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Low On-Resistance 4V drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt) Typical Applications Load Switch Battery Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V Gate to Source Voltage V GSS 20 V Drain Current (DC) I D 3.5 A Drain Current (Pulse) PW 10s, duty cycle 1% IDP 14 A Power Dissipation When mounted on ceramic substrate (900mm 0.8mm) PD 1 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are ex ceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Ambient RJA 125 C/W When mounted on ceramic substrate (900mm 0.8mm) Power MOSFET 30V, 72mΩ, 3.5A, Single N-Channel VDSS R DS(on) Max I D Max 30V 72mΩ@ 10V 3.5A 110mΩ@ 4.5V 128mΩ@ 4V ELECTRICAL CONNECTION N-Channel PACKING TYPE : TL MARKING
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet. TL 1,2,5,6 1:Drain 2:Drain 3:Gate 4:Source 5:Drain 6:Drain ZQ LOT No. LOT No.
www.onsemi.com ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Parameter Symbol Conditions Value Unit min typ max Drain to Source Breakdown Voltage V( BR)DSS I D=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS V DS=30V, VGS=0V 1 A Gate to Source Leakage Current I GSS V GS=16V, VDS=0V 10 A Gate Threshold Voltage V GS(th) V DS=10V, ID=1mA 1.2 2.6 V Forward Transconductance g FS V DS=10V, ID=1.5A 1.8 S Static Drain to Source On-State Resistance RDS(on)1 I D=1.5A, VGS=10V 55 72 m RDS(on)2 I D=1A, VGS=4.5V 78 110 m RDS(on)3 I D=1A, VGS=4V 91 128 m Input Capacitance Ciss VDS=10V, f=1MHz 280 pF Output Capacitance Coss 60 pF Reverse Transfer Capacitance Crss 30 pF Turn-ON Delay Time td(on) See specified Test Circuit 5.8 ns Rise Time tr 8.0 ns Turn-OFF Delay Time td(off) 21 ns Fall Time tf 9.7 ns Total Gate Charge Qg VDS=15V, VGS=10V, ID=3.5A 5.6 nC Gate to Source Charge Qgs 1.2 nC Gate to Drain “Miller” Charge Qgd 0.8 nC Forward Diode Voltage VSD IS=3.5A, VGS=0V 0.84 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit PW=10s D.C.≤1% P.G 50 G S D ID=1.5A RL=10 VDD=15V VOUT SCH1439 VIN 10V VIN
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www.onsemi.com ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A lis ting of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended tosupport or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject t oa l l applicable copyright laws and is not for resale in any manner. SOT-563 / SCH6 CASE 463AB ISSUE O PACKAGE DIMENSIONS unit : mm Device Marking Package Shipping (Qty / Packing) SCH1439-TL-H ZQ SOT-563 / SCH6 (Pb-Free / Halogen Free) 5,000 / Tape & Reel SCH1439-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the SCH1439 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Recommended Soldering Footprint 0.4 0.3 0.5 0.5 1.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain