/65MF FO Pin Pull-up Resistor RFO 1 － 22 kΩ FO Pin Pull-up Voltage VFO 3.0 － 5.5 V FO Pin Capacitor for Noise Reduction CFO 0.001 － 0.01 μF Bootstrap Capacitor CBOOT 10 － 220 μF Shunt Resistor RS IP ≤ 45 A 12 － － mΩ SCM1256MF/46MF IP ≤ 30 A 18 － － SCM1242MF/43MF/ 63MF/65MF/45MF IP ≤ 20 A 27 － － SCM1261MF RC Filter Resistor RO － － 100 Ω RC Filter Capacitor CO 1000 － 2200 pF SCM124xMF SCM125xMF 1000 － 10000 SCM126xMF PWM Carrier Frequency fc － － 20 kHz Case Temperature in Operation TC(OP) － － 100 °C

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 6 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 3. Electrical Characteristics

• Current polarities are defined as follows: a current flow going into the IC (sinking) is positive current (+); and a current flow coming out of the IC (sourcing) is negative current (−).
• Unless specifically noted, TA = 25°C, VCC = 15 V. 3.1. Characteristics of Control Parts Characteristics Symbol Conditions Min. Typ. Max. Unit Remarks Power Supply Operation Logic Operation Start Voltage VCC(ON) VCC1– COM1 VCC2– COM2 VCC3– COM3 10.5 11.5 12.5 V VBS(ON) VB1 – HS1(U) VB2– HS2(V) VB3 – HS3(W) 10.5 11.5 12.5 V Logic Operation Stop Voltage VCC(OFF) VCC1– COM1 VCC2– COM2 VCC3– COM3 10.0 11.0 12.0 V VBS(OFF) VB1 – HS1(U) VB2– HS2(V) VB3 – HS3(W) 10.0 11.0 12.0 V Logic Supply Current ICC VCC1 = VCC2 = VCC3, COM1 = COM2 = COM3 VCC pin current in 3 phases operating － 3 － mA IBS VB – HS = 15 V, HIN = 5 V, VB pin current in single phase operation － 140 － μA Input Signal High Level Input Signal Threshold Voltage (HIN, LIN, FO) VIH 1.5 2.0 2.5 V Low Level Input Signal Threshold Voltage (HIN, LIN, FO) VIL 1.0 1.5 2.0 V Input Current at High Level (HIN, LIN) IIH VIN = 5 V － 230 500 μA Input Current at Low Level (HIN, LIN) IIL VIN = 0 V － － 2 μA Fault Signal Output FO Pin Voltage in Fault Signal Output VFOL VFO = 5 V, RFO = 10 kΩ － － 0.5 V FO Pin Voltage in Normal Operation VFOH VFO = 5 V, RFO = 10 kΩ 4.8 － － V Protection Overcurrent Protection Threshold Voltage VTRIP 0.46 0.50 0.54 V Overcurrent Protection Hold Time tP 20 26 － μs Overcurrent Protection Blanking Time tBK VTRIP = 1 V － 1.65 － μs SCM124xMF SCM125xMF － 0.54 － SCM126xMF Thermal Shutdown Operating Temperature* TDH 135 150 － °C Thermal Shutdown Releasing Temperature* TDL 105 120 － °C * Refers to the junction temperature of the built-in controller ICs (MICs).

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 7 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 3.2. Bootstrap Diode Characteristics Characteristics Symbol Conditions Min. Typ. Max. Unit Remarks Bootstrap Diode Leakage Current ILBD VR = 600 V − − 10 μA Bootstrap Diode Forward Voltage VFB IFB = 0.15 A − 1.1 1.3 V Bootstrap Diode Series Resistor RBOOT 17.6 22.0 26.4 Ω 3.3. Thermal Resistance Characteristics Characteristics Symbol Conditions Min. Typ. Max. Unit Remarks Junction-to-Case Thermal Resistance(1) R(j-c)Q (2) 1 element operation (IGBT) － － 3.7 °C/W SCM1261MF － － 3 SCM12/42MF /63MF/43MF/65MF /45MF/56MF/46MF R(j-c)F (3) 1 element operation (Freewheeling diode) － － 4.5 °C/W SCM1261MF － － 4 SCM12/42MF /63MF/43MF/65MF /45MF/56MF/46MF (1) Refers to a case temperature at the measurement point described in Figure 3-1, below. (2) Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient thermal characteristics, see Section 15.1. (3) Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case. Measurement point 124 3315 Figure 3-1. Case temperature measurement point

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 8 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 3.4. Transistor Characteristics Figure 3-2. Switching time definition 3.4.1. SCM1261MF Characteristics Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V − − 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 10 A, VIN = 5 V － 1.7 2.2 V Emitter-to-Collector Diode Forward Voltage VF IF = 10 A,VIN = 0 V － 1.7 2.2 V High-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 10 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 85 − ns Turn-On Delay Time td(on) − 700 − ns Rise Time tr − 100 − ns Turn-Off Delay Time td(off) − 1070 − ns Fall Time tf − 90 − ns Low-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 10 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 105 − ns Turn-On Delay Time td(on) − 710 − ns Rise Time tr − 120 − ns Turn-Off Delay Time td(off) − 1010 − ns Fall Time tf − 95 − ns IN 10% 90% td(on) tr ton ID trr VDS 10% 90% td(oｆｆ) tｆ toｆｆ

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 9 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 3.4.2. SCM1242MF Characteristics Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V − − 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 15 A, VIN = 5 V － 1.7 2.2 V Emitter-to-Collector Diode Forward Voltage VF IF = 15 A,VIN = 0 V － 1.75 2.2 V High-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 15 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 80 − ns Turn-On Delay Time td(on) − 700 − ns Rise Time tr − 100 − ns Turn-Off Delay Time td(off) − 1300 − ns Fall Time tf − 90 − ns Low-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 15 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 90 − ns Turn-On Delay Time td(on) − 700 − ns Rise Time tr − 130 − ns Turn-Off Delay Time td(off) − 1230 − ns Fall Time tf − 90 − ns 3.4.3. SCM1263MF Characteristics Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V − − 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 15 A, VIN = 5 V － 1.7 2.2 V Emitter-to-Collector Diode Forward Voltage VF IF = 15 A,VIN = 0 V － 1.75 2.2 V High-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 15 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 80 − ns Turn-On Delay Time td(on) − 700 − ns Rise Time tr − 100 − ns Turn-Off Delay Time td(off) − 1300 − ns Fall Time tf − 90 − ns Low-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 15 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 90 − ns Turn-On Delay Time td(on) − 700 − ns Rise Time tr − 130 − ns Turn-Off Delay Time td(off) − 1230 − ns Fall Time tf − 90 − ns

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 10 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 3.4.4. SCM1243MF Characteristics Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V − − 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 15 A, VIN = 5 V － 1.7 2.2 V Emitter-to-Collector Diode Forward Voltage VF IF = 15 A,VIN = 0 V － 1.75 2.2 V High-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 15 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 70 − ns Turn-On Delay Time td(on) − 600 − ns Rise Time tr − 70 − ns Turn-Off Delay Time td(off) − 620 − ns Fall Time tf − 60 − ns Low-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 15 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 80 − ns Turn-On Delay Time td(on) − 600 − ns Rise Time tr − 100 − ns Turn-Off Delay Time td(off) − 600 − ns Fall Time tf − 70 − ns 3.4.5. SCM1265MF Characteristics Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V − − 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 20 A, VIN = 5 V － 1.7 2.2 V Emitter-to-Collector Diode Forward Voltage VF IF = 20 A,VIN = 0 V － 1.9 2.4 V High-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 20 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 80 − ns Turn-On Delay Time td(on) − 780 − ns Rise Time tr − 120 − ns Turn-Off Delay Time td(off) − 1150 − ns Fall Time tf − 90 − ns Low-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 20 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 85 − ns Turn-On Delay Time td(on) − 810 − ns Rise Time tr − 170 − ns Turn-Off Delay Time td(off) − 1100 − ns Fall Time tf − 90 − ns

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 11 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 3.4.6. SCM1245MF Characteristics Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V − − 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 20 A, VIN = 5 V － 1.7 2.2 V Emitter-to-Collector Diode Forward Voltage VF IF = 20 A,VIN = 0 V － 1.9 2.4 V High-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 20 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 75 − ns Turn-On Delay Time td(on) − 695 − ns Rise Time tr − 95 − ns Turn-Off Delay Time td(off) − 675 − ns Fall Time tf − 55 − ns Low-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 20 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 115 − ns Turn-On Delay Time td(on) − 715 − ns Rise Time tr − 135 − ns Turn-Off Delay Time td(off) − 670 − ns Fall Time tf − 50 − ns 3.4.7. SCM1256MF Characteristics Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V − − 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 30 A, VIN = 5 V － 1.7 2.2 V Emitter-to-Collector Diode Forward Voltage VF IF = 30 A,VIN = 0 V － 1.9 2.4 V High-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 30 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 70 − ns Turn-On Delay Time td(on) − 760 − ns Rise Time tr − 130 − ns Turn-Off Delay Time td(off) − 1260 − ns Fall Time tf − 90 − ns Low-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 30 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 80 − ns Turn-On Delay Time td(on) − 770 − ns Rise Time tr − 160 − ns Turn-Off Delay Time td(off) − 1200 − ns Fall Time tf − 90 − ns

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 12 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 3.4.8. SCM1246MF Characteristics Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V − − 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 30 A, VIN = 5 V － 1.7 2.2 V Emitter-to-Collector Diode Forward Voltage VF IF = 30 A,VIN = 0 V － 1.9 2.4 V High-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 30 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 60 − ns Turn-On Delay Time td(on) − 660 − ns Rise Time tr − 110 − ns Turn-Off Delay Time td(off) − 700 − ns Fall Time tf − 50 − ns Low-side Switching Emitter-to-Collector Diode Reverse Recovery Time trr VDC = 300 V, IC = 30 A, inductive load, VIN = 0→5 V or 5→0 V, Tj = 25°C − 70 − ns Turn-On Delay Time td(on) − 660 − ns Rise Time tr − 150 − ns Turn-Off Delay Time td(off) − 690 − ns Fall Time tf − 50 − ns

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 14 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 6. Truth Table Table 6-1 is a truth table that provides the logic level definitions of operation modes. In the case where HIN and LIN signals in each phase are high at the same time, the simultaneous on-state prevention function sets both the high-side and low-side transistors off. After recovering from a UVLO_VCC condition, the high -side and low-side transistors resume switching according to the input logic levels of the next HIN and LIN signals (level-triggered). After recovering from a UVLO_VB condition, the high-side transistors resume switching at the next rising edge of an HIN signal (edge-triggered). Table 6-1. Truth table for operation modes Mode HIN LIN High-side Transistors Low-side Transistors Normal Operation L L OFF OFF H L ON OFF L H OFF ON H H OFF OFF External Shutdown Signal Input FO = L L L OFF OFF H L OFF OFF L H OFF OFF H H OFF OFF High-side Undervoltage Lockout for Power Supply (UVLO_VB) L L OFF OFF H L OFF OFF L H OFF ON H H OFF OFF Low-side Undervoltage Lockout for Power Supply (UVLO_VCC) L L OFF OFF H L OFF OFF L H OFF OFF H H OFF OFF Overcurrent Protection (OCP) L L OFF OFF H L OFF OFF L H OFF OFF H H OFF OFF Thermal Shutdown (TSD) L L OFF OFF H L OFF OFF L H OFF OFF H H OFF OFF

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 15 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 7. Block Diagram VB1 FO1 OCP1 LIN1 COM1 HIN1 VCC1 HS1 VBB W LS3 V LS2 U LS1 VB2 FO2 OCP2 LIN2 COM2 HIN2 VCC2 HS2 VB3 FO3 OCP3 LIN3 COM3 HIN3 VCC3 HS3 Input logic Simultaneous on state prevention UVLO_VCC Drive circuit Drive circuit TSD OCP Level shift Input logic Simultaneous on state prevention Drive circuit Drive circuit TSD OCP Level shift Input logic Simultaneous on state prevention Drive circuit Drive circuit TSD OCP Level shift MIC1 MIC2 MIC3 UVLO_VB UVLO_VCC UVLO_VB UVLO_VCC UVLO_VB HO1 LO1 HO2 LO2 HO3 LO3

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 16 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 8. Pin-out Diagram Top view Pin Number Pin Name Functions

1 FO1 U-phase fault output and shutdown signal input

2 OCP1 Input for U-phase Overcurrent Protection

3 LIN1 Logic input for U-phase low-side gate driver

4 COM1 U-phase logic ground

5 HIN1 Logic input for U-phase high-side gate driver

6 VCC1 U-phase logic supply voltage input

7 VB1 U-phase high-side floating supply voltage input

8 HS1 U-phase high-side floating supply ground

9 FO2 V-phase fault output and shutdown signal input

10 OCP2 Input for V-phase Overcurrent Protection

11 LIN2 Logic input for V-phase low-side gate driver

12 COM2 V-phase logic ground

13 HIN2 Logic input for V-phase high-side gate driver

14 VCC2 V-phase logic supply voltage input

15 VB2 V-phase high-side floating supply voltage input

16 HS2 V-phase high-side floating supply ground

17 FO3 W-phase fault output and shutdown signal input

18 OCP3 Input for W-phase Overcurrent Protection

19 LIN3 Logic input for W-phase low-side gate driver

20 COM3 W-phase logic ground

21 HIN3 Logic input for W-phase high-side gate driver

22 VCC3 W-phase logic supply voltage input

23 VB3 W-phase high-side floating supply voltage input

24 HS3 W-phase high-side floating supply ground

25 VBB Positive DC bus supply voltage

26 W W-phase output

27 LS3 W-phase IGBT emitter

28 VBB (Pin trimmed) positive DC bus supply voltage

29 V V-phase output

30 LS2 V-phase IGBT emitter

31 VBB (Pin trimmed) positive DC bus supply voltage

32 U U-phase output

33 LS1 U-phase IGBT emitter

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 17 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 9. Typical Applications CR filters and Zener diodes should be added to your application as needed, so that you can: protect each pin against surge voltage s causing malfunctions; and avoid the IC being used under the conditions exceeding the a bsolute maximum ratings, resulting in critical damage to itself . Th en test all the pins thoroughly under actual operati ng conditions to ensure that your application works flawlessly. CHIN1 VCC MIC1 VB1 FO1 OCP1 LIN1 COM1 HIN1 VCC1 HS1 VBB W LS3 V LS2 U LS1 Controller INT A/D1 COM VB2 FO2 OCP2 LIN2 COM2 HIN2 VCC2 HS2 VB3 FO3 OCP3 LIN3 COM3 HIN3 VCC3 HS3 VFO MIC2 MIC3 A/D2 A/D3 M VDC LIN1 HIN1 LIN2 HIN2 LIN3 HIN3 RFO CFO CBOOT1 CBOOT2 CBOOT3 RS1RS2RS3 RO1 RO2 RO3 CO3CO2CO1 DRS3 DRS2 DRS1 CDCCS DZ CP1 CP2 CP3 DBOOT1 RBOOT1 DBOOT2 RBOOT2 DBOOT3 RBOOT3 CVCC1 CLIN1 CVCC2 CHIN2 CLIN2 CVCC3 CHIN3 CLIN3 U1 SCM1200MF Series Figure 9-1. Typical application using three shunt resistors

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 18 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 CHIN1 VCC MIC1 VB1 FO1 OCP1 LIN1 COM1 HIN1 VCC1 HS1 VBB W LS3 V LS2 U LS1 Controller INT A/D COM VB2 FO2 OCP2 LIN2 COM2 HIN2 VCC2 HS2 VB3 FO3 OCP3 LIN3 COM3 HIN3 VCC3 HS3 VFO MIC2 MIC3 M VDC LIN1 HIN1 LIN2 HIN2 LIN3 HIN3 RFO CFO CBOOT1 CBOOT2 CBOOT3 RS RO CO DRS CDCCS DZ CP1 CP2 CP3 DBOOT1 RBOOT1 DBOOT2 RBOOT2 DBOOT3 RBOOT3 CVCC1 CLIN1 CVCC2 CHIN2 CLIN2 CVCC3 CHIN3 CLIN3 U1 SCM1200MF Series Figure 9-2. Typical application using shingle shunt resistor

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 19 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 10. External Dimensions 10.1. LF2552 5xP1.27=6.355xP1.27=6.35 8xP5.1=40.8 (2.6) (2.6) MAX1.2 C C 2.57 1.27 3.7 3.24 1.27 3.7 D D 1.27 3.7 5xP1.27=6.35 (38.6) (11.6) 1.2±0.2 47±0.3 φ3.2±0.15 19±0.3 43.3±0.3 2.08±0.2 0.5 0.5 A A B B (5ﾟ) (5ﾟ) 4.4±0.3 2 +0.5 11.2±0.5 17.25±0.515.95±0.5 +0.2 -0.10.6 +0.2 -0.12 0.5 +0.2 -0.1 0.5 +0.2 -0.1 C-C B-B 0.7 0.5 1.2+0.2 -0.1 +0.2 -0.1 +0.2 -0.1 0.5 +0.2 -0.1 A-A D-D （Measured at base of pins） Unit: mm

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 20 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 10.2. LF2557 (Long Lead Type) 0.6 0.6 14～14.8 (12°) (11°) 0～0.50～0.5 A A B B 4.4±0.3 +0.2 15.95±0.6 17.25±0.6 5xP1.27=6.355xP1.27=6.35 8xP5.1=40.8 (2.6) (2.6) MAX1.2 2.57 1.27 3.7 3.24 1.27 3.71.27 3.7 5xP1.27=6.35 (0.65) (11.5) (38.5) C C D D 47±0.3 1.2±0.2 Φ3.2±0.15 19±0.3 43.3±0.3 2.08±0.2 +0.2 -0.10.6 +0.2 -0.12 0.5 +0.2 -0.1 0.5 +0.2 -0.1 C-C B-B 0.7 0.5 1.2+0.2 -0.1 +0.2 -0.1 +0.2 -0.1 0.5 +0.2 -0.1 A-A D-D （Measured at base of pins） Unit: mm

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 21 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 10.3. LF2558 (Wide Lead-Forming Type) 5xP1.27=6.355xP1.27=6.35 8xP5.1=40.8 19 ±0.3 (2.6) MAX1.2 0.5 0.5 C C 2.57 1.27 3.7 3.24 1.27 3.7 D D 1.27 3.7 5xP1.27=6.35 (38.6) (11.6) A B B (5°) (5°) (2°)(13.6) (1) 47±0.3 1.2±0.2 43.3±0.3 Φ3.2±0.15 15.95±0.5 14.75±0.511.45±0.5 4.4±0.3 17.25±0.5 11.2±0.5 +0.5 2.08±0.2 +0.2 -0.10.6 +0.2 -0.12 0.5 +0.2 -0.1 0.5 +0.2 -0.1 C-C B-B 0.7 0.5 1.2+0.2 -0.1 +0.2 -0.1 +0.2 -0.1 0.5 +0.2 -0.1 A-A D-D （Measured at base of pins） Unit: mm

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 22 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 10.4. Recommended PCB Hole Size 1 pin ~ 24 pin 25 pin ~ 33 pin φ1.1 φ1.4 11. Marking Diagram 24 1 Part Number Lot Number: Y is the last digit of the year of manufacture (0 to 9) M is the month of the year (1 to 9, O, N or D) DD is the day of the month (01 to 31) X is the control number SCM124×MF 3325 JAPAN YMDDX Branding Area 33 25

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 31 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 13. Design Notes This section also emplo ys the terminal notation system for pin names , described in the beginning of the previous section. 13.1. PCB Pattern Layout Figure 13-1 shows a schematic diagram of a motor driver circuit. The motor driver circuit consists of current paths carrying high frequencies and high voltages, which also bring about negative influences on IC operation, noise interference, and power dissipation. Therefore, PCB trace layouts and component placements play an important role in circuit designing. Current loops which carry high frequencies and high voltages should be as small and wide as you can, in order to maintain a low-impedance state. In addition, ground traces should be as wide and short as possible so that radiated EMI levels can be reduced. MIC1 VBB W LS3 V LS2 U LS1 MIC2 MIC3 26 M VDC High-frequency, high-voltage current loops should be as small and wide as possible. Ground traces should be wide and short. Figure 13-1. High-frequency, high-voltage current paths 13.2. Heatsink Mounting Considerations This section provides the guidelines for mounting a heatsink, as follows:

• It is recommended to use a pair of a metric screw of M3 and a plain washer of 7 mm (φ). Use a torque scre wdriver to tighten the screws. Tighten the two screws firstly up to about 30% of the maximum screw torque; then finally up to 100% of the prescribed maximum screw torque . Perform appropriate tightening within the range of screw torque defined in Section 4.
• When mounting a heatsink, it is recommended to use silicone greases. If a thermally-conductive sheet or an electrically insulating sheet is used, package cracks may be occured due to creases at screw tightening. Therefore, thorough evaluations should be conducted before using these materials.
• When applying a silicon grease, there must be no foreign substances between the IC and a heatsink. Extreme care should be taken not to apply a silicon grease onto any device pins as much as possible. The following requirements must be met for proper grease application:  Grease thickness: 100 µm  Heatsink flatness: ±100 µm  When applying a silicon grease to a heatsink, it should be applied within the area indicated in Figure 13-2, below. Heatsink Thermal silicone grease application area 3.13.1 37.6 Unit: mm 5.8

5.8 M3 M3

Figure 13-2. Recommended application area for thermal silicone grease 13.3. IC Characteristics Measurement Considerations When measuring the breakdown voltage and/or leakage current of the transistors incorporated in the IC, the gate and emitt er of each transistor should have the same potential. Moreover, care should be taken because the collectors are all internally connected to the VBB pin. The output (U, V, and W) pins are connected to the emitters of the corresponding high -side transistors; and the LSx pins are connected to the emitters of the low-side transistors. The gates of the high -side transistors are pulled down to the output (U, V, W) pins; similarly, the gates of the low -side transistors are pulled down to the COMx pins. Note that the output, LS, and COMx pins must be connected appropriately before measuring breakdown voltage and/or leak current. Otherwise the switching transistors may result in permanent damage. The figures below are the schematic circuit diagrams of a typical measurement circuit for breakdown voltage: Figure 13-3 shows the high -side transistor (Q1H) in U

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 33 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 β is the intercept of the linear approximate equation in the VCE(SAT) vs. IC curve. Figure 14-1. Linear approximate equation of VCE(SAT) vs. IC curve Table 14-1. Reference slopes (α) and intercepts (β) of linear approximate equation at 0 to 0.5 × IO in VCE(SAT)–IC curve Part Number 25°C 125°C α β α β SCM1261MF 0.108 0.831 0.036 1.359 SCM1242MF SCM1263MF SCM1243MF 0.093 0.694 0.060 0.974 SCM1265MF SCM1245MF 0.043 0.907 0.063 0.702 SCM1256MF SCM1246MF 0.046 0.739 0.031 0.991 14.2. GBT Switching Loss, PSW The switching loss in an IGBT can be calculated by Formula (5), letting IM be the effective current value of a motor: (5) where: fc is the PWM carrier frequency in Hz, VDC is the m ain power s upply voltage in V (i.e., the VBB pin input voltage), EON(IM) is the turn-on loss at IM in J, and EOFF(IM) is the turn-off loss at IM in J. For EON(IM) and EOFF(IM), see also Section 15.3.2. 14.3. Estimating Junction Temperature of IGBT The junction t emperature of an IGBT, T j, can be estimated with Formula (6), below: (6) Where R(j-c)Q is the junction-to-case thermal resistance of the IGBT product (°C/W), and TC is the case temperature (°C), measured at the point shown in Figure 3-1. y = 0.108x + 0.831 y = 0.036x + 1.359 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6 7 8 9 10 VCE(SAT) (V) IC (A) VCC=15V 75°C 125°C 25°C

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 34 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 15. Typical Characteristics 15.1. Transient Thermal Resistance Curves The f ollowing graphs represent transient thermal resistance (the ratios of transient thermal resistance), with steady-state thermal resistance = 1. 15.1.1. SCM1261MF 15.1.2. SCM1242MF, SCM1263MF, SCM1243MF 0.01 0.10 1.00 1 10 100 1000 10000 Ratio of Transient Thermal Resistance Time (ms) 0.01 0.10 1.00 1 10 100 1000 10000 Ratio of Transient Thermal Resistance Time (ms)

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 35 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 15.1.3. SCM1265MF, SCM1245MF 15.1.4. SCM1246MF, SCM1256MF 0.01 0.10 1.00 1 10 100 1000 10000 Ratio of Transient Thermal Resistance Time (ms) 0.01 0.10 1.00 1 10 100 1000 10000 Ratio of Transient Thermal Resistance Time (ms)

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 55 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 15.5. Short Circuit SOA (Safe Operating Area) Conditions: VDC ≤ 400 V, 13.5 V ≤ VCC ≤ 16.5 V, Tj = 125°C, 1 pulse. 15.5.1. SCM1261MF 15.5.2. SCM1242MF, SCM1263MF, SCM1243MF 100 150 200 0 1 2 3 4 5 Collector Current, IC(PEAK) (A) Pulse width (µs) Short Circuit SOA 100 150 200 250 0 1 2 3 4 5 Collector Current, IC(PEAK) (A) Pulse width (µs) Short Circuit SOA

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 56 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 15.5.3. SCM1265MF, SCM1245MF 15.5.4. SCM1256MF, SCM1246MF 100 150 200 250 300 0 1 2 3 4 5 Collector Current, IC(PEAK) (A) Pulse width (µs) Short Circuit SOA 100 150 200 250 300 350 400 0 1 2 3 4 5 Collector Current, IC(PEAK) (A) Pulse width (µs) Short Circuit SOA

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 58 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 VB1 FO1 OCP1 LIN1 COM1 HIN1 VCC1 HS1 VBB W LS3 V LS2 U LS1 VB2 FO2 OCP2 LIN2 COM2 HIN2 VCC2 HS2 VB3 FO3 OCP3 LIN3 COM3 HIN3 VCC3 HS3 R4 C20 R11 R12 R13 C13 C12/RT C11 C21 C14 C15 C16 C17 C18 C19 C23 R10 R14 SV4 SV1 C24 R15 C25 R16 SV2 SV3 C10 Figure16-3. Schematic circuit diagram of PCB pattern layout example

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 59 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 17. Typical Motor Driver Application This section contains information on the typical motor driver application listed in t he previous section , including a circuit diagram, specifications, and the bill of the materials used.

• Motor driver specifications IC SCM1242MF Main Supply Voltage, VDC 300VDC (Typ.) Output Power Rating 1.35 kW
• Circuit diagram See Figure16-3.
• Bill of materials Symbol Part type Ratings Symbol Part type Ratings C1 Electrolytic 47 μF, 50 V R1* Metal plate 27 mΩ, 2W C2 Electrolytic 47 μF, 50 V R2* Metal plate 27 mΩ, 2W C3 Electrolytic 47 μF, 50 V R3* Metal plate 27 mΩ, 2W C4 Electrolytic 100 μF, 50 V R4 General 4.7 kΩ, 1/8W C5 Ceramic 100 pF, 50 V R5 General 100 Ω, 1/8W C6 Ceramic 100 pF, 50 V R6 General 100 Ω, 1/8W C7 Ceramic 100 pF, 50 V R7 General 100 Ω, 1/8W C8 Ceramic 100 pF, 50 V R8 General 100 Ω, 1/8W C9 Ceramic 100 pF, 50 V R9 General 100 Ω, 1/8W C10 Ceramic 100 pF, 50 V R10 General 100 Ω, 1/8W C11 Ceramic 0.01 μF, 50 V R11 General 100 Ω, 1/8W C12/RT Ceramic 0.01 μF, 50 V R12 General 100 Ω, 1/8W C13 Ceramic 0.01 μF, 50 V R13 General 100 Ω, 1/8W C14 Ceramic 0.1 μF, 50 V R14* General Open C15 Ceramic 0.1 μF, 50 V R15* General Open C16 Ceramic 0.1 μF, 50 V R16* General Open C17 Ceramic 0.1 μF, 50 V D1 General 1 A, 50 V C18 Ceramic 0.1 μF, 50 V D2 General 1 A, 50 V C19 Ceramic 0.1 μF, 50 V D3 General 1 A, 50 V C20 Ceramic 0.01 μF, 50 V D4 Zener VZ = 20 V, 0.5 W C21 Film 0.1 μF, 630 V D5 General Open C22* Ceramic 0.1 μF, 50 V SV1 Pin header Equiv. to MA04-1 C23* Ceramic 0.1 μF, 50 V SV2 Pin header Equiv. to MA10-1 C24* Ceramic 0.1 μF, 50 V SV3 Connector Equiv. to B2P3-VH C25 Ceramic Open SV4 Connector Equiv. to B3P5-VH IPM1 IC SCM1242MF * Refers to a part that requires adjustment based on operation performance in an actual application.

SCM1200MF-DSJ Rev.1.1 SANKEN ELECTRIC CO.,LTD. 60 Feb. 19, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO.,LTD. 2015 IMPORTANT NOTES

• All data, illustrations, graphs, tables and any other information included in this document as to Sanken’s products listed herein (the “Sanken Products”) are current as of the date this document is issued . All contents in this document are subject to any change without notice due to improvement, etc. Please make sure that the contents set forth in this document reflect the latest revisions before use.
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