SCH2819 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting.
  • [MOSFET]
  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive.
  • [SBD]
  • Short reverse recovery time.
  • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±12 V Drain Current (DC) I D 1.5 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 6 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage V RRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V Average Output Current I O 0.5 A Surge Forward Current I FSM 50Hz sine wave, 1 cycle 3 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : QU SCH2819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

Applications

© 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Publication Order Number: SCH2819/D

Rev.0 I Page 2 of 6 I www.onsemi.com Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 30 V Zero-Gate Voltage Drain Current I DSS VDS =30V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =800mA 1.3 2.2 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =800mA, VGS =4V 165 215 m Ω R DS (on)2 I D =400mA, VGS =2.5V 210 295 m Ω Input Capacitance Ciss V DS =10V, f=1MHz 130 pF Output Capacitance Coss V DS =10V, f=1MHz 22 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 16 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 9 ns Rise Time t r See specified Test Circuit. 20 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 23 ns Fall Time t f See specified Test Circuit. 29 ns Total Gate Charge Qg V DS =10V, VGS =4V, ID =1.5A 2.2 nC Gate-to-Source Charge Qgs V DS =10V, VGS =4V, ID =1.5A 0.52 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =4V, ID =1.5A 0.52 nC Diode Forward Voltage V SD IS=1.5A, VGS =0V 0.9 1.2 V [SBD] Reverse Voltage V R IR =0.5mA 30 V Forward Voltage V F IF=0.5A 0.42 0.48 V Reverse Current I R VR =15V 120 µA Interterminal Capacitance C V R =10V, f=1MHz 13 pF Reverse Recovery Time t rr IF=IR =100mA, See specified Test Circuit. 10 ns Package Dimensions Electrical Connection unit : mm 7028-003 1.6 1.6 1.50.05 0.5 0.05 0.560.25 0.2 0.2 1 32 64 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 654 123 Top view 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain

Rev.0 I Page 3 of 6 I www.onsemi.com Switching Time Test Circuit t rr Test Circuit [MOSFET] [SBD] Duty≤10% 50Ω 100Ω 10Ω --5V trr 10µs 100mA100mA 10mA PW=10 µs D.C.≤1% P.G 50Ω G S D ID =800mA R L=18.75Ω VDD =15V VOUT SCH2819 VIN VIN R DS (on) -- VGS IT06104 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.2 100 200 300 400 500 150 250 350 450 ID -- VDS IT06102 02468 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 --60 - -40 - -20 0 20 40 60 80 100 120 140 160 ID -- VGS IT06103 R DS (on) -- Ta IT06105 100 200 300 400 500 150 250 350 450 V GS =1.0V 4.0V 3.0V 2.5V 1.5V V DS =10V --25 Ta= --25 Ta= Ta=25°C 400mA ID =800mA ID=400mA, V GS =2.5V ID =800mA, V GS =4.0V [MOSFET] [MOSFET] [MOSFET][MOSFET] Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ

Rev.0 I Page 4 of 6 I www.onsemi.com 0.01 0.123 5 7 1.023 5 7 23 5 7 10 1000 100 1.0 SW Time -- ID IT06108 IT06106 0.1 1.023 5 70.01 23 5 7 23 5 1.0 0.1 yfs -- ID Ciss, Coss, Crss -- VDS IT06107 0.01 0.1 1.0 IS -- VSD 05 1 0 15 20 25 30 IT06109 100 1000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS -- Qg IT06110 20 40 0.2 0.4 0.6 0.8 60 80 100 120 140 160 PD -- Ta IT09564 A S O 1.0 0.1 0.01 1.0 23 5 7 100.1 23 5 70.01 23 5 7 23 5 IT09563 V DS =10V 75°C 25°C Ta= -- 25°C V GS =0V --25 Ta= V DD =15V V GS =4V td(on) td(off) tr tf f=1MHz Coss Crss Ciss V DS =10V ID =1.5A <10µsIDP =6A ID =1.5A 100 µs1ms 10ms 100msDC operation (Ta=25 °C)Operation in this area is limited by RDS (on). [MOSFET] [MOSFET] [MOSFET] [MOSFET] [MOSFET] [MOSFET] [MOSFET] Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Mounted on a ceramic board (900mm 2✕0.8mm) 1unit Ta=25°C Single pulse Mounted on a ceramic board (900mm 2✕0.8mm) 1unit

Rev.0 I Page 5 of 6 I www.onsemi.com 100 0.1 1.023 5 7 1023 5 23 5 77 C -- VR 0.1 0.2 0.30 0.35 0.25 0.15 0.10 0.05 0.20 0.3 0.4 0.5 0.6 PF(AV) -- IO IT08187 IT07891 (2) (4)(3)(1) f=1MHz 1.0 0.1 0.01 0.3 0.40.1 0.2 0.60.5 IF -- VF Ta=125 100 IT07927 IT07928 1.0 100 1000 100000 10000 51 0 3 0 15 20 25 IR -- VR Ta=125°C 25°C 50°C 75°C 100°C IS 20ms t 7 0.01 23 7 0.1 52 3 7 1.052 3 3.0 3.5 2.0 1.0 2.5 1.5 0.5 ID00338 IFSM -- t [SBD] [SBD] [SBD][SBD] [SBD] Forward V oltage, VF -- V Forward Current, IF -- A Reverse V oltage, VR -- V Reverse Current, IR -- µA A verage Output Current, IO -- A (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° A verage Forward Power Dissipation, PF(A V) -- W 180° 360° Sine wave θ 360° Rectangular wave IS 20ms t Tim e, t -- s Surge Forward Current, IFSM (Peak) -- A Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF Current waveform 50Hz sine wave

Rev.0 I Page 6 of 6 I www.onsemi.com SCH2819/D /K4C/K49/K54/K45/K52 /K41 /K54/K55/K52/K45 /K46/K55/K4C/K46/K49/K4C/K4C/K4D/K45/K4E/K54 /K3A /K4C/K69/K74/K65/K72/K61/K74/K75/K72/K65 /K44/K69/K73/K74/K72/K69/K62/K75/K74/K69/K6F/K6E /K43/K65/K6E/K74/K65/K72 /K66/K6F/K72 /K4F/K4E /K53/K65/K6D/K69/K63/K6F/K6E/K64/K75/K63/K74/K6F/K72 /K50/K2E /K4F /K2E /K42 /K6F /K78 /K35 /K31 /K36 /K33 /K2C /K44/K65/K6E/K76/K65/K72 /K2C /K43/K6F/K6C/K6F/K72/K61/K64/K6F /K38/K30/K32/K31 /K37 /K55/K53/K41 /K50/K68/K6F/K6E/K65 /K3A/K33 /K30/K33 /K2D /K36/K37/K35 /K2D/K32/K31 /K37/K35 /K6F/K72 /K38/K30/K30 /K2D/K33/K34/K34 /K2D/K33/K38/K36/K30 /K54 /K6F/K6C/K6C /K46 /K72/K65/K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61 /K46/K61 /K78/K3A /K33/K30/K33 /K2D /K36/K37/K35 /K2D/K32/K31 /K37/K36 /K6F/K72 /K38/K30/K30 /K2D/K33/K34/K34 /K2D/K33/K38/K36/K37 /K54 /K6F/K6C/K6C /K46 /K72/K65/K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61 /K45/K6D/K61/K69/K6C /K3A /K6F/K72/K64/K65/K72/K6C/K69/K74/K40/K6F/K6E/K73/K65/K6D/K69/K2E/K63/K6F/K6D /K4E/K2E /K41/K6D/K65/K72/K69/K63/K61/K6E /K54 /K65/K63/K68/K6E/K69/K63/K61/K6C /K53/K75/K70/K70/K6F/K72 /K74 /K3A/K38/K30 /K30 /K2D /K32 /K38/K32 /K2D /K39 /K38/K35 /K35/K54 /K6F /K6C /K6C/K46 /K72 /K65 /K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61/K2E /K45/K75/K72/K6F/K70/K65/K2C /K4D/K69/K64/K64/K6C /K65/K45 /K61 /K73 /K74/K61 /K6E /K64/K41 /K66 /K72 /K69 /K63 /K61/K54 /K65 /K63 /K68 /K6E /K69 /K63 /K61 /K6C/K53 /K75 /K70 /K70 /K6F /K72 /K74 /K3A /K50 /K68/K6F/K6E/K65/K3A /K34/K32/K31 /K33/K33 /K37/K39 /K30 /K32/K39/K31/K30 /K4A /K61/K70/K61/K6E /K43/K75/K73/K74/K6F/K6D/K65/K72 /K46/K6F/K63/K75/K73 /K43/K65/K6E/K74/K65/K72 /K50 /K68/K6F/K6E/K65/K3A /K38/K31/K2D/K33 /K2D /K35/K37/K37/K33 /K2D/K33/K38 /K35/K30 /K4F/K4E /K53/K65/K6D/K69/K63/K6F/K6E/K64/K75/K63/K74/K6F/K72 /K57/K65/K62/K73/K69/K74/K65 /K3A www.onsemi.com /K4F/K72/K64/K65/K72 /K4C/K69/K74/K65/K72/K61/K74/K75/K72/K65 /K3A/K68 /K74/K74 /K70/K3A /K2F/K2F /K77/K77/K77 /K2E/K6F /K6E/K73/K65/K6D/K69/K2E/K63/K6F/K6D/K2F/K6F/K72/K64/K65/K72/K6C/K69/K74 /K46/K6F/K72 /K61/K64/K64/K69/K74/K69/K6F /K6E/K61/K6C /K69/K6E/K66/K6F/K72/K6D/K61/K74/K69/K6F/K6E/K2C /K70/K6C/K65/K61/K73/K65 /K63/K6F/K6E/K74/K61/K63/K74 /K79/K6F/K75/K72 /K6C/K6F/K63/K61/K6C /K53/K61/K6C/K65/K73 /K52/K65/K70/K72/K65/K73/K65/K6E/K74/K61/K74/K69/K76/K65 /K50/K55/K42/K4C/K49/K43/K41 /K54 /K49/K4F/K4E /K4F/K52/K44/K45/K52/K49/K4E/K47 /K49/K4E/K46 /K4F/K52/K4D/K41 /K54/K49/K4F/K4E ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s technical experts. SCILLC shall not be held liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affi rmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.