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Technical content

Features

  • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting
  • [MOSFET] • Low ON-resistance • Ultrahigh-speed switching • 4V drive
  • [SBD] • Short reverse recovery time • Low forward voltage Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain to Source Voltage V DSS 30 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D 1.6 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 6.4 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1unit 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +125 °C [SBD] Repetitive Peak Reverse Voltage V RRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V Average Output Current IO 0.5 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 3 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7028-003 1.6 1.6 1.50.05 0.5 0.05 0.560.25 0.2 0.2 1 32 64 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SCH6 SCH2825-TL-E Product & Package Information
  • Package : SCH6
  • JEITA, JEDEC : SOT-563
  • Minimum Packing Quantity : 5,000 pcs./reel Packing Type : TL Marking Electrical Connection 654 123 TL XA LOT No. LOT No. 80713 TKIM TC-00002992/62712TKIM/D1207PE TIIM TC-00001031 No. A1006-1/6 http://onsemi.com Semiconductor Components Industries, LLC, 2013 August, 2013 SCH2825 N-Channel Power MOSFET 30V, 1.6A, 180mΩ, Single SCH6 with Schottky Diode Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max [MOSFET] Drain to Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS V DS=30V, VGS=0V 1 μA Gate to Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=800mA 0.6 1.0 S Static Drain to Source On-State Resistance RDS(on)1 I D=800mA, VGS=10V 135 180 m Ω RDS(on)2 I D=400mA, VGS=4V 230 330 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 88 pF Output Capacitance Coss 19 pF Reverse Transfer Capacitance Crss 11 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 3.4 ns Rise Time tr 3.5 ns Turn-OFF Delay Time td(off) 10.6 ns Fall Time tf 4.0 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.6A 2.0 nC Gate to Source Charge Qgs 0.33 nC Gate to Drain “Miller” Charge Qgd 0.29 nC Diode Forward Voltage VSD IS=1.6A, VGS=0V 0.82 1.2 V [SBD] Reverse Voltage V R IR=0.5mA 30 V Forward Voltage V F IF=0.5A 0.42 0.48 V Reverse Current I R VR=15V 120 μA Interterminal Capacitance C V R=10V, f=1MHz 13 pF Reverse Recovery Time t rr IF=IR=100mA, See specifi ed Test Circuit. 10 ns Switching Time Test Circuit t rr Test Circuit (MOSFET) (SBD)

Ordering Information

Device Package Shipping memo SCH2825-TL-E SCH6 5,000pcs./reel Pb Free Duty≤10% 50Ω 100Ω 10Ω --5V trr 10μs 100mA100mA 10mA PW=10μs D.C.≤1% P.G 50Ω G S D ID=800mA RL=18.75Ω VDD=15V VOUT SCH2825 VIN 10V VIN SCH2825 No. A1006-2/6

Drain Current, ID -- A Drain to Source V oltage, VDS -- V Drain Current, ID -- A Gate to Source V oltage, VGS -- V 0.2 1.2 0.8 1.6 0.6 0.4 1.4 1.0 1.8 0.2 1.2 0.8 1.6 0.6 0.4 1.4 1.0 2.0 1.8 IT13107 IT13108 Ta=75 --25 VDS=10V 15.0V 4.0V 8.0V 6.0V 10.0V VGS=2.5V 3.0V 3.5V RDS(on) -- TaRDS(on) -- VGS Static Drain to Source On-State Resistance, RDS(on) -- mΩ Static Drain to Source On-State Resistance, RDS(on) -- mΩ Gate to Source V oltage, VGS -- V Ambient Temperature, Ta -- °C IT13132 02468 1 6 10 12 14 IT13131 390 150 120 180 240 300 210 270 330 360 390 150 120 180 240 300 210 270 330 360 Ta=25°C - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 VGS=10V , ID=0.8A VGS=4V , I D=0.4A ID=0.4A 0.8A [MOSFET] [MOSFET] [MOSFET][MOSFET] IS -- VSDyfs -- ID Forward Transfer Admittance, yfs -- S Drain Current, ID -- A Source Current, IS -- A Diode Forward V oltage, VSD -- V SW Time -- ID Ciss, Coss, Crss -- VDS Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF Drain Current, ID -- A Drain to Source V oltage, VDS -- V IT13111 1.0 IT13113 23 50.1 1.0 35 2 7 td(on) td(off) tf tr VDD=15V VGS=10V 0.001 1.0 0.0123 5 7 2 0.135 7 2 1.035 7 0.1 0.01 VDS=10V 25°CTa= --25 75°C 01 0 3 0 15 2052 5 100 IT13114 Ciss Coss Crss f=1MHz IT13112 0.001 0.01 0.1 1.0

2 VGS=0V

Ta= --25 [MOSFET] [MOSFET] [MOSFET] [MOSFET] SCH2825 No. A1006-3/6

Drain to Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC Gate to Source V oltage, VGS -- V IT13133 VDS=10V ID=1.6A IT13134 0.1 1.0 0.01 223 5 723 5 7 1.0 235 7 100.1 0.1 Operation in this area is limited by RDS(on). 100ms 100 μs 10msDC operation (Ta=25 °C) 1ms IDP=6.4A(PW≤10μs) ID=1.6A Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 20 40 0.2 0.1 0.4 0.3 0.6 0.5 0.7 60 80 100 120 140 160 IT13135 When mounted on ceramic substrate (900mm 2✕0.8mm) 1unit [MOSFET] [MOSFET] [MOSFET] 1.0 0.1 0.01 0.3 0.40.1 0.2 0.60.5 IF -- VF Ta=125 100 IT07927 [SBD] Forward V oltage, VF -- V Forward Current, IF -- A IT07928 1.0 100 1000 100000 10000 51 0 3 0 15 20 25 IR -- VR Ta=125°C 25°C 50°C 75°C 100°C [SBD] Reverse V oltage, VR -- V Reverse Current, IR -- μA 0.1 0.2 0.30 0.35 0.25 0.15 0.10 0.05 0.20 0.3 0.4 0.5 0.6 PF(AV) -- IO IT08187 (2) (4) (3)(1) [SBD] Average Output Current, IO -- A (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° Average Forward Power Dissipation, PF(A V) -- W 180° 360° Sine wave θ 360° Rectangular wave 100 0.1 1.0 23 5 7 1023 5 23 5 77 C -- VR IT07891 f=1MHz [SBD] Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF IS 20ms t 7 0.01 23 7 0.1 52 3 7 1.052 3 3.0 3.5 2.0 1.0 2.5 1.5 0.5 ID00338 IFSM -- t [SBD] IS 20ms t Time, t -- s Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave SCH2825 No. A1006-4/6

Outline Drawing Land Pattern Example SCH2825-TL-E Mass (g) Unit 0.004 * For reference mm Unit: mm 0.4 0.3 0.5 0.5 1.4 SCH2825 No. A1006-5/6

Note on usage : Since the SCH2825 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. SCH2825 PS No. A1006-6/6