SCG4153

SCG4153 SECOS | Alldatasheet

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Technical content

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SCG4153 0.8A , 20V , R DS(ON) 310 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET 12-Mar-2013 Rev. A Page 1 of 4 N3 /boxopen/boxopen /boxopen/boxopen /boxopen/boxopen /boxopen/boxopen = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA /circle6 Trench Technology /circle6 Supper high density cell design /circle6 Excellent ON resistance /circle6 Extremely Low Threshold Voltage APPLICATION /circle6 DC-DC converter circuit /circle6 Load Switch MARKING

PACKAGE INFORMATION

(T A = 25° C unless otherwise specified) Rating Parameter Symbol 10S Steady State Unit Drain – Source Voltage VDS 20 V Gate – Source Voltage VGS ±6 V TA= 25° C 0.88 0.8 Continuous Drain Current 1 TA= 70° C ID 0.71 0.64 A TA= 25° C 0.37 0.3 Power Dissipation 1 TA= 70° C PD 0.23 0.19 W TA= 25° C 0.76 0.69 Continuous Drain Current 2 TA= 70° C ID 0.6 0.55 A TA= 25° C 0.27 0.22 Power Dissipation 2 TA= 70° C PD 0.17 0.14 W Pulsed Drain Current 3 IDM 1.4 A Lead Temperature TL 260 ° C Operating Junction & Storage Temperature Range T J, T STG 150, -55~150 ° C SOT-523 Top View A L M C B D G H JF K E 1 2 A 1.5 1.7 G - 0.1 B 1.45 1.75 H 0.55 REF. C 0.7 0.9 J 0.1 0.2 D 0.7 0.9 K - E 0.9 1.1 L 0.5 TYP. F 0.15 0.35 M 0.25 0.325 Top View

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SCG4153 0.8A , 20V , R DS(ON) 310 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET 12-Mar-2013 Rev. A Page 2 of 4 THERMAL RESISTANCE RATINGS Note: 1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper. 2. Surface mounted on FR4 board using minimum pad size, 1oz copper 3. Repetitive rating, pulse width limited by junction temperature, tp=10 µs, Duty Cycle=1% 4. Repetitive rating, pulse width limited by junction temperature T J=150° C. ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V (BR)DSS 20 - - V V GS =0, I D =250 µA Zero Gate Voltage Drain Current I DSS - - 1 µA V DS =16V, V GS =0 Gate-Source Leakage I GSS - - ±5 µA V DS =0 , V GS = ±5V Gate-Threshold Voltage V GS(TH) 0.45 0.55 1 V V DS =V GS, ID =250 µA - 220 310 V GS =4.5V, I D =0.55A - 260 360 V GS =2.5V, I D =0.45A Drain-Source On Resistance R DS(ON) - 320 460 m Ω VGS =1.8V, I D =0.35A Forward Transconductance g FS - 1 - S V DS =10V, ID =0.4A Body-Drain Diode Ratings Diode Forward On–Voltage V SD 0.5 0.7 1.5 V I S=350mA, V GS =0 Dynamic Characteristics Input Capacitance C ISS - 68 - Output Capacitance C OSS - 9 - Reverse Transfer Capacitance C RSS - 7.5 - pF VDS =10V, VGS =0, f=100KHz Total Gate Charge Q G(TOT) - 1.15 - Threshold Gate Charge Q G(TH) - 0.06 - Gate-to-Source Charge Q GS - 0.15 - Gate-to-Drain Charge Q GD - 0.23 - nC VDS =10V, VGS =4.5V, ID =0.55A Turn-on Delay Time T d(ON) - 22 - Rise Time T r - 80 - Turn-off Delay Time T d(OFF) - 700 - Fall Time Tf - 380 - nS VDD =10V, I D =0.55A, VGS =4.5V, R G =6Ω. Rating Parameter Symbol Typ. Max. Unit T≦10S 285 335 Junction-to-Ambient Thermal Resistance 1 Steady State R θJA 340 405 T≦10S 385 450 Junction-to-Ambient Thermal Resistance 2 Steady State R θJA 455 545 Junction-to-Case Thermal Resistance Steady State R θJC 260 300 ° C / W

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SCG4153 0.8A , 20V , R DS(ON) 310 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET 12-Mar-2013 Rev. A Page 3 of 4 CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SCG4153 0.8A , 20V , R DS(ON) 310 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET 12-Mar-2013 Rev. A Page 4 of 4 CHARACTERISTIC CURVES