SCG3134K SECOS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

0.75A, 20V, R DS(O/glyph1197) 380mΩ /glyph1197-Channel Plastic-Enhancement MOSFET 23-Apr-2018 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOT -523 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

/circle6 High-Side Switching /circle6 Low On-Resistance /circle6 Low Threshold /circle6 Fast Switching Speed APPLICATION /circle6 Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories /circle6 Battery Operated Systems /circle6 Power Supply Converter Circuits /circle6 Load/Power Switching Cell Phones, Pagers MARKING

PACKAGE INFORMATION

(T A=25°C unless otherwise specified) Parameters Symbol Ratings Unit Drain-Source Voltage VDSS 20 V Typical Gate-Source Voltage V GS ±12 V Drain Current-Continuous ID 0.75 A Drain Current-Pulsed 1 IDM 3 A Power Dissipation 2 PD 150 mW Thermal Resistance from Junction-Ambient RθJA 833 °C/W Operating Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C 34K Part Number Type SCG3134K Lead (Pb)-free SCG3134K-C Lead (Pb)-free and Halogen-free Top View A L M C B D G H JF K E 1 2 A 1.5 1.7 G - 0.1 B 1.45 1.75 H 0.55 REF. C 0.7 0.9 J 0.1 0.2 D 0.7 0.9 K - E 0.9 1.1 L 0.5 TYP. F 0.15 0.35 M 0.25 0.35

0.75A, 20V, R DS(O/glyph1197) 380mΩ /glyph1197-Channel Plastic-Enhancement MOSFET 23-Apr-2018 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage V(BR)DSS 20 - - V V GS =0, I D=250µA Gate-Threshold Voltage 3 V GS(th) 0.35 - 1.1 V V DS =VGS , I D=250µA Gate-Body Leakage Current I GSS - - ±20 µA V DS =0, VGS = ±10V Zero Gate Voltage Drain Current IDSS - - 1 µA V DS =20V, VGS =0 - - 380 V GS =4.5V, I D=650mA - - 450 V GS =2.5V, I D=550mA Drain-Source On-State Resistance 3 R DS(ON) - - 800 mΩ VGS =1.8V, I D=450mA Forward Transconductance g fs 1 - - S V DS =10V, ID=800mA Turn-on Delay Time T d(on) - 6.7 - Rise Time T r - 4.8 - Turn-off Delay Time T d(off) - 17.3 - Fall Time T f - 7.4 - nS VDD =10V ID=500mA VGS=4.5V RG =10Ω Input Capacitance C iss - 120 - Output Capacitance C oss - 20 - Reverse Transfer Capacitance Crss - 15 - pF VDS =16V VGS =0 f=1MHz Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage 3 V SD - - 1.2 V I S=0.15A, V GS=0 Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. This test is performed with no heat sink at T A=25°C. 3. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦0.5%.

0.75A, 20V, R DS(O/glyph1197) 380mΩ /glyph1197-Channel Plastic-Enhancement MOSFET 23-Apr-2018 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE