SCESD0502L-C SECOS | Alldatasheet
Document overview
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Technical content
60W, 5V Ultra Low Capacitance TVS/ESD Protection Diode 11-Oct-2018 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SCESD0502L-C is an ultra-low capacitance Transient Voltage Suppressor (TVS) designed to provide electrostatic discharge (ESD) protection for high-speed data interfaces. With typical capacitance of 0.2pF (I/O to I/O) only, SCESD0502L-C is designed to protect parasitic-sensitive systems against over-voltage and over-current transient events. It complies with IEC 61000-4-2 (ESD), Level 4 (±15kV air, ±8kV contact discharge), IEC 61000-4-4 (electrical fast transient - EFT) (40A, 5/50 ns), very fast charged device model (CDM) ESD and cable discharge event (CDE), etc. SCESD0502L-C uses small DFN1006-3L package. Each SCESD0502L-C device can protect two high-speed data lines. The combined features of low capacitance, small size and high ESD robustness make SCESD0502L-C ideal for high-speed data port and high-frequency line applications. The low clamping voltage of the SCESD0502L-C guarantees a minimum stress on the protected IC.
FEATURES
/circle6 Low Capacitance /circle6 Low Leakage Current /circle6 Low Clamping Voltage
APPLICATIONS
/circle6 Serial ATA /circle6 Desktops, Servers and Notebooks /circle6 PCI Express /circle6 MDDI Ports /circle6 USB Data Line Protection /circle6 Display Ports /circle6 Digital Visual Interfaces (DVI) MARKING 52L
PACKAGE INFORMATION
SCESD0502L-C Lead (Pb)-free and Halogen-free DFN1006-3L A 0.95 1.05 F 0.45 0.55 B 0.55 0.65 G 0.2 0.3 C 0.46 0.5 H 0.35 TYP. D 0 0.05 J 0.15 TYP. E 0.65 TYP.
60W, 5V Ultra Low Capacitance TVS/ESD Protection Diode 11-Oct-2018 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Peak Pulse Power @tp=8/20µs P PP 60 W Air Discharge IEC 61000-4-2 Contact Discharge VESD ±20 kV Operating Temperature TOPT -55~125 °C Storage Temperature TSTG -55~150 °C
ELECTRICAL CHARACTERISTICS
(T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Reverse Working Voltage V RWM - - 5 V I/O-GND Reverse Breakdown Voltage VBR 6 - - V IT=1mA Between I/O and GND Reverse Leakage Current I R - - 100 nA VRWM =5V Between I/O and GND - - 10 IPP =1A, tp=8/20µs Between I/O and GND Clamping Voltage V C - - 15 V IPP =4A, tp=8/20µs Between I/O and GND Forward Voltage V F - - 1.2 V IT=10mA Between I/O and GND - 0.4 0.6 VR=0, f=1MHz Between I/O and GND Total Capacitance C T - 0.2 0.3 pF VR=0, f=1MHz Between I/O and I/O CHARACTERISTICS CURVES