SCH2408 ONSEMI | Alldatasheet
Document overview
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Technical content
Features
- 1.5V drive.
- Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D 0.35 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 1.4 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 30 V Zero-Gate Voltage Drain Current I DSS VDS =30V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =100µA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =200mA 360 600 mS R DS (on)1 I D =200mA, VGS =4V 0.75 1.0 Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =100mA, VGS =2.5V 0.9 1.3 Ω R DS (on)3 I D =10mA, VGS =1.5V 1.8 3.6 Ω Input Capacitance Ciss V DS =10V, f=1MHz 28 pF Output Capacitance Coss V DS =10V, f=1MHz 6.0 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 3.1 pF Marking : LH Continued on next page. SCH2408 N-Channel Silicon MOSFET General-Purpose Switching Device
Applications
© 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Publication Order Number: SCH2408/D
Rev.0 I Page 2 of 4 I www.onsemi.com Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Turn-ON Delay Time t d(on) See specified Test Circuit. 17.5 ns Rise Time t r See specified Test Circuit. 34.2 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 104 ns Fall Time t f See specified Test Circuit. 55.5 ns Total Gate Charge Qg V DS =10V, VGS =4V, ID =350mA 0.87 nC Gate-to-Source Charge Qgs V DS =10V, VGS =4V, ID =350mA 0.39 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =4V, ID =350mA 0.14 nC Diode Forward Voltage V SD IS=350mA, VGS =0V 0.86 1.2 V Package Dimensions Electrical Connection unit : mm (typ) 7028-006 Switching Time Test Circuit 1.6 1.6 1.50.05 0.5 0.05 0.560.25 0.2 0.2 1 32 64 5 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : SCH6 PW=10 µs D.C.≤1% P.G 50Ω G S D ID =200mA R L=75Ω VDD =15V VOUT SCH2408 VIN VIN R g R g=1.2kΩ 654 123 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view
Rev.0 I Page 3 of 4 I www.onsemi.com ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS R DS (on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Ambient Temperature, Ta -- °C Drain Current, ID -- mA IT11711 IT11712 IT11709 IT11710 1.0 0.50 150 100 350 300 250 200 8.0V 6.0V 5.0V 4.0V 2.5V 2.0V 100 200 180 160 140 120 1.0 1.5 2.0 2.5 --25 Ta= V DS =10V 2345678 1.5 2.5 3.0 3.5 0.5 2.0 4.0 1.0 1.5 2.5 3.0 0.5 2.0 Ta=25°C 10mA 100mA ID =200mA --40--60 --20 0 20 4 06 08 0 100 120 160140 V GS =2.5V , ID =100mA V GS =1.5V , ID =10mA V GS =4.0V , ID =200mA V GS =1.5V SW Time -- ID Ciss, Coss, Crss -- VDS yfs -- ID Drain Current, ID -- mA Switching Time, SW Time -- ns Drain Current, ID -- mA Forward Transfer Admittance, yfs -- mS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF IS -- VSD Diode Forward V oltage, VSD -- V Source Current, IS -- mA 03 0 10 15 20 255 IT11716 10 100 100023 5 72 3 5 7 1.0 100 IT11715 IT11714IT11713 1.0 100 1023 5 7 10022 35 7 35 7 1000 1000 1.0 100 1000 tf tr Crss Coss Ciss V DS =10V Ta= --25°C 75°C 25°C 100 V GS =0V f=1MHz --25 Ta= td(off) td(on) V DS =15V V GS =4V
Rev.0 I Page 4 of 4 I www.onsemi.com VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT11717 V DS =10V ID =350mA IT13628 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 20 40 0.2 0.4 0.6 0.8 60 80 100 120 140 160 When mounted on ceramic substrate (900mm 2✕0.8mm) 1unit IT13629 0.1 1.0 1023 5 723 5 7 23 5 0.1 0.001 0.01 1.0 100msDC operation (Ta=25 °C) 10ms IDP =1.4A ID =0.35A 1ms Operation in this area is limited by RDS (on). 100µs PW ≤10µs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit SCH2408/D /K4C/K49/K54/K45/K52 /K41 /K54/K55/K52/K45 /K46/K55/K4C/K46/K49/K4C/K4C/K4D/K45/K4E/K54 /K3A /K4C/K69/K74/K65/K72/K61/K74/K75/K72/K65 /K44/K69/K73/K74/K72/K69/K62/K75/K74/K69/K6F/K6E /K43/K65/K6E/K74/K65/K72 /K66/K6F/K72 /K4F/K4E /K53/K65/K6D/K69/K63/K6F/K6E/K64/K75/K63/K74/K6F/K72 /K50/K2E /K4F /K2E /K42 /K6F /K78 /K35 /K31 /K36 /K33 /K2C /K44/K65/K6E/K76/K65/K72 /K2C /K43/K6F/K6C/K6F/K72/K61/K64/K6F /K38/K30/K32/K31 /K37 /K55/K53/K41 /K50/K68/K6F/K6E/K65 /K3A/K33 /K30/K33 /K2D /K36/K37/K35 /K2D/K32/K31 /K37/K35 /K6F/K72 /K38/K30/K30 /K2D/K33/K34/K34 /K2D/K33/K38/K36/K30 /K54 /K6F/K6C/K6C /K46 /K72/K65/K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61 /K46/K61 /K78/K3A /K33/K30/K33 /K2D /K36/K37/K35 /K2D/K32/K31 /K37/K36 /K6F/K72 /K38/K30/K30 /K2D/K33/K34/K34 /K2D/K33/K38/K36/K37 /K54 /K6F/K6C/K6C /K46 /K72/K65/K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61 /K45/K6D/K61/K69/K6C /K3A /K6F/K72/K64/K65/K72/K6C/K69/K74/K40/K6F/K6E/K73/K65/K6D/K69/K2E/K63/K6F/K6D /K4E/K2E /K41/K6D/K65/K72/K69/K63/K61/K6E /K54 /K65/K63/K68/K6E/K69/K63/K61/K6C /K53/K75/K70/K70/K6F/K72 /K74 /K3A/K38/K30 /K30 /K2D /K32 /K38/K32 /K2D /K39 /K38/K35 /K35/K54 /K6F /K6C /K6C/K46 /K72 /K65 /K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61/K2E /K45/K75/K72/K6F/K70/K65/K2C /K4D/K69/K64/K64/K6C /K65/K45 /K61 /K73 /K74/K61 /K6E /K64/K41 /K66 /K72 /K69 /K63 /K61/K54 /K65 /K63 /K68 /K6E /K69 /K63 /K61 /K6C/K53 /K75 /K70 /K70 /K6F /K72 /K74 /K3A /K50 /K68/K6F/K6E/K65/K3A /K34/K32/K31 /K33/K33 /K37/K39 /K30 /K32/K39/K31/K30 /K4A /K61/K70/K61/K6E /K43/K75/K73/K74/K6F/K6D/K65/K72 /K46/K6F/K63/K75/K73 /K43/K65/K6E/K74/K65/K72 /K50 /K68/K6F/K6E/K65/K3A /K38/K31/K2D/K33 /K2D /K35/K37/K37/K33 /K2D/K33/K38 /K35/K30 /K4F/K4E /K53/K65/K6D/K69/K63/K6F/K6E/K64/K75/K63/K74/K6F/K72 /K57/K65/K62/K73/K69/K74/K65 /K3A www.onsemi.com /K4F/K72/K64/K65/K72 /K4C/K69/K74/K65/K72/K61/K74/K75/K72/K65 /K3A/K68 /K74/K74 /K70/K3A /K2F/K2F /K77/K77/K77 /K2E/K6F /K6E/K73/K65/K6D/K69/K2E/K63/K6F/K6D/K2F/K6F/K72/K64/K65/K72/K6C/K69/K74 /K46/K6F/K72 /K61/K64/K64/K69/K74/K69/K6F /K6E/K61/K6C /K69/K6E/K66/K6F/K72/K6D/K61/K74/K69/K6F/K6E/K2C /K70/K6C/K65/K61/K73/K65 /K63/K6F/K6E/K74/K61/K63/K74 /K79/K6F/K75/K72 /K6C/K6F/K63/K61/K6C /K53/K61/K6C/K65/K73 /K52/K65/K70/K72/K65/K73/K65/K6E/K74/K61/K74/K69/K76/K65 /K50/K55/K42/K4C/K49/K43/K41 /K54 /K49/K4F/K4E /K4F/K52/K44/K45/K52/K49/K4E/K47 /K49/K4E/K46 /K4F/K52/K4D/K41 /K54/K49/K4F/K4E ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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