SCG2019

SCG2019 SECOS | Alldatasheet

Document overview

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Technical content

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SCG2019 -0.62A , -20V , R DS(ON) 810 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 12-Mar-2013 Rev. A Page 1 of 4 P9 /boxopen/boxopen /boxopen/boxopen /UIrecord/UIrecord /UIrecord/UIrecord /boxopen/boxopen /boxopen/boxopen = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA /circle6 Trench Technology /circle6 Supper high density cell design /circle6 Excellent ON resistance /circle6 Extremely Low Threshold Voltage APPLICATION /circle6 DC-DC converter circuit /circle6 Load Switch MARKING

PACKAGE INFORMATION

(T A = 25° C unless otherwise specified) Rating Parameter Symbol 10S Steady State Unit Drain – Source Voltage VDS -20 V Gate – Source Voltage VGS ±5 V TA= 25° C -0.73 -0.62 Continuous Drain Current 1 TA= 70° C ID -0.58 -0.5 A TA= 25° C 0.38 0.28 Power Dissipation 1 TA= 70° C PD 0.24 0.18 W TA= 25° C -0.61 -0.55 Continuous Drain Current 2 TA= 70° C ID -0.49 -0.44 A TA= 25° C 0.27 0.22 Power Dissipation 2 TA= 70° C PD 0.17 0.14 W Pulsed Drain Current 3 IDM -1.2 A Lead Temperature TL 260 ° C Operating Junction & Storage Temperature Range T J, T STG 150, -55~150 ° C SOT-523 Top View A L M C B D G H JF K E 1 2 A 1.5 1.7 G - 0.1 B 1.45 1.75 H 0.55 REF. C 0.7 0.9 J 0.1 0.2 D 0.7 0.9 K - E 0.9 1.1 L 0.5 TYP. F 0.15 0.35 M 0.25 0.325 Top View

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SCG2019 -0.62A , -20V , R DS(ON) 810 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 12-Mar-2013 Rev. A Page 2 of 4 THERMAL RESISTANCE RATINGS Note: 1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper. 2. Surface mounted on FR4 board using minimum pad size, 1oz copper 3. Repetitive rating, pulse width limited by junction temperature, tp=10 µs, Duty Cycle=1% 4. Repetitive rating, pulse width limited by junction temperature T J=150° C. ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V (BR)DSS -20 - - V V GS =0, I D = -250 µA Zero Gate Voltage Drain Current I DSS - - -1 µA V DS = -16V, V GS =0 Gate-Source Leakage I GSS - - ±5 µA V DS =0 , V GS = ±5V Gate-Threshold Voltage V GS(TH) -0.4 -0.65 -0.9 V V DS =V GS, ID = -250 µA - 480 810 V GS = -4.5V, I D = -0.45A - 620 1050 V GS = -2.5V, I D = -0.35A Drain-Source On Resistance R DS(ON) - 780 1300 m Ω VGS = -1.8V, I D = -0.25A Forward Transconductance g FS - 1.25 - S V DS = -5V, ID = -0.45A Body-Drain Diode Ratings Diode Forward On–Voltage V SD -0.5 -0.65 -1.5 V I S= -150mA, V GS =0 Dynamic Characteristics Input Capacitance C ISS - 74.5 - Output Capacitance C OSS - 10.8 - Reverse Transfer Capacitance C RSS - 10.2 - pF VDS = -10V, VGS =0, f=100KHz Total Gate Charge Q G(TOT) - 1.8 - Threshold Gate Charge Q G(TH) - 0.12 - Gate-to-Source Charge Q GS - 0.18 - Gate-to-Drain Charge Q GD - 0.74 - nC VDS = -10V, VGS = -4.5V, ID = -0.45A Turn-on Delay Time T d(ON) - 45 - Rise Time T r - 140 - Turn-off Delay Time T d(OFF) - 1500 - Fall Time Tf - 2100 - nS VDD = -10V, I D = -0.45A, VGS = -4.5V, R G =6Ω. Rating Parameter Symbol Typ. Max. Unit T≦10S 285 325 Junction-to-Ambient Thermal Resistance 1 Steady State R θJA 355 440 T≦10S 395 460 Junction-to-Ambient Thermal Resistance 2 Steady State R θJA 465 560 Junction-to-Case Thermal Resistance Steady State R θJC 280 320 ° C / W

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SCG2019 -0.62A , -20V , R DS(ON) 810 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 12-Mar-2013 Rev. A Page 3 of 4 CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SCG2019 -0.62A , -20V , R DS(ON) 810 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 12-Mar-2013 Rev. A Page 4 of 4 CHARACTERISTIC CURVES