SCH2809

SCH2809 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

• Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage V DSS --12 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D --1.2 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -4.8 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage V RRM 15 V Nonrepetitive Peak Reverse Surge Voltage VRSM 15 V Average Output Current I O 0.5 A Surge Forward Current I FSM 50Hz sine wave, 1 cycle 3 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : QJ © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Publication Order Number: SCH2809/D

Rev.0 I Page 2 of 6 I www.onsemi.com Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0V - -12 V Zero-Gate Voltage Drain Current I DSS VDS =- -12V, VGS =0V - -10 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =- -6V, ID =- -1mA - -0.3 - -1.0 V Forward Transfer Admittance yfs VDS =- -6V, ID =- -0.8A 1.08 1.8 S R DS (on)1 I D =- -0.6A, VGS =--4.5V 235 310 m Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =- -0.3A, VGS =--2.5V 335 470 m Ω R DS (on)3 I D =- -0.1A, VGS =--1.8V 445 670 m Ω Input Capacitance Ciss V DS =- -6V, f=1MHz 160 pF Output Capacitance Coss V DS =- -6V, f=1MHz 45 pF Reverse Transfer Capacitance Crss V DS =- -6V, f=1MHz 35 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 11 ns Rise Time t r See specified Test Circuit. 45 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 29 ns Fall Time t f See specified Test Circuit. 30 ns Total Gate Charge Qg V DS =- -6V, VGS =- -4.5V, ID =- -1.2A 2.6 nC Gate-to-Source Charge Qgs V DS =- -6V, VGS =- -4.5V, ID =- -1.2A 0.25 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -6V, VGS =- -4.5V, ID =- -1.2A 0.65 nC Diode Forward Voltage V SD IS=- -1.2A, VGS =0V - -0.92 - -1.5 V [SBD] Reverse Voltage V R IR =0.5mA 15 V Forward Voltage V F IF=0.5A 0.4 0.46 V Reverse Current I R VR =6V 90 µA Interterminal Capacitance C V R =10V, f=1MHz 13 pF Reverse Recovery Time t rr IF=IR =100mA, See specified Test Circuit. 10 ns Package Dimensions Electrical Connection unit : mm 7028-003 64 12 3 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain Top view 1.6 1.6 1.50.05 0.5 0.05 0.560.25 0.2 0.2 1 32 64 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6

Rev.0 I Page 3 of 6 I www.onsemi.com PW=10 µs D.C.≤1% P.G 50Ω G S D ID = --0.8A R L=7.5Ω VDD = --6V VOUT SCH2809 VIN --4.5V VIN Duty≤10% 50Ω 100Ω 10Ω --5V trr 100mA100mA 10mA 10µs Switching Time Test Circuit t rr Test Circuit [MOSFET] [SBD] R DS (on) -- VGS 0- -0.1 --0.3 --0.6 --0.9 --1.2 --1.5 --0.5 --1.0 --1.5 --2.0 ID -- VDS IT07144 ID -- VGS IT04354 R DS (on) -- Ta V GS = --1.0V --1.5V --2.5V --1.8V --4.5V --3. --3.5V V DS = --6V --25 Ta=75 Ta= --25 Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A --60 - -40 - -20 0 20 40 60 80 100 120 140 160 IT07142 200 100 400 600 300 500 700 800 IT07143 200 400 600 800 100 300 500 700 Ta=25°C --0.6A ID = --0.4A ID = --0.1A, V GS = --1.8V ID = --0.3A, V GS = --2.5V ID = --0.6A, VGS = --4.5V [MOSFET ] [MOSFET ] [MOSFET ] [MOSFET ]

Rev.0 I Page 4 of 6 I www.onsemi.com 100 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 VGS -- Qg IT04361 SW Time -- ID IT04359 Ciss, Coss, Crss -- VDS IT04357 0.1 1.0 100 yfs -- ID IT04358 --0.1 --1.0 IS -- VSD IT04360 V DS = --6V ID = --1.2A 75°C 25°C Ta= --25 V DS = --6V V GS =0V --25 Ta =75 f=1MHz Ciss Coss Crss V DD = --6V V GS = --4.5V td(on) td(off) tr tf Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A [MOSFET ] [MOSFET ] [MOSFET ] [MOSFET ] [MOSFET ] A S O [MOSFET] Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A --0.1 --1.0 --10 --0.01 --1.0 23 5 7 --10--0.1 23 5 7--0.01 23 5 7 23 IT11233 ≤10µsIDP = --4.8A ID = --1.2A 100µs1ms 10ms 100msDC operation (Ta=25 °C)Operation in this area is limited by RDS (on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 20 40 0.2 0.4 0.6 0.8 60 80 100 120 140 160 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Mounted on a ceramic board (900mm 2✕0.8mm) 1unit IT11234 [MOSFET ] Total Gate Charge, Qg -- nC

Rev.0 I Page 5 of 6 I www.onsemi.com 1.0 0.1 0.01 0.3 0.40.1 0.2 0.5 IF -- VF Ta=125 100 IT06804 IT06806 IT06805 IT06807 1.0 100 1000 10000 51 0 1 5 IR -- VR Ta=125°C 25°C 50°C 75°C 100°C 1.0 10 35 7 2 3 C -- VR 180° 360° θ 360° 0.2 0.8 0.9 0.6 0.4 0.2 0.7 0.5 0.3 0.1 PF(AV) -- IO [SBD] [SBD] [SBD][SBD] [SBD] IS 20ms t 7 0.01 23 7 0.1 52 3 7 1.052 3 3.0 3.5 2.0 1.0 2.5 1.5 0.5 ID00338 IFSM -- t Tim e, t -- s Surge Forward Current, IFSM (Peak) -- A Forward V oltage, VF -- V Forward Current, IF -- A Reverse V oltage, VR -- V Reverse Current, IR -- µA A verage Output Current, IO -- A (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° A verage Forward Power Dissipation, PF(A V) -- W Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF Rectangular wave Sine wave Current waveform 50Hz sine wave

Rev.0 I Page 6 of 6 I www.onsemi.com SCH2809/D /K4C/K49/K54/K45/K52 /K41 /K54/K55/K52/K45 /K46/K55/K4C/K46/K49/K4C/K4C/K4D/K45/K4E/K54 /K3A /K4C/K69/K74/K65/K72/K61/K74/K75/K72/K65 /K44/K69/K73/K74/K72/K69/K62/K75/K74/K69/K6F/K6E /K43/K65/K6E/K74/K65/K72 /K66/K6F/K72 /K4F/K4E /K53/K65/K6D/K69/K63/K6F/K6E/K64/K75/K63/K74/K6F/K72 /K50/K2E /K4F /K2E /K42 /K6F /K78 /K35 /K31 /K36 /K33 /K2C /K44/K65/K6E/K76/K65/K72 /K2C /K43/K6F/K6C/K6F/K72/K61/K64/K6F /K38/K30/K32/K31 /K37 /K55/K53/K41 /K50/K68/K6F/K6E/K65 /K3A/K33 /K30/K33 /K2D /K36/K37/K35 /K2D/K32/K31 /K37/K35 /K6F/K72 /K38/K30/K30 /K2D/K33/K34/K34 /K2D/K33/K38/K36/K30 /K54 /K6F/K6C/K6C /K46 /K72/K65/K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61 /K46/K61 /K78/K3A /K33/K30/K33 /K2D /K36/K37/K35 /K2D/K32/K31 /K37/K36 /K6F/K72 /K38/K30/K30 /K2D/K33/K34/K34 /K2D/K33/K38/K36/K37 /K54 /K6F/K6C/K6C /K46 /K72/K65/K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61 /K45/K6D/K61/K69/K6C /K3A /K6F/K72/K64/K65/K72/K6C/K69/K74/K40/K6F/K6E/K73/K65/K6D/K69/K2E/K63/K6F/K6D /K4E/K2E /K41/K6D/K65/K72/K69/K63/K61/K6E /K54 /K65/K63/K68/K6E/K69/K63/K61/K6C /K53/K75/K70/K70/K6F/K72 /K74 /K3A/K38/K30 /K30 /K2D /K32 /K38/K32 /K2D /K39 /K38/K35 /K35/K54 /K6F /K6C /K6C/K46 /K72 /K65 /K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61/K2E /K45/K75/K72/K6F/K70/K65/K2C /K4D/K69/K64/K64/K6C /K65/K45 /K61 /K73 /K74/K61 /K6E /K64/K41 /K66 /K72 /K69 /K63 /K61/K54 /K65 /K63 /K68 /K6E /K69 /K63 /K61 /K6C/K53 /K75 /K70 /K70 /K6F /K72 /K74 /K3A /K50 /K68/K6F/K6E/K65/K3A /K34/K32/K31 /K33/K33 /K37/K39 /K30 /K32/K39/K31/K30 /K4A /K61/K70/K61/K6E /K43/K75/K73/K74/K6F/K6D/K65/K72 /K46/K6F/K63/K75/K73 /K43/K65/K6E/K74/K65/K72 /K50 /K68/K6F/K6E/K65/K3A /K38/K31/K2D/K33 /K2D /K35/K37/K37/K33 /K2D/K33/K38 /K35/K30 /K4F/K4E /K53/K65/K6D/K69/K63/K6F/K6E/K64/K75/K63/K74/K6F/K72 /K57/K65/K62/K73/K69/K74/K65 /K3A www.onsemi.com /K4F/K72/K64/K65/K72 /K4C/K69/K74/K65/K72/K61/K74/K75/K72/K65 /K3A/K68 /K74/K74 /K70/K3A /K2F/K2F /K77/K77/K77 /K2E/K6F /K6E/K73/K65/K6D/K69/K2E/K63/K6F/K6D/K2F/K6F/K72/K64/K65/K72/K6C/K69/K74 /K46/K6F/K72 /K61/K64/K64/K69/K74/K69/K6F /K6E/K61/K6C /K69/K6E/K66/K6F/K72/K6D/K61/K74/K69/K6F/K6E/K2C /K70/K6C/K65/K61/K73/K65 /K63/K6F/K6E/K74/K61/K63/K74 /K79/K6F/K75/K72 /K6C/K6F/K63/K61/K6C /K53/K61/K6C/K65/K73 /K52/K65/K70/K72/K65/K73/K65/K6E/K74/K61/K74/K69/K76/K65 /K50/K55/K42/K4C/K49/K43/K41 /K54 /K49/K4F/K4E /K4F/K52/K44/K45/K52/K49/K4E/K47 /K49/K4E/K46 /K4F/K52/K4D/K41 /K54/K49/K4F/K4E ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s technical experts. SCILLC shall not be held liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affi rmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.