SCH2805

SCH2805 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

• Composite type with a P-channel sillicon MOSFET (MCH3314) and a Schottky barrier diode (SB0105) contained in one package facilitating high-density mounting. [MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive. [SBD]
• Short reverse recovery time.
• Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage V DSS --60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D --0.5 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -2 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage V RRM 50 V Nonrepetitive Peak Reverse Surge Voltage VRSM 50 V Average Output Current I O 100 mA Surge Forward Current I FSM 50Hz sine wave, 1 cycle 2 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : QE © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Publication Order Number: SCH2805/D

Rev.0 I Page 2 of 6 I www.onsemi.com Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0 - -60 V Zero-Gate Voltage Drain Current I DSS VDS =- -60V, VGS =0 - -1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.2 - -2.6 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -0.3A 400 670 mS Static Drain-to-Source On-State Resistance R DS (on)1 I D =- -0.3A, VGS =--10V 1.3 1.7 Ω R DS (on)2 I D =- -0.2A, VGS =--4V 1.6 2.3 Ω Input Capacitance Ciss V DS =- -20V, f=1MHz 73 pF Output Capacitance Coss V DS =- -20V, f=1MHz 7 pF Reverse Transfer Capacitance Crss V DS =- -20V, f=1MHz 4 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 6 ns Rise Time t r See specified Test Circuit. 3.5 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 12.5 ns Fall Time t f See specified Test Circuit. 3 ns Total Gate Charge Qg V DS =- -10V, VGS =- -10V, ID =- -0.5A 2.4 nC Gate-to-Source Charge Qgs V DS =- -10V, VGS =- -10V, ID =- -0.5A 0.6 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -10V, VGS =- -10V, ID =- -0.5A 0.2 nC Diode Forward Voltage V SD IS=- -0.5A, VGS =0 - -0.88 - -1.5 V [SBD] Reverse Voltage V R IR =50µA5 0 V Forward Voltage VF1I F=70mA 0.52 0.55 V VF2I F=100mA 0.8 0.85 V Reverse Current I R VR =25V 1 µA Interterminal Capacitance C V R =10V, f=1MHz 8 pF Reverse Recovery Time t rr IF=IR =100mA, See specified Test Circuit. 10 ns Package Dimensions Electrical Connection unit : mm 2230 12 3 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain Top view 1.6 1.6 1.50.05 0.5 0.05 0.56 0.25 0.2 0.15 1 32 64 5 Top View Side View Side View Bottom View 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6

Rev.0 I Page 3 of 6 I www.onsemi.com PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --0.3A R L=100Ω VDD = --30V VOUT SCH2805 VIN --10V VIN Duty≤10% 50Ω 100Ω 10Ω --5V trr 100mA100mA 10mA 10µs Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] --1.0 --0.8 --0.6 --0.4 --0.2 --0.6 --0.5 ID -- VDS --0.4 --0.3 --0.2 --0.1 ID -- VGS --25 --25 °CV DS = --10V Ta=75 IT03941 IT03942 --3.0V --4.0V --6 .0V--10.0V --3.5V V GS = --2.5V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 R DS (on) -- VGS IT03943 Ta=25°C --40 --20 0 20--60 40 60 80 100 120 140 160 R DS (on) -- Ta IT06910 ID= --0.2A, V GS= --4V ID= --0.3A, V GS= --10V ID = --0.2A --0.3A Ta=75 Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C [MOSFET] [MOSFET] [MOSFET] [MOSFET]

Rev.0 I Page 4 of 6 I www.onsemi.com [MOSFET] [MOSFET] IT06912 IT06911 PD -- Ta 0.8 0.6 0.4 0.2 20 40 60 80 100 120 140 160 --0.01 --0.1 A S O --0.01 --1.0 --0.123 5 7 --1.023 5 7 --1023 5 7 --10023 5 7 <10µs 1ms 10ms 100msDC operation 100 µs [MOSFET] IT03949 VGS -- Qg --7 --6 --5 --4 --3 --1 --2 --10 --9 --8 V DS = --10V ID = --0.5A IDP = --2A ID = --0.5A Operation in this area is limited by RDS (on). Mounted on a ceramic board (900mm 2✕0.8mm) 1unit Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit Total Gate Charge, Qg -- nC Ambient Temperature, Ta -- °C Drain-to-Source V oltage, VDS -- V Gate-to-Source V oltage, VGS -- VAllowable Power Dissipation, PD -- W Drain Current, ID -- A 1.0 100 SW Time -- ID V DD = --30V V GS = --10V IT03947 1.0 100 Ciss, Coss, Crss -- VDS f=1MHzCiss Coss Crss IT03948 [MOSFET] [MOSFET] td(on) tr tf td(off) IF -- VSD--1.0 --0.01 --0.1 V GS =0 --25 Ta=75 IT03946 [MOSFET] yfs -- ID10000 100 1000 Ta= --25°C 25°C 75°C IT03945 [MOSFET] V DS = --10V Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- mS Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF

Rev.0 I Page 5 of 6 I www.onsemi.com 2 1.032 3 572 0.135 70.017 0.4 0.8 2.0 2.4 1.2 1.6 2.8 ID00264 IFSM -- t IS 20ms t [SBD] Time, t -- s Surge Forward Current, IFSM (Peak) -- A Current waveform 50Hz sine wave 0.02 0.04 0.06 0.08 0.10 1.0 23 5 71.0 10 23 5 7 ID00263 C -- VR f=1MHz 180° 360° θ 360° (3) (1) PF(AV) -- IO IT03952 (2)(4) 10 20 30 40 50 60 1000 100 1.0 0.1 0.01 ID00261 IR -- VR ID00260 IF -- VF Ta=125°C 100°C 25°C 50°C 75°C 1.0 100 Ta= 125 [SBD] Forward V oltage, VF -- V Forward Current, IF -- mA [SBD] Reverse V oltage, VR -- V Reverse Current, IR -- A [SBD] A verage Forward Current, IO -- A (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° A verage Forward Power Dissipation, PF(A V) -- W Rectangular wave Sine wave [SBD] Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF

Rev.0 I Page 6 of 6 I www.onsemi.com SCH2805/D /K4C/K49/K54/K45/K52 /K41 /K54/K55/K52/K45 /K46/K55/K4C/K46/K49/K4C/K4C/K4D/K45/K4E/K54 /K3A /K4C/K69/K74/K65/K72/K61/K74/K75/K72/K65 /K44/K69/K73/K74/K72/K69/K62/K75/K74/K69/K6F/K6E /K43/K65/K6E/K74/K65/K72 /K66/K6F/K72 /K4F/K4E /K53/K65/K6D/K69/K63/K6F/K6E/K64/K75/K63/K74/K6F/K72 /K50/K2E /K4F /K2E /K42 /K6F /K78 /K35 /K31 /K36 /K33 /K2C /K44/K65/K6E/K76/K65/K72 /K2C /K43/K6F/K6C/K6F/K72/K61/K64/K6F /K38/K30/K32/K31 /K37 /K55/K53/K41 /K50/K68/K6F/K6E/K65 /K3A/K33 /K30/K33 /K2D /K36/K37/K35 /K2D/K32/K31 /K37/K35 /K6F/K72 /K38/K30/K30 /K2D/K33/K34/K34 /K2D/K33/K38/K36/K30 /K54 /K6F/K6C/K6C /K46 /K72/K65/K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61 /K46/K61 /K78/K3A /K33/K30/K33 /K2D /K36/K37/K35 /K2D/K32/K31 /K37/K36 /K6F/K72 /K38/K30/K30 /K2D/K33/K34/K34 /K2D/K33/K38/K36/K37 /K54 /K6F/K6C/K6C /K46 /K72/K65/K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61 /K45/K6D/K61/K69/K6C /K3A /K6F/K72/K64/K65/K72/K6C/K69/K74/K40/K6F/K6E/K73/K65/K6D/K69/K2E/K63/K6F/K6D /K4E/K2E /K41/K6D/K65/K72/K69/K63/K61/K6E /K54 /K65/K63/K68/K6E/K69/K63/K61/K6C /K53/K75/K70/K70/K6F/K72 /K74 /K3A/K38/K30 /K30 /K2D /K32 /K38/K32 /K2D /K39 /K38/K35 /K35/K54 /K6F /K6C /K6C/K46 /K72 /K65 /K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61/K2E /K45/K75/K72/K6F/K70/K65/K2C /K4D/K69/K64/K64/K6C /K65/K45 /K61 /K73 /K74/K61 /K6E /K64/K41 /K66 /K72 /K69 /K63 /K61/K54 /K65 /K63 /K68 /K6E /K69 /K63 /K61 /K6C/K53 /K75 /K70 /K70 /K6F /K72 /K74 /K3A /K50 /K68/K6F/K6E/K65/K3A /K34/K32/K31 /K33/K33 /K37/K39 /K30 /K32/K39/K31/K30 /K4A /K61/K70/K61/K6E /K43/K75/K73/K74/K6F/K6D/K65/K72 /K46/K6F/K63/K75/K73 /K43/K65/K6E/K74/K65/K72 /K50 /K68/K6F/K6E/K65/K3A /K38/K31/K2D/K33 /K2D /K35/K37/K37/K33 /K2D/K33/K38 /K35/K30 /K4F/K4E /K53/K65/K6D/K69/K63/K6F/K6E/K64/K75/K63/K74/K6F/K72 /K57/K65/K62/K73/K69/K74/K65 /K3A www.onsemi.com /K4F/K72/K64/K65/K72 /K4C/K69/K74/K65/K72/K61/K74/K75/K72/K65 /K3A/K68 /K74/K74 /K70/K3A /K2F/K2F /K77/K77/K77 /K2E/K6F /K6E/K73/K65/K6D/K69/K2E/K63/K6F/K6D/K2F/K6F/K72/K64/K65/K72/K6C/K69/K74 /K46/K6F/K72 /K61/K64/K64/K69/K74/K69/K6F /K6E/K61/K6C /K69/K6E/K66/K6F/K72/K6D/K61/K74/K69/K6F/K6E/K2C /K70/K6C/K65/K61/K73/K65 /K63/K6F/K6E/K74/K61/K63/K74 /K79/K6F/K75/K72 /K6C/K6F/K63/K61/K6C /K53/K61/K6C/K65/K73 /K52/K65/K70/K72/K65/K73/K65/K6E/K74/K61/K74/K69/K76/K65 /K50/K55/K42/K4C/K49/K43/K41 /K54 /K49/K4F/K4E /K4F/K52/K44/K45/K52/K49/K4E/K47 /K49/K4E/K46 /K4F/K52/K4D/K41 /K54/K49/K4F/K4E ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s technical experts. SCILLC shall not be held liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affi rmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.