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JI JIEJIE MICROELECTRONICS CO.,Ltd SCF25C60 Series 25A SCRs DESCRIPTION: High current density due to double mesa technology. SCF25C60 series of silicon controlled rectifiers are TO-220F specifically designed for medium power switching ey and phase control applications. SCF25C60 series are suitable for general purpose applications, a high gate sensitivity is required. SCF25C60 are full pack plastic package,they Vs provides a 2500V RMS isolation voltage from all three terminals to extemal heetsink. K(1) MAIN FEATURES &{3) ABSOLUTE MAXIMUM RATINGS Parameter Symbol] Value Storage junction temperature range -40 to +150 Operrating junction temperature range -40 to +125 Repetitive Peak Off-state Voltage Tj=25°C | eo | Repetitive Peak Reverse Voltage Tj=25°C | verm | 600 | RMS on-state current (all conduction angels) | TO-220F Tc=69°C Average on-state current (half sine wave) TO-220F Tc=69°C Non repetitive surge peak on-state current |f=50HzZ t=10ms Itsm A (half sine cycle, Tj=25°C) f=60Hz t=8.3ms Ft Value for fusing tp=8.3ms Repetitive rate of rise of on-state current after triggering ITM=20A IG=50mA_dlo/dt 50mA/ms dria 50 | Aus Peak gate current tp=20us, Tj=125°C Peak gate power tp=20us, Tj=125°C Average gate power dissipation Tj=125°C TEL: +86-513-83639777 -1/4- http: //WWW.JIEJIE-CN.COM
SCF25C60 Series Jd JieJie Microelectronics CO.,Ltd ELECTRICAL CHARACTERISTICS(Tj=25°C unless otherwise specified) _ SCF25C60 , Symbol Test Condition MIN. | TP. | MAX. | Unit VbD=12V_ RL=330 | = Pp for fast v_| [veo [Worvoweasaconease | | (poz | vy Ce [avi [vo=srvvorn gate open Tistase | soo | - | - | vis | STATIC CHARACTERISTICS Syme vane) I DRM - _ IRRM VD=VDRM VR=VRRM Tj=125°C 0.5 mA THERMAL RESISTANCES . thermal resistance from junction to heatsink e TEL: 0513-83639777 -2/4- http: //WWW.JIEJIE-CN.COM
SCF25C60 Series JJ JieJie Microelectronics Co.,Ltd PACKAGE MECHANICAL DATA TO-220F Ref. SVL i2 PS (e Toat To: 0.252) fo0.268 | es es XA grok RS [ary fees forest St [t2 |ria[ [47 [o.oaal [0.067 [us| asl] orsol Lvr [tao a0" | TEL: 0513-83639777 -3/4- http: //WWW.JIEJIE-CN.COM
SCF25C60 Series sd JieJie Microelectronics CO.,Ltd FIG.1: Maximum power dissipation versus FIG.2: RMS on-state current versus case average on-state current(half cycle) temperature(full cycle) PW) Irypmsy(A) sO A i a a ee a =e " a ee Aa a eM a a eee a tA a co oe a A a OS oa a sr NG ioc en cL eo PN FIG.3: On-state characteristics (maximum FIG.4: Surge peak on-state current versus values) number of cycles. trm(A) Irsm(A) Ee : om icrSannEEe seen SS =SSanna>22======== ees ees ee yi eS A eet oe See 42 a
7 OeCCeeee = FR ease HH
LiL = 2 [Saes/ i aes eeeeeeee [EHS a a 20 meee ee Ee COC ey PEE See Vrw(v) “TTT numer ofeaes : BaRHEae LTE ETE » EE HE J Namboretevces EEE ETHHTH FIG.5: Non-repetitive surge peak on-state FIG.6: Relative variation of gate trigger current for a sinusoidal pulse with width current, holding current and latching current tp<10ms, and corresponding value of I*t. versus junction temperature(typical values). Insm(A), Pt(A?s) og (STAHAILCTIIGT IL (T}=25°C] CCR = Cr a IN Seer =| RNC SOA 1 Ce CT eT CoS EE EEE EEE 1 2 ~e a A 8 ot] TTT TT TT RE FF i eeiiipims COCCEE ae) LECCE LT TUIN TTT PTET w&LETTTT COPE TEL: 0513-83639777 -4/4- http: //WWW.JIEJIE-CN.COM