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N-Channel Enhancement MOSFET Elektronische Bauelemente 04-May-2010 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOT-523 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Low on-resistance. Fast switching speed. Low voltage drive makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel. EQUIVALENT CIRCUIT MAXIMUM RATINGS (TA=25℃ unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage V GSS ±20 V Continuous Drain Current ID 0.1 A Total Power Dissipation P D 0.15 W Operating Junction Temperature Range T J 150 °C Operating Storage Temperature Range TSTG -55~150 °C Thermal Resistance, Junction to Ambient R θJA 833 °C / W DEVICE MARKING KN REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.50 1.70 K 0.30 0.50 B 0.75 0.95 M --- 10 o C 0.60 0.80 N --- 10 o D 0.23 0.33 S 1.50 1.70 G 0.50BSC J 0.10 0.20
N-Channel Enhancement MOSFET Elektronische Bauelemente 04-May-2010 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) CHARACTERISTICS SYMBOL MIN TYP MA X UNIT TEST CONDITIONS Off Characteristics Drain-Source Breakdown Voltage BV DSS 30 - - V V GS = 0V, ID = 10μA Zero Gate Voltage Drain Current I DSS - - 1 μA V DS = 30V, VGS = 0V Gate-Source Leakage I GSS - - ±1 μA V GS= ±20V, VDS=0V Gate Threshold Voltage V GS(th) 0.8 - 1.5 V V DS= 3V, ID=100μA Static Drain-Source On Resistance R DS(ON) - - 8 Ω VGS= 4V, ID = 10mA - - 13 V GS= 2.5V, ID = 1mA Forward transfer admittance gfs 20 - - mS V DS= 3V, ID = 10mA Dynamic Characteristics Input Capacitance C iss - 13 - pF V DS= 5V, VGS= 0V, f= 1MHz Output Capacitance C oss - 9 - Reverse Transfer Capacitance C rss - 4 - Switching Characteristics Turn-On Delay Time T d(ON) - 15 - nS VGS= 5V, VDD= 5V, ID= 10mA, RG= 10Ω, RL= 500Ω Rise Time T r - 35 - Turn-Off Delay Time T d(OFF) - 80 - Fall Time T f - 80 -
N-Channel Enhancement MOSFET Elektronische Bauelemente 04-May-2010 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE
N-Channel Enhancement MOSFET Elektronische Bauelemente 04-May-2010 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE