SCH1406 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • L ow ON-resistance.
  • Ultrahigh-speed switching.
  • 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 20 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D 1.7 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 4.8 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm2✕0.8mm) 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 20 V Zero-Gate Voltage Drain Current I DSS VDS =20V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =1A 1.9 2.8 S R DS (on)1 I D =1A, VGS =4V 160 210 m Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =0.5A, VGS =2.5V 200 280 m Ω R DS (on)3 I D =0.1A, VGS =1.8V 280 390 m Ω Marking : KF Continued on next page. N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

© 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Publication Order Number: SCH1406/D

Rev.0 I Page 2 of 4 I www.onsemi.com Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS =10V, f=1MHz 100 pF Output Capacitance Coss V DS =10V, f=1MHz 22 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 15 pF Turn-ON Delay Time t d(on) See specified Test Circuit 5.5 ns Rise Time t r See specified Test Circuit 18 ns Turn-OFF Delay Time t d(off) See specified Test Circuit 17 ns Fall Time t f See specified Test Circuit 8 ns Total Gate Charge Qg V DS =10V, VGS =10V, ID =1.2A 4.5 nC Gate-to-Source Charge Qgs V DS =10V, VGS =10V, ID =1.2A 0.4 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =10V, ID =1.2A 0.4 nC Diode Forward Voltage V SD IS=- -1.2A, VGS =0V 0.9 1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7028-002 1.6 1.6 1.50.05 0.5 0.05 0.560.25 0.2 0.2 1 32 64 5 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.4 0.8 1.6 2.0 0.2 1.2 ID -- VDS V GS =1.0V 1.5V 2.5V IT02983 ID -- VGS V DS =10V 25°C --25 Ta=75 Ta= --25 IT02984 3.0V 4.0V 6.0V 10.0V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A PW=10 µs D.C.≤1% P. G 50Ω G S D ID =1A R L=10Ω VDD =10V VOUT SCH1406 VIN VIN

Rev.0 I Page 3 of 4 I www.onsemi.com IT07148 012345 VGS -- Qg V DS =10V ID =1.2A IT07147 100 SW Time -- ID V DD =10V V GS =4V td(on) td(off) tr tf IT02989 IT02987 0.01 0.123 5 70.001 23 5 7 1.023 5 7 3 2 0.1 1.0 23 5 7 23 5 0.01 0.1 1.0 yfs -- ID V DS =10V 75°CTa= --25 02468 1 0 1 2 1 41 61 82 0 100 Ciss, Coss, Crss -- VDS f=1MHz Ciss Coss Crss IT02990 IT02988 0.01 0.1 1.0 IS -- VSD V GS =0V --25 Ta=75 A S O 1.0 0.1 0.01 0.1 1.00.01 23 5 723 5 723 5 7 10 23 IDP =4.8A ID =1.7A Operation in this area is limited by RDS (on). 100 µs 100msDC operation (Ta=25 °C) 1ms 10ms PW ≤10µs 25°C Forward Transfer Admittance, yfs -- S Source Current, IS -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ta=25°C Single pulse Mounted on a ceramic board (900mm 2✕0.8mm) Drain Current, ID -- A Diode Forward V oltage, VSD -- V --60 - -40 - -20 0 20 40 60 80 100 120 140 160 R DS (on) -- Ta IT02986 100 150 200 250 300 350 ID=1.0A, V GS=4.0V ID=0.5A, V GS=2.5V 02468 1 0 R DS (on) -- VGS IT02985 100 150 200 250 300 350 400 Ta=25°C ID =0.5A 1.0A Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C

Rev.0 I Page 4 of 4 I www.onsemi.com IT07149 20 40 0.2 0.4 0.6 0.8 1.0 60 80 100 120 140 160 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Mounted on a ceramic board (900mm 2✕0.8mm) SCH1406/D /K4C/K49/K54/K45/K52 /K41 /K54/K55/K52/K45 /K46/K55/K4C/K46/K49/K4C/K4C/K4D/K45/K4E/K54 /K3A /K4C/K69/K74/K65/K72/K61/K74/K75/K72/K65 /K44/K69/K73/K74/K72/K69/K62/K75/K74/K69/K6F/K6E /K43/K65/K6E/K74/K65/K72 /K66/K6F/K72 /K4F/K4E /K53/K65/K6D/K69/K63/K6F/K6E/K64/K75/K63/K74/K6F/K72 /K50/K2E /K4F /K2E /K42 /K6F /K78 /K35 /K31 /K36 /K33 /K2C /K44/K65/K6E/K76/K65/K72 /K2C /K43/K6F/K6C/K6F/K72/K61/K64/K6F /K38/K30/K32/K31 /K37 /K55/K53/K41 /K50/K68/K6F/K6E/K65 /K3A/K33 /K30/K33 /K2D /K36/K37/K35 /K2D/K32/K31 /K37/K35 /K6F/K72 /K38/K30/K30 /K2D/K33/K34/K34 /K2D/K33/K38/K36/K30 /K54 /K6F/K6C/K6C /K46 /K72/K65/K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61 /K46/K61 /K78/K3A /K33/K30/K33 /K2D /K36/K37/K35 /K2D/K32/K31 /K37/K36 /K6F/K72 /K38/K30/K30 /K2D/K33/K34/K34 /K2D/K33/K38/K36/K37 /K54 /K6F/K6C/K6C /K46 /K72/K65/K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61 /K45/K6D/K61/K69/K6C /K3A /K6F/K72/K64/K65/K72/K6C/K69/K74/K40/K6F/K6E/K73/K65/K6D/K69/K2E/K63/K6F/K6D /K4E/K2E /K41/K6D/K65/K72/K69/K63/K61/K6E /K54 /K65/K63/K68/K6E/K69/K63/K61/K6C /K53/K75/K70/K70/K6F/K72 /K74 /K3A/K38/K30 /K30 /K2D /K32 /K38/K32 /K2D /K39 /K38/K35 /K35/K54 /K6F /K6C /K6C/K46 /K72 /K65 /K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61/K2E /K45/K75/K72/K6F/K70/K65/K2C /K4D/K69/K64/K64/K6C /K65/K45 /K61 /K73 /K74/K61 /K6E /K64/K41 /K66 /K72 /K69 /K63 /K61/K54 /K65 /K63 /K68 /K6E /K69 /K63 /K61 /K6C/K53 /K75 /K70 /K70 /K6F /K72 /K74 /K3A /K50 /K68/K6F/K6E/K65/K3A /K34/K32/K31 /K33/K33 /K37/K39 /K30 /K32/K39/K31/K30 /K4A /K61/K70/K61/K6E /K43/K75/K73/K74/K6F/K6D/K65/K72 /K46/K6F/K63/K75/K73 /K43/K65/K6E/K74/K65/K72 /K50 /K68/K6F/K6E/K65/K3A /K38/K31/K2D/K33 /K2D /K35/K37/K37/K33 /K2D/K33/K38 /K35/K30 /K4F/K4E /K53/K65/K6D/K69/K63/K6F/K6E/K64/K75/K63/K74/K6F/K72 /K57/K65/K62/K73/K69/K74/K65 /K3A www.onsemi.com /K4F/K72/K64/K65/K72 /K4C/K69/K74/K65/K72/K61/K74/K75/K72/K65 /K3A/K68 /K74/K74 /K70/K3A /K2F/K2F /K77/K77/K77 /K2E/K6F /K6E/K73/K65/K6D/K69/K2E/K63/K6F/K6D/K2F/K6F/K72/K64/K65/K72/K6C/K69/K74 /K46/K6F/K72 /K61/K64/K64/K69/K74/K69/K6F /K6E/K61/K6C /K69/K6E/K66/K6F/K72/K6D/K61/K74/K69/K6F/K6E/K2C /K70/K6C/K65/K61/K73/K65 /K63/K6F/K6E/K74/K61/K63/K74 /K79/K6F/K75/K72 /K6C/K6F/K63/K61/K6C /K53/K61/K6C/K65/K73 /K52/K65/K70/K72/K65/K73/K65/K6E/K74/K61/K74/K69/K76/K65 /K50/K55/K42/K4C/K49/K43/K41 /K54 /K49/K4F/K4E /K4F/K52/K44/K45/K52/K49/K4E/K47 /K49/K4E/K46 /K4F/K52/K4D/K41 /K54/K49/K4F/K4E ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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